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    Gas distribution showerhead and method of cleaning
    1.
    发明授权
    Gas distribution showerhead and method of cleaning 有权
    气体分配喷头及清洗方法

    公开(公告)号：US08980379B2

    公开(公告)日：2015-03-17

    申请号：US12870465

    申请日：2010-08-27

    申请人： Hiroji Hanawa ,  Kyawwin Maung ,  Hua Chung

    发明人： Hiroji Hanawa ,  Kyawwin Maung ,  Hua Chung

    IPC分类号： C23C16/00 ,  C23C16/513 ,  B08B7/00 ,  C23C16/44 ,  C23C16/455 ,  H01L21/67

    CPC分类号： C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

    摘要： During a deposition process, material may deposit not only on the substrate, but also on other chamber components. In a MOCVD chamber, one of those components is the gas distribution showerhead. The showerhead may be cleaned by bombarding the showerhead with radicals generated by a plasma that includes an inert gas and chlorine. In order to generate the plasma, the showerhead may be negatively biased or floating relative to the substrate support. The showerhead may comprise stainless steel and be coated with a ceramic coating.

    摘要翻译： 在沉积过程中，材料不仅可以沉积在基底上，而且沉积在其它腔室部件上。 在MOCVD室中，其中一个部件是气体分配喷头。 可以通过用包括惰性气体和氯的等离子体产生的自由基轰击喷头来清洁喷头。 为了产生等离子体，喷头可以相对于基板支撑物被负偏置或浮动。 喷头可以包括不锈钢并涂覆有陶瓷涂层。

    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE
    5.
    发明申请
    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE 审中-公开
    具有高功率表面的气体分配淋浴

    公开(公告)号：US20120052216A1

    公开(公告)日：2012-03-01

    申请号：US13154060

    申请日：2011-06-06

    申请人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    发明人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    IPC分类号： C23C16/48

    CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/481 ,  C23C16/52

    摘要： Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.

    摘要翻译： 本发明的实施例提供了应用于化学气相沉积工艺中使用的处理腔室部件的表面涂层的方法和装置。 在一个实施例中，该装置提供一种喷头装置，其包括主体，延伸穿过主体的多个导管，多个导管中的每一个具有延伸到主体的处理表面的开口，以及设置在处理表面上的涂层， 该涂层为约50微米至约200微米厚，并且包括约0.8的发射率系数，约180微英寸至约220微英寸的平均表面粗糙度，以及约15％或更小的孔隙率。

    Plasma reactor with uniform process rate distribution by improved RF ground return path
    6.
    发明授权
    Plasma reactor with uniform process rate distribution by improved RF ground return path 有权
    等离子体反应器具有均匀的加工速率分布，通过改进的射频接地回路

    公开(公告)号：US08360003B2

    公开(公告)日：2013-01-29

    申请号：US12501966

    申请日：2009-07-13

    申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

    摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

    摘要翻译： 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。