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122 条记录 (耗时 0.022 秒)

    Film forming method, and substrate-processing apparatus
    1.
    发明授权
    Film forming method, and substrate-processing apparatus 失效
    成膜方法和基板处理装置

    公开(公告)号：US07709383B2

    公开(公告)日：2010-05-04

    申请号：US11034926

    申请日：2005-01-14

    申请人： Hirokazu Kato ,  Tomoyuki Takeishi ,  Shinichi Ito

    发明人： Hirokazu Kato ,  Tomoyuki Takeishi ,  Shinichi Ito

    IPC分类号： H01L21/20 ,  H01L21/44

    CPC分类号： H01L21/02282 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0274 ,  H01L21/312

    摘要： A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an atmosphere including moisture under a predetermined condition after the substantial-convergence, the predetermined condition being such that a product of a time for which the coating film is exposed to the atmosphere and a water content per unit volume in an atmosphere in the vicinity of a surface of the coating film is made to be greater than or equal to a predetermined value, and forming a solid thin film on the substrate after the stand-by, the thin film being formed by carrying out an elimination of the solvent in the coating film and heat treatment for generating an irreversible reaction to the coating type thin film forming substance in the coating film.

    摘要翻译： 一种成膜方法，包括在基板上形成液体涂膜，将含有涂膜型薄膜形成物质和溶剂的液体供给到基板上，使涂膜的膜厚变化大致收敛，使涂膜静置 在大致收敛之后的预定条件下的包括水分的气氛中，预定条件使得涂膜暴露于大气的时间与在大气附近的气氛中的每单位体积的含水量 使涂膜的表面大于或等于预定值，并在待机之后在基板上形成固体薄膜，通过在涂层中除去溶剂而形成薄膜 膜和热处理，以在涂膜中产生与涂层型薄膜形成物质不可逆的反应。

    Film forming method, and substrate-processing apparatus
    4.
    发明申请
    Film forming method, and substrate-processing apparatus 失效
    成膜方法和基板处理装置

    公开(公告)号：US20050208777A1

    公开(公告)日：2005-09-22

    申请号：US11034926

    申请日：2005-01-14

    申请人： Hirokazu Kato ,  Tomoyuki Takeishi ,  Shinichi Ito

    发明人： Hirokazu Kato ,  Tomoyuki Takeishi ,  Shinichi Ito

    IPC分类号： G03F7/16 ,  B05C9/12 ,  B05C13/00 ,  B05D3/00 ,  B05D3/02 ,  G02F1/136 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26 ,  G03F7/38 ,  H01L21/00 ,  H01L21/027 ,  H01L21/20 ,  H01L21/312 ,  H01L21/469

    CPC分类号： H01L21/02282 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0274 ,  H01L21/312

    摘要： A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an atmosphere including moisture under a predetermined condition after the substantial-convergence, the predetermined condition being such that a product of a time for which the coating film is exposed to the atmosphere, a predetermined time, and a water content per unit volume in an atmosphere in the vicinity of a surface of the coating film is made to be greater than or equal to a predetermined value, and forming a solid thin film on the substrate after the stand-by, the thin film being formed by carrying out an elimination of the solvent in the coating film and heat treatment for generating an irreversible reaction to the coating type thin film forming substance in the coating film.

    摘要翻译： 一种成膜方法，包括在基板上形成液体涂膜，将含有涂膜型薄膜形成物质和溶剂的液体供给到基板上，使涂膜的膜厚变化大致收敛，使涂膜静置 在基本收敛之后的预定条件下包括水分的气氛中，预定条件使得涂膜暴露于大气中的时间，预定时间和每单位体积的水含量的乘积 使涂膜表面附近的气氛大于或等于预定值，并且在待机之后在基板上形成固体薄膜，通过执行消除形成薄膜 涂膜中的溶剂和用于对涂膜中的涂层型薄膜形成物质产生不可逆反应的热处理。

    Imprint method
    7.
    发明授权
    Imprint method 有权
    印记法

    公开(公告)号：US08419995B2

    公开(公告)日：2013-04-16

    申请号：US12563461

    申请日：2009-09-21

    申请人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

    发明人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

    IPC分类号： B28B11/08 ,  B29C35/08

    CPC分类号： B29C37/0003 ,  B29C35/0888 ,  B29C37/006 ,  B29C59/022 ,  B29C2035/0822 ,  B29C2035/0827 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

    摘要翻译： 压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂 光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化 施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

    Substrate processing apparatus and method
    8.
    发明授权
    Substrate processing apparatus and method 失效
    基板加工装置及方法

    公开(公告)号：US07779777B2

    公开(公告)日：2010-08-24

    申请号：US12466525

    申请日：2009-05-15

    申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    IPC分类号： B05B15/02 ,  B05B3/00 ,  B05B1/28 ,  B05B13/02

    CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

    摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

    摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

    Substrate processing apparatus and method
    9.
    发明申请
    Substrate processing apparatus and method 审中-公开
    基板加工装置及方法

    公开(公告)号：US20070266936A1

    公开(公告)日：2007-11-22

    申请号：US11798132

    申请日：2007-05-10

    申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

    IPC分类号： B05C11/02

    CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

    摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

    摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    10.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
    半导体器件制造方法

    公开(公告)号：US20100143849A1

    公开(公告)日：2010-06-10

    申请号：US12631463

    申请日：2009-12-04

    申请人： Tatsuhiko Ema ,  Yuriko Seino ,  Shinichi Ito ,  Hirokazu Kato

    发明人： Tatsuhiko Ema ,  Yuriko Seino ,  Shinichi Ito ,  Hirokazu Kato

    IPC分类号： G03F7/20

    CPC分类号： G03F7/091 ,  G03F7/11

    摘要： A semiconductor device manufacturing method includes: forming a foundation film on a semiconductor wafer; after forming the foundation film, forming a reaction layer of the semiconductor wafer and the foundation film therebetween; removing the foundation film and leaving the reaction layer on the semiconductor wafer; forming a resist film on the reaction layer; patterning the resist film; and using the patterned resist film as a mask to perform processing on the semiconductor wafer.

    摘要翻译： 半导体器件制造方法包括：在半导体晶片上形成基底膜; 在形成基础膜之后，形成半导体晶片的反应层和其间的基础膜; 去除基底膜并将反应层留在半导体晶片上; 在反应层上形成抗蚀膜; 图案化抗蚀剂膜; 并使用图案化的抗蚀剂膜作为掩模对半导体晶片进行处理。