公开(公告)号：US20050003654A1

公开(公告)日：2005-01-06

申请号：US10680668

申请日：2003-10-07

申请人： Hiroshi Horikoshi ,  Yuji Segawa ,  Takeshi Nogami

发明人： Hiroshi Horikoshi ,  Yuji Segawa ,  Takeshi Nogami

IPC分类号： C23C18/18 ,  C23C18/32 ,  C23C18/50 ,  C25D5/50 ,  C25D7/12 ,  H01L21/28 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76877 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76873

摘要： A method of producing a semiconductor device capable of suppressing damages by corrosion on wiring in a catalyst process performed in electroless plating processing on a Co base material, etc. in producing a semiconductor device having wiring of Cu, etc., having steps of forming metal wiring including an additive on a first insulation film formed in a semiconductor substrate, and forming on the metal wiring a barrier layer for preventing diffusion of constituting elements of the metal wiring, wherein said additive is an element to reduce corrosion of the metal wiring at the time of forming the barrier layer in the step of forming the metal wiring.

摘要翻译： 一种制造半导体器件的方法，该半导体器件能够抑制对在Co基材等的无电解电镀处理中进行的催化剂工艺中的布线的腐蚀的损伤，以制造具有Cu等布线的半导体器件，其具有形成金属的步骤 在半导体基板上形成的第一绝缘膜上具有添加剂的布线，在金属布线上形成防止金属布线构成元件扩散的阻挡层，其中，所述添加剂是减少金属布线的腐蚀的元素 在形成金属布线的步骤中形成阻挡层的时间。

公开(公告)号：US20050014359A1

公开(公告)日：2005-01-20

申请号：US10486446

申请日：2003-06-20

申请人： Yuji Segawa ,  Takeshi Nogami ,  Hiroshi Horikoshi ,  Naoki Komai

发明人： Yuji Segawa ,  Takeshi Nogami ,  Hiroshi Horikoshi ,  Naoki Komai

IPC分类号： C23C18/16 ,  C23C18/18 ,  C23C18/31 ,  C23C18/50 ,  C25D3/12 ,  C25D3/58 ,  C25D7/12 ,  H01L21/02 ,  H01L21/285 ,  H01L21/288 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76849 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1653 ,  C23C18/1831 ,  C23C18/50 ,  C25D3/58 ,  C25D5/02 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device for realizing a semiconductor device which is suitable for enhancing the operating speed thereof and which is high in quality and reliability is provided. The method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device including a barrier film (7) having a copper diffusion preventive function and formed on a copper-containing metallic wire (9), the method including the steps of: conducting electroplating by use of an electroplating liquid containing a catalyst metal (10) added thereto so as thereby to form the metallic wiring (2) containing the catalyst metal (10); and conducting electroless plating by use of the catalyst metal (10) exposed at the surface of the metallic wiring (2) as a catalyst so as thereby to form the barrier film (7) having the copper diffusion preventive function on the metallic wiring (2).

摘要翻译： 提供了一种制造半导体器件的方法，该半导体器件用于实现适于提高其工作速度且质量和可靠性高的半导体器件。 制造半导体器件的方法是制造包括具有铜扩散防止功能并形成在含铜金属线（9）上的阻挡膜（7）的半导体器件的方法，所述方法包括以下步骤：进行电镀 通过使用含有催化剂金属（10）的电镀液体，从而形成含有催化剂金属（10）的金属配线（2）。 通过使用在金属布线（2）的表面露出的催化剂金属（10）作为催化剂进行化学镀，从而在金属布线（2）上形成具有铜扩散防止功能的阻挡膜（7） ）。

公开(公告)号：US06979645B2

公开(公告)日：2005-12-27

申请号：US10680668

申请日：2003-10-07

申请人： Hiroshi Horikoshi ,  Yuji Segawa ,  Takeshi Nogami

发明人： Hiroshi Horikoshi ,  Yuji Segawa ,  Takeshi Nogami

IPC分类号： C23C18/18 ,  C23C18/32 ,  C23C18/50 ,  C25D5/50 ,  C25D7/12 ,  H01L21/28 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76877 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76873

摘要： A method of producing a semiconductor device capable of suppressing damages by corrosion on wiring in a catalyst process performed in electroless plating processing on a Co base material, etc. in producing a semiconductor device having wiring of Cu, etc., having steps of forming metal wiring including an additive on a first insulation film formed in a semiconductor substrate, and forming on the metal wiring a barrier layer for preventing diffusion of constituting elements of the metal wiring, wherein said additive is an element to reduce corrosion of the metal wiring at the time of forming the barrier layer in the step of forming the metal wiring.

摘要翻译： 一种制造半导体器件的方法，该半导体器件能够抑制对在Co基材等的无电解电镀处理中进行的催化剂工艺中的布线的腐蚀的损伤，以制造具有Cu等布线的半导体器件，其具有形成金属的步骤 在半导体基板上形成的第一绝缘膜上具有添加剂的布线，在金属布线上形成防止金属布线构成元件扩散的阻挡层，其中，所述添加剂是减少金属布线的腐蚀的元素 在形成金属布线的步骤中形成阻挡层的时间。

公开(公告)号：US06911396B2

公开(公告)日：2005-06-28

申请号：US10469580

申请日：2002-12-27

申请人： Shuzo Sato ,  Takeshi Nogami ,  Yuji Segawa

发明人： Shuzo Sato ,  Takeshi Nogami ,  Yuji Segawa

IPC分类号： C25D5/48 ,  C25D7/12 ,  C25F3/22 ,  H01L21/28 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/311 ,  H01L21/20 ,  H01L21/461

CPC分类号： H01L21/76877 ,  C25D5/48 ,  C25D7/12 ,  C25F3/22 ,  H01L21/2885 ,  H01L21/7684

摘要： Concentration of electric current due to an additive (particularly, a brightener) remaining or precipitated in a high concentration at grain boundary triple points and wiring groove portions in the surface layer of a copper plating film is obviated, whereby precedent dissolution and/or abnormal dissolution due to concentration of electric current is restrained, and an electropolished surface of the copper plating film with excellent surface smoothness is obtained.A method of producing a metallic film includes the steps of: forming a metallic plating film (copper plating film (15)) by use of a plating solution prepared by adding a plating additive for restraining void generation, bottom-up fill and overfill; and electropolishing the metallic plating film by use of an electropolishing solution prepared by adding a polishing additive capable of reacting or coupling with the plating additive component contained or precipitated in the surface layer of the metallic plating film.

摘要翻译： 避免了由于在镀铜膜的表面层中的晶界三点和布线槽部分处高浓度地残留或沉淀的添加剂（特别是增白剂）导致的电流浓度，从而导致先前的溶解和/或异常溶解 由于电流的集中受到抑制，并且获得了具有优异表面平滑度的镀铜膜的电抛光表面。 制造金属膜的方法包括以下步骤：通过使用通过添加用于抑制空洞产生的电镀添加剂，自底向上填充和填充填充而制备的电镀液，形成金属镀膜（镀铜膜（15））。 并使用通过添加能够与包含或沉淀在金属镀膜的表面层中的镀覆添加剂成分反应或偶合的抛光添加剂而制备的电解抛光溶液电抛光金属镀膜。

公开(公告)号：US06797623B2

公开(公告)日：2004-09-28

申请号：US09800580

申请日：2001-03-08

申请人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshio ,  Hiizu Ootorii ,  Zenya Yasuda ,  Masao Ishihara ,  Takeshi Nogami ,  Naoki Komai

发明人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshio ,  Hiizu Ootorii ,  Zenya Yasuda ,  Masao Ishihara ,  Takeshi Nogami ,  Naoki Komai

IPC分类号： H01L21302

CPC分类号： B24B37/042 ,  B23H5/08 ,  B24B37/046 ,  B24B37/16 ,  B24B37/26 ,  C25F3/30 ,  C25F7/00 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76843

摘要： A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper film is flattened.

摘要翻译： 一种生产方法和抛光半导体器件和抛光装置的方法，其能够容易地平坦化金属膜的初始不均匀性，除去过量金属膜的效率优异，并且能够抑制对层间绝缘膜的损伤 在通过抛光使金属膜平坦化时，金属膜下方的抛光方法包括以下步骤：在阴极构件和铜膜之间插入包含螯合剂的电解液，在用作阴极的阴极构件和铜 膜用作氧化铜膜的表面并形成氧化铜的螯合膜，选择性地除去与铜膜形状相对应的螯合膜的突出部分，以暴露铜膜的突出部分 并重复上述螯合膜形成步骤和上述螯合膜去除步骤，直到突出 使铜膜变平。

公开(公告)号：US20070051632A1

公开(公告)日：2007-03-08

申请号：US11590723

申请日：2006-10-31

申请人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshio ,  Takeshi Nogami

发明人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshio ,  Takeshi Nogami

IPC分类号： C25D5/02

CPC分类号： C25D5/02 ,  B24B37/042 ,  C25D5/04 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  C25F3/16 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76888

摘要： A polishing method and polishing apparatus able to easily flatten an initial unevenness with an excellent efficiency of removal of excess copper film and suppress damage to a lower interlayer insulation film, and a plating method and plating apparatus able to deposit a flat copper film. The polishing method comprises the steps of measuring thickness equivalent data of a film on a wafer, making a cathode member smaller than the surface face a region thereof, interposing an electrolytic solution between the surface and the cathode member, applying a voltage using the cathode member as a cathode and the film an anode, performing electrolytic polishing by electrolytic elution or anodic oxidation and chelation and removal of a chelate film in the same region preferentially from projecting portions of the film until removing the target amount of film obtained from the thickness equivalent data, and repeating steps of moving the cathode member to another region to flattening the regions over the entire surface. Further, plating is performed by a reverse reaction of the above.

摘要翻译： 一种抛光方法和抛光装置，其能够以极好的去除多余的铜膜的效率并且抑制对下层间绝缘膜的损坏而容易地平坦化初始凹凸，以及能够沉积扁平铜膜的电镀方法和电镀装置。 抛光方法包括以下步骤：测量晶片上的膜的厚度当量数据，使阴极部件小于表面面积的阴极部件，在电极表面和阴极部件之间插入电解液，使用阴极部件施加电压 作为阴极，膜是阳极，通过电解洗脱或阳极氧化进行电解抛光，并优先从膜的突出部分螯合并除去相同区域中的螯合膜，直到从厚度等效数据中除去目标量的膜 并且重复将阴极部件移动到另一区域以使整个表面上的区域变平的步骤。 此外，通过上述的反作用进行电镀。

公开(公告)号：US06855634B2

公开(公告)日：2005-02-15

申请号：US09963966

申请日：2001-09-26

申请人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshio ,  Takeshi Nogami

发明人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshio ,  Takeshi Nogami

IPC分类号： B23H5/08 ,  B24B37/04 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/042 ,  H01L21/76807

摘要： A polishing method able to easily flatten unevenness formed on the surface of a film to be polished and able to efficiently polish the film flat while suppressing damage to an interlayer insulating film below the film, comprising, when polishing an object having a film such as an interconnection layer formed burying interconnection grooves formed in an insulating film of a substrate, supplying a polishing solution over the surface to be polished at least substantially parallel to the surface to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the processing solution or arranging a cathode member facing the surface and supplying an electrolytic solution containing a chelating agent between the surface and cathode member while supplying voltage between the film and the cathode member to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the electrolytic solution, and a polishing apparatus using the same.

摘要翻译： 一种抛光方法，其能够容易地使形成在待研磨的膜的表面上的凹凸变平，并且能够有效地抛光该薄膜，同时抑制薄膜下面的层间绝缘膜的损坏，其特征在于，当研磨具有诸如 互连层形成在衬底的绝缘膜中形成的互连槽，将至少基本上平行于表面的待抛光表面上的抛光溶液提供给抛光层，以优先通过抛光膜的突出部分并通过剪切使表面变平 处理溶液的应力或者配置面向表面的阴极部件，并在表面和阴极部件之间提供含有螯合剂的电解液，同时在膜和阴极部件之间提供电压，以通过抛光膜的突出部分优先除去， 通过电解质的剪切应力使表面变平 溶液和使用其的抛光装置。

公开(公告)号：US06835292B2

公开(公告)日：2004-12-28

申请号：US10697814

申请日：2003-10-29

申请人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshiq ,  Takeshi Nogami

发明人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshiq ,  Takeshi Nogami

IPC分类号： C25F700

CPC分类号： H01L21/3212 ,  B24B37/042 ,  H01L21/76807

摘要： A polishing method able to easily flatten unevenness formed on the surface of a film to be polished and able to efficiently polish the film flat while suppressing damage to an interlayer insulating film below the film, comprising, when polishing an object having a film such as an interconnection layer formed burying interconnection grooves formed in an insulating film of a substrate, supplying a polishing solution over the surface to be polished at least substantially parallel to the surface to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the processing solution or arranging a cathode member facing the surface and supplying an electrolytic solution containing a chelating agent between the surface and cathode member while supplying voltage between the film and the cathode member to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the electrolytic solution, and a polishing apparatus using the same.

摘要翻译： 一种抛光方法，其能够容易地使形成在待研磨的膜的表面上的凹凸变平，并且能够有效地抛光该薄膜，同时抑制薄膜下面的层间绝缘膜的损坏，其特征在于，当研磨具有诸如 互连层形成在衬底的绝缘膜中形成的互连槽，将至少基本上平行于表面的待抛光表面上的抛光溶液提供给抛光层，以优先通过抛光膜的突出部分并通过剪切使表面变平 处理溶液的应力或者配置面向表面的阴极部件，并在表面和阴极部件之间提供含有螯合剂的电解液，同时在膜和阴极部件之间提供电压，以通过抛光膜的突出部分优先除去， 通过电解质的剪切应力使表面变平 溶液和使用其的抛光装置。

公开(公告)号：US06479384B2

公开(公告)日：2002-11-12

申请号：US09784715

申请日：2001-02-15

申请人： Naoki Komai ,  Yuji Segawa ,  Takeshi Nogami

发明人： Naoki Komai ,  Yuji Segawa ,  Takeshi Nogami

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76874 ,  H01L21/76877

摘要： A process for fabricating a semiconductor device, which comprises forming, on a metal wiring formed from copper or a copper alloy, a barrier film which functions as a diffusion-preventing film for the metal wiring by an electroless plating method, wherein a catalytic metal film which serves as a catalyst in the electroless plating method is selectively formed on the metal wiring by a displacement plating method using a displacement plating solution at a temperature in the range of 30° C. or more and lower than a boiling point thereof, and the barrier film is selectively formed on the catalytic metal film by the electroless plating method. It is an object of the present invention, to selectively and uniformly carry out the catalyst activation to the surface of the metal wiring made of copper or a copper alloy by using palladium so as to improve plating property of the electroless plating method using a hypophosphite as a reducing agent and the reliability of the wiring.

摘要翻译： 一种制造半导体器件的方法，其包括在由铜或铜合金形成的金属布线上形成通过化学镀方法用作金属布线的防扩散膜的阻挡膜，其中催化金属膜 在化学镀方法中作为催化剂的催化剂通过使用位移镀液在30℃以上且低于其沸点的温度下的位移镀方法选择性地形成在金属配线上， 通过化学镀方法在催化金属膜上选择性地形成阻挡膜。 本发明的目的是通过使用钯来选择性地和均匀地进行由铜或铜合金制成的金属配线的表面的催化剂活化，从而提高使用次磷酸盐的化学镀方法的电镀性能 还原剂和布线的可靠性。

公开(公告)号：US07186322B2

公开(公告)日：2007-03-06

申请号：US10327860

申请日：2002-12-26

申请人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshio ,  Hiizu Ootorii ,  Zenya Yasuda ,  Masao Ishihara ,  Takeshi Nogami ,  Naoki Komai

发明人： Shuzo Sato ,  Yuji Segawa ,  Akira Yoshio ,  Hiizu Ootorii ,  Zenya Yasuda ,  Masao Ishihara ,  Takeshi Nogami ,  Naoki Komai

IPC分类号： C25D17/00

CPC分类号： B24B37/042 ,  B23H5/08 ,  B24B37/046 ,  B24B37/16 ,  B24B37/26 ,  C25F3/30 ,  C25F7/00 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76843

摘要： A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper film is flattened.

摘要翻译： 一种生产方法和抛光半导体器件和抛光装置的方法，其能够容易地平坦化金属膜的初始不均匀性，除去过量金属膜的效率优异，并且能够抑制对层间绝缘膜的损伤 在通过抛光使金属膜平坦化时，金属膜下方的抛光方法包括以下步骤：在阴极构件和铜膜之间插入包含螯合剂的电解液，在用作阴极的阴极构件和铜 膜用作氧化铜膜的表面并形成氧化铜的螯合膜，选择性地除去与铜膜形状相对应的螯合膜的突出部分，以暴露铜膜的突出部分 并重复上述螯合膜形成步骤和上述螯合膜去除步骤，直到突出 使铜膜变平。