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    Semiconductor device
    1.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：US20060231871A1

    公开(公告)日：2006-10-19

    申请号：US11374141

    申请日：2006-03-14

    申请人： Hirotaka Amasuga ,  Toshihiko Shiga ,  Tetsuo Kunii ,  Tomoki Oku

    发明人： Hirotaka Amasuga ,  Toshihiko Shiga ,  Tetsuo Kunii ,  Tomoki Oku

    IPC分类号： H01L29/80 ,  H01L29/76 ,  H01L31/112 ,  H01L29/94 ,  H01L31/00

    CPC分类号： H01L29/475 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/42316

    摘要： A gate electrode serving as a Schottky electrode includes a TaNx layer and an Au layer. The TaNx layer serves as a barrier metal for preventing atoms from diffusing from the Au layer into a substrate. TaNx does not contain Si, and therefore has a higher humidity resistance than WSiN containing Si. Accordingly, the gate electrode has a higher humidity resistance than a conventional gate electrode including a WSiN layer. Setting a nitrogen content at less than 0.8 can prevent significant degradation in Schottky characteristics as compared to the conventional gate electrode. Setting the nitrogen content at 0.5 or less, Schottky characteristics can be improved more than in the conventional gate electrode.

    摘要翻译： 用作肖特基电极的栅电极包括TaNx层和Au层。 TaNx层用作防止原子从Au层扩散到衬底中的阻挡金属。 TaNx不含Si，因此具有比含有Si的WSiN更高的耐湿性。 因此，栅电极具有比包含WSiN层的常规栅电极更高的耐湿性。 与常规栅电极相比，氮含量小于0.8可以防止肖特基特性的显着降低。 将氮含量设定为0.5以下，与常规栅电极相比，肖特基特性可以得到改善。

    Semiconductor device including field effect transistor with reduced electric field concentration
    2.
    发明授权
    Semiconductor device including field effect transistor with reduced electric field concentration 有权
    包括具有降低的电场浓度的场效应晶体管的半导体器件

    公开(公告)号：US08232609B2

    公开(公告)日：2012-07-31

    申请号：US12828328

    申请日：2010-07-01

    申请人： Tetsuo Kunii ,  Hirotaka Amasuga ,  Yoshitsugu Yamamoto ,  Youichi Nogami

    发明人： Tetsuo Kunii ,  Hirotaka Amasuga ,  Yoshitsugu Yamamoto ,  Youichi Nogami

    IPC分类号： H01L29/76

    CPC分类号： H01L29/4238 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/812

    摘要： A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region.

    摘要翻译： 半导体器件包括：半导体衬底; 在所述半导体衬底的顶表面处的杂质掺杂区域; 绝缘区域，位于半导体衬底的顶表面上的杂质掺杂区域周围; 杂质掺杂区上的栅电极; 位于所述杂质掺杂区域上的第一电极和第二电极，夹着所述栅电极; 位于所述绝缘区域上并连接到所述栅电极的第一焊盘; 在所述绝缘区域上跨越所述杂质掺杂区域面对所述第一焊盘的第二焊盘，并且连接到所述第二电极; 以及位于所述绝缘区域上的所述第一电极和所述第二焊盘之间的导体。

    Semiconductor device and method of manufacturing the semiconductor device
    3.
    发明申请
    Semiconductor device and method of manufacturing the semiconductor device 失效
    半导体装置及其制造方法

    公开(公告)号：US20070132021A1

    公开(公告)日：2007-06-14

    申请号：US11445181

    申请日：2006-06-02

    申请人： Tetsuo Kunii ,  Yoshitsugu Yamamoto ,  Hirotaka Amasuga

    发明人： Tetsuo Kunii ,  Yoshitsugu Yamamoto ,  Hirotaka Amasuga

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7783 ,  H01L29/0891 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66856 ,  H01L29/8128

    摘要： A semiconductor device includes a substrate having a recess, a gate electrode in the recess in the substrate, and a source electrode and a drain electrode disposed on opposite sides of the gate electrode. An insulating film is on at least on a surface of the gate electrode and a portion in the recess, other than where the gate electrode is located, and a shield electrode connected to the source electrode is located on a portion of the insulating film between the gate electrode and the drain electrode.

    摘要翻译： 半导体器件包括具有凹部的基板，在基板的凹部中的栅电极以及设置在栅电极的相对侧上的源电极和漏电极。 绝缘膜至少在栅电极的表面和凹部中的除了栅电极所在的部分之外的部分上，并且与源电极连接的屏蔽电极位于绝缘膜的一部分之间 栅电极和漏电极。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110006351A1

    公开(公告)日：2011-01-13

    申请号：US12828328

    申请日：2010-07-01

    申请人： Tetsuo Kunii ,  Hirotaka Amasuga ,  Yoshitsugu Yamamoto ,  Youichi Nogami

    发明人： Tetsuo Kunii ,  Hirotaka Amasuga ,  Yoshitsugu Yamamoto ,  Youichi Nogami

    IPC分类号： H01L27/06 ,  H01L29/78 ,  H01L27/088

    CPC分类号： H01L29/4238 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/812

    摘要： A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region.

    摘要翻译： 半导体器件包括：半导体衬底; 在所述半导体衬底的顶表面处的杂质掺杂区域; 绝缘区域，位于半导体衬底的顶表面上的杂质掺杂区域周围; 杂质掺杂区上的栅电极; 位于所述杂质掺杂区域上的第一电极和第二电极，夹着所述栅电极; 位于所述绝缘区域上并连接到所述栅电极的第一焊盘; 在所述绝缘区域上跨越所述杂质掺杂区域面对所述第一焊盘的第二焊盘，并且连接到所述第二电极; 以及位于绝缘区域上的第一电极和第二焊盘之间的导体。

    Field-effect transistor
    5.
    发明授权
    Field-effect transistor 失效
    场效应晶体管

    公开(公告)号：US07557389B2

    公开(公告)日：2009-07-07

    申请号：US11557551

    申请日：2006-11-08

    申请人： Hirotaka Amasuga ,  Tetsuo Kunii

    发明人： Hirotaka Amasuga ,  Tetsuo Kunii

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316

    摘要： A field-effect transistor includes a channel layer formed of a III-V compound semiconductor excluding aluminum; a gate contact layer formed of a III-V compound semiconductor and provided on the channel layer, the III-V compound semiconductor having a dopant concentration equal to or less than 1×1016 cm−3, containing aluminum, and having a large band gap energy; a gate buried layer of a III-V compound semiconductor and provided on the gate contact layer; and a gate electrode buried in the gate buried layer and in contact with the gate contact layer. A recess in the gate buried layer is opposed to an upper side wall of the gate electrode with a gap therebetween and a part of the gate buried layer, and where a contact with a lower side wall of the gate electrode is established, part of the gate buried layer remains without being removed.

    摘要翻译： 场效应晶体管包括由不包括铝的III-V族化合物半导体形成的沟道层; 由III-V族化合物半导体形成的栅极接触层，其设置在所述沟道层上，所述III-V族化合物半导体的掺杂剂浓度为1×10 16 cm -3以下，含有铝，并且具有大的带隙能量; 设置在栅极接触层上的III-V族化合物半导体的栅极掩埋层; 以及掩埋在栅极掩埋层中并与栅极接触层接触的栅电极。 栅极掩埋层中的凹部与栅电极的上侧壁相对，其间具有间隙，并且栅极掩埋层的一部分与栅电极的下侧壁的接触被建立， 栅极掩埋层保持不被去除。

    Semiconductor device with recessed gate and shield electrode
    7.
    发明授权
    Semiconductor device with recessed gate and shield electrode 失效
    具有凹入栅极和屏蔽电极的半导体器件

    公开(公告)号：US07528443B2

    公开(公告)日：2009-05-05

    申请号：US11445181

    申请日：2006-06-02

    申请人： Tetsuo Kunii ,  Yoshitsugu Yamamoto ,  Hirotaka Amasuga

    发明人： Tetsuo Kunii ,  Yoshitsugu Yamamoto ,  Hirotaka Amasuga

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7783 ,  H01L29/0891 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66856 ,  H01L29/8128

    摘要： A semiconductor device includes a substrate having a recess, a gate electrode in the recess in the substrate, and a source electrode and a drain electrode disposed on opposite sides of the gate electrode. An insulating film is on at least on a surface of the gate electrode and a portion in the recess, other than where the gate electrode is located, and a shield electrode connected to the source electrode is located on a portion of the insulating film between the gate electrode and the drain electrode.

    摘要翻译： 半导体器件包括具有凹部的基板，在基板的凹部中的栅电极以及设置在栅电极的相对侧上的源电极和漏电极。 绝缘膜至少在栅电极的表面和凹部中的除了栅电极所在的部分之外的部分上，并且与源电极连接的屏蔽电极位于绝缘膜的一部分之间 栅电极和漏电极。

    High-frequency semiconductor device
    8.
    发明申请
    High-frequency semiconductor device 审中-公开
    高频半导体器件

    公开(公告)号：US20070145415A1

    公开(公告)日：2007-06-28

    申请号：US11484624

    申请日：2006-07-12

    申请人： Akira Inoue ,  Hirotaka Amasuga ,  Tetsuo Kunii

    发明人： Akira Inoue ,  Hirotaka Amasuga ,  Tetsuo Kunii

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7785 ,  H01L29/0692 ,  H01L29/42316

    摘要： A semiconductor device operating at a frequency between 0.8 GHz and 300 GHz includes an active region that is positioned on a semi-insulating GaAs substrate; a gate electrode that is positioned in the active region; and a source electrode and a drain electrode that are positioned on the surface of the active region facing each other with the gate electrode positioned between the source electrode and the drain electrode. A drain side active region, which is a part of the active region and positioned between the gate electrode and the drain electrode, increases in width in the direction to the drain electrode from the gate electrode.

    摘要翻译： 以0.8GHz和300GHz之间的频率工作的半导体器件包括位于半绝缘GaAs衬底上的有源区; 位于有源区中的栅电极; 以及源电极和漏电极，其位于有源区的表面上，栅电极位于源电极和漏电极之间。 作为有源区的一部分并且位于栅电极和漏电极之间的漏极侧有源区在从栅电极到漏电极的方向上的宽度增加。