公开(公告)号：US08148712B2

公开(公告)日：2012-04-03

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/06

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层含有具有确定的结晶界面的柱状晶体，柱状晶体密度为1×10 3〜1×10 5个晶体/μm2。

公开(公告)号：US20090194784A1

公开(公告)日：2009-08-06

申请号：US12306609

申请日：2008-01-15

申请人： Hiroaki Kaji ,  Yasunori Yokoyama ,  Hiromitsu Sakai

发明人： Hiroaki Kaji ,  Yasunori Yokoyama ,  Hiromitsu Sakai

IPC分类号： H01L33/00 ,  H01L29/205 ,  H01L29/20 ,  H01L21/20

CPC分类号： C23C16/34 ,  B82Y20/00 ,  C23C14/0617 ,  C23C14/0641 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method.

摘要翻译： 本发明的III族氮化物化合物半导体器件包括衬底，设置在衬底上的中间层和设置在中间层上的基底层，其中在（0002）平面的摇摆曲线中半高的全宽度 （10-10）平面的摆动曲线为100弧度以下，半高的全宽为300弧度以下。 此外，本发明的III族氮化物化合物半导体器件的制造方法包括使用溅射法形成中间层。

公开(公告)号：US20090146161A1

公开(公告)日：2009-06-11

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L33/00

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。

公开(公告)号：US20100213476A1

公开(公告)日：2010-08-26

申请号：US12377273

申请日：2007-09-26

申请人： Yasunori Yokoyama ,  Hiromitsu Sakai ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hiromitsu Sakai ,  Hisayuki Miki

IPC分类号： H01L33/30 ,  H01L21/20

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2924/0002 ,  H01S5/0213 ,  H01S5/34333 ,  H01S2301/173 ,  H01L2924/00

摘要： The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. The method of manufacturing a group-III nitride compound semiconductor light-emitting device includes: a pre-process of performing plasma processing on a substrate (11); a sputtering process of forming an intermediate layer (12) made of at least a group-III nitride compound on the substrate (11) using a sputtering method after the pre-process; and a process of sequentially forming an n-type semiconductor layer (14) including an underlying layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) on the intermediate layer (12).

摘要翻译： 本发明提供了具有高生产率和良好发射特性的III族氮化物化合物半导体发光器件，制造III族氮化物半导体发光器件和灯的方法。 III族氮化物化合物半导体发光器件的制造方法包括：对衬底（11）进行等离子体处理的预处理; 在预处理之后使用溅射法在所述基板（11）上形成由至少III族氮化物化合物制成的中间层（12）的溅射工艺; 以及在中间层（12）上依次形成包括下层（14a），发光层（15）和p型半导体层（16）的n型半导体层（14）的工序。

公开(公告)号：US08273592B2

公开(公告)日：2012-09-25

申请号：US12513595

申请日：2007-12-05

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/0002 ,  H01L2924/181 ,  H01S5/0206 ,  H01S5/32341 ,  H01S2304/04 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The object of the present invention is to provide a method of manufacturing a Group-III nitride semiconductor light-emitting device that is highly productive and that enables production of a device having excellent light-emitting properties; a Group-III nitride semiconductor light-emitting device; and a lamp using the light emitting device. The present invention provides a method of manufacturing a Group-III nitride semiconductor light-emitting device, comprising the steps of: activating a gas including a Group-V element and a metal material with plasma, thereby reacting the gas with the metal material; forming on a substrate an intermediate layer that is made of a Group-III nitride compound; and stacking an n-type semiconductor layer that is made of a Group-III nitride semiconductor, a light-emitting layer, and a p-type semiconductor layer, sequentially on the intermediate layer, wherein the Group-V element is nitrogen, the gas fraction of nitrogen in the gas is within a range of more than 20% to less than 99% during forming of the intermediate layer, and the intermediate layer is formed into a single crystal structure.

摘要翻译： 本发明的目的是提供一种制造高生产率的III族氮化物半导体发光器件的方法，并且能够制造具有优异的发光特性的器件; III族氮化物半导体发光器件; 以及使用该发光装置的灯。 本发明提供一种制造III族氮化物半导体发光器件的方法，包括以下步骤：用等离子体激活包括V族元素和金属材料的气体，从而使气体与金属材料反应; 在基板上形成由III族氮化物化合物制成的中间层; 并且在中间层上依次堆叠由III族氮化物半导体，发光层和p型半导体层制成的n型半导体层，其中V族元素为氮，气体 在形成中间层期间，气体中氮的分数在大于20％至小于99％的范围内，并且中间层形成为单晶结构。

公开(公告)号：US08227359B2

公开(公告)日：2012-07-24

申请号：US13205569

申请日：2011-08-08

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L21/00 ,  H01L21/324 ,  H01L21/477

CPC分类号： C23C14/0617 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631 ,  H01L33/007 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.

摘要翻译： 根据本发明的制造III族氮化物半导体层的方法包括溅射步骤，将基板和包含III族元素的靶设置在室中，在室中引入用于形成等离子体的气体，并形成组 III族氮化物半导体层通过反应溅射法在衬底上添加Si作为掺杂剂，其中在用于形成等离子体的气体中加入Si氢化物。

公开(公告)号：US20100244040A1

公开(公告)日：2010-09-30

申请号：US12377522

申请日：2007-11-05

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/32 ,  H01L21/203

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/02244 ,  H01S5/0425 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

摘要翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯。 该方法包括以下步骤：通过使包含V族元素的气体与等离子体中的金属材料反应而形成在基底（11）上形成由III族氮化物化合物制成的中间层（12） 并在中间层（12）上依次形成由III族氮化物化合物半导体制成的n型半导体层（14），发光层（15）和p型半导体层（16）。 使用氮作为V族元素，中间层（12）的厚度在20〜80nm的范围内。

公开(公告)号：US20080121924A1

公开(公告)日：2008-05-29

申请号：US11943542

申请日：2007-11-20

申请人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Yasunori Yokoyama

发明人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Yasunori Yokoyama

IPC分类号： H01L33/00 ,  C23C14/34

CPC分类号： C23C14/3464 ,  C23C14/0617 ,  C30B25/06 ,  C30B29/406 ,  H01L33/0095 ,  H01L33/325 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A Group III nitride compound semiconductor light-emitting device manufacturing apparatus with a simple structure, which it is capable of easily optimizing the density of a dopant element in the crystals of a Group III nitride compound semiconductor and forming layers with high efficiency using a sputtering method. The manufacturing apparatus includes: a chamber; a Ga target containing a Ga element and a dopant target containing a dopant element, the Ga target and the dopant target being placed within the chamber; and a power application unit that applies power to the Ga target and the dopant target simultaneously or alternately.

摘要翻译： 具有简单结构的III族氮化物化合物半导体发光器件制造装置，其能够容易地优化III族氮化物半导体的晶体中的掺杂元素的密度，并且使用溅射法高效地形成层 。 制造装置包括：腔室; 包含Ga元素的Ga靶和包含掺杂元素的掺杂物靶，Ga靶和掺杂物靶放置在所述腔内; 以及同时或交替地向Ga靶和掺杂物靶施加电力的功率施加单元。

公开(公告)号：US08765507B2

公开(公告)日：2014-07-01

申请号：US12745304

申请日：2008-11-21

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/04

CPC分类号： C30B29/403 ,  C30B23/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/06 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/30111 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.

摘要翻译： 本发明的III族氮化物半导体的制造方法包括溅射工序，在基板和含Ga元素的靶的室中通过反应溅射法在基板上形成单晶III族氮化物半导体 其中所述溅射步骤包括各自的子步骤：在将衬底的温度设定为温度T1的同时进行III族氮化物半导体的成膜的第一溅射步骤; 以及在将衬底的温度降低到低于温度T1的温度T2的同时继续进行III族氮化物半导体的成膜的第二溅射步骤。

公开(公告)号：US08669129B2

公开(公告)日：2014-03-11

申请号：US12996329

申请日：2009-06-03

申请人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L21/02458 ,  C23C14/022 ,  C23C14/0617 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x

摘要翻译： 本发明的一个目的是提供一种具有优异的生产率并生产III族氮化物半导体发光器件和灯的III族氮化物半导体发光器件的制造方法，用于制造III族氮化物半导体的方法 在基板（11）上层压由III族氮化物构成的缓冲层（12）的发光装置，包括基底层（14a）的发光层 （15）和p型半导体层（16）依次层压在缓冲层（12）上，包括：预处理步骤，其中基板（11）用等离子体处理; 缓冲层形成步骤，其中具有由Al x Ga 1-x N（0 @ x <1）表示的组成的缓冲层（12）通过用等离子体激活形成在预处理衬底（11）上并使至少一种金属镓原料 和含有V族元素的气体; 以及基底层形成步骤，其中在缓冲层（12）上形成基底层（14a）。