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    Method for manufacturing capacitor of semiconductor element
    1.
    发明申请
    Method for manufacturing capacitor of semiconductor element 失效
    制造半导体元件电容器的方法

    公开(公告)号：US20060134856A1

    公开(公告)日：2006-06-22

    申请号：US11089122

    申请日：2005-03-24

    申请人： Ho Cho ,  Jun Chang ,  Eun Lee ,  Su Chae ,  Young Kim

    发明人： Ho Cho ,  Jun Chang ,  Eun Lee ,  Su Chae ,  Young Kim

    IPC分类号： H01L21/8242

    CPC分类号： H01L21/02312 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/3144 ,  H01L28/60

    摘要： A method for manufacturing a capacitor of a semiconductor element including: forming a bottom electrode of the capacitor on a semiconductor substrate; performing rapid thermal nitrification (RTN) on the upper surface of the bottom electrode; performing a thermal process on the obtained structure having the bottom electrode in a furnace under a nitride atmosphere to eliminate stress generated by the RTN; forming Al2O3 and HfO2 dielectric films on the nitrified bottom electrode; and forming a plate electrode of the capacitor on the Al2O3 and HfO2 dielectric films. The thermal process is performed after the RTN performed on the surface of the bottom electrode, so that stress, generated from the RTN, is alleviated, thereby allowing the capacitor to obtain a high capacitance and lowering leakage current.

    摘要翻译： 一种制造半导体元件的电容器的方法，包括：在半导体衬底上形成电容器的底部电极; 在底电极的上表面进行快速热硝化（RTN）; 对所获得的在氮化物气氛下的炉中具有底部电极的结构进行热处理以消除由RTN产生的应力; 在硝化的底部电极上形成Al 2 O 3 N 3和HfO 2 N 2电介质膜; 以及在Al 2 O 3和HfO 2 N 2电介质膜上形成电容器的平板电极。 在底电极表面进行RTN之后进行热处理，从而可以减轻由RTN产生的应力，从而使电容器获得高电容，降低漏电流。

    Gate structure of semiconductor device and method for forming the same
    2.
    发明申请
    Gate structure of semiconductor device and method for forming the same 失效
    半导体器件的栅极结构及其形成方法

    公开(公告)号：US20060151839A1

    公开(公告)日：2006-07-13

    申请号：US11268846

    申请日：2005-11-08

    申请人： Young Kim ,  Jun Chang ,  Min Lee ,  Yong Eun

    发明人： Young Kim ,  Jun Chang ,  Min Lee ,  Yong Eun

    IPC分类号： H01L29/78 ,  H01L21/4763

    CPC分类号： H01L27/10876 ,  H01L21/2815 ,  H01L29/66636

    摘要： Disclosed herein is a method for forming a gate structure of a semiconductor device. The method comprises forming a plurality of gates including a first gate dielectric film, a first gate conductive film, and a gate silicide film sequentially stacked on a silicon substrate having a field oxide film, forming a thermal oxide film on a side of the first gate conductive film, etching the silicon substrate exposed between the plurality of gates to a predetermined depth to form a plurality of trenches, forming a second gate oxide film on the interior wall of the trenches, and forming a second gate conductive film in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film, and the thermal oxide film.

    摘要翻译： 本文公开了一种用于形成半导体器件的栅极结构的方法。 该方法包括形成多个栅极，其包括依次层叠在具有场氧化膜的硅基板上的第一栅极电介质膜，第一栅极导电膜和栅极硅化物膜，在第一栅极的一侧形成热氧化膜 将暴露在所述多个栅极之间的硅衬底蚀刻到预定深度以形成多个沟槽，在所述沟槽的内壁上形成第二栅极氧化膜，并且形成间隔物形状的第二栅极导电膜 第二栅极氧化膜的预定区域，以及第一栅极导电膜，栅极硅化物膜和热氧化物膜的一侧。

    Method for manufacturing gate electrode of semiconductor device using aluminium nitride film
    3.
    发明申请
    Method for manufacturing gate electrode of semiconductor device using aluminium nitride film 审中-公开
    使用氮化铝膜制造半导体器件的栅电极的方法

    公开(公告)号：US20050272210A1

    公开(公告)日：2005-12-08

    申请号：US10998968

    申请日：2004-11-30

    申请人： Tae Lee ,  Jun Chang ,  Dong Park

    发明人： Tae Lee ,  Jun Chang ,  Dong Park

    IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L21/318 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/51

    CPC分类号： H01L29/518 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/823437

    摘要： A method for manufacturing gate electrode of semiconductor device using an aluminium nitride film is provided, the method including cleaning a surface of a semiconductor substrate, nitriding the surface of the substrate, forming a gate dielectric film comprising an aluminium nitride film on the surface of a semiconductor substrate, depositing a gate conductive layer and a hard mask layer on the gate dielectric film, and etching the hard mask layer, the gate conductive layer, the gate dielectric film to form a gate electrode.

    摘要翻译： 提供一种使用氮化铝膜制造半导体器件的栅电极的方法，该方法包括：清洗半导体衬底的表面，对衬底的表面进行氮化，在其表面上形成包含氮化铝膜的栅极电介质膜 半导体衬底，在栅极电介质膜上沉积栅极导电层和硬掩模层，并蚀刻硬掩模层，栅极导电层，栅极电介质膜以形成栅电极。

    On-chip network interfacing apparatus and method
    6.
    发明申请
    On-chip network interfacing apparatus and method 有权
    片上网络接口设备及方法

    公开(公告)号：US20060146811A1

    公开(公告)日：2006-07-06

    申请号：US11300731

    申请日：2005-12-14

    申请人： Jin Han ,  Young Bae ,  Han Cho ,  Jun Chang

    发明人： Jin Han ,  Young Bae ,  Han Cho ,  Jun Chang

    IPC分类号： H04L12/50

    CPC分类号： H04L49/10 ,  H04L49/109 ,  H04L49/3009 ,  H04L49/3018 ,  H04L49/503

    摘要： An on-chip network interfacing apparatus and method are provided. The apparatus includes a plurality of on-chip network ports; a switch receiving data from a first on-chip network port of the on-chip network ports and transmitting the received data to a second on-chip network port of the on-chip network ports; and an interface unit interfacing an advanced microcontroller bus architecture (AMBA) signal received from an Internet protocol module, which is designed according to an AMBA on-chip bus protocol, and outputting the interfacing result to the first on-chip network port; and interfacing the on-chip network signal received from the first on-chip network port, and outputting the interfacing result to the Internet protocol module. Accordingly, it is possible to establish communications at increased speeds by interfacing a signal according to the AMBA 2.0 on-chip bus protocol with a signal according to the on-chip network protocol.

    摘要翻译： 提供了片上网络接口设备和方法。 该装置包括多个片上网络端口; 从所述片上网络端口的第一片上网络端口接收数据并将所接收的数据发送到所述片上网络端口的第二片上网络端口; 以及接口单元，其连接从根据AMBA片上总线协议设计的因特网协议模块接收的先进的微控制器总线架构（AMBA）信号，并将接口结果输出到第一片上网络端口; 并且连接从第一片上网络端口接收的片上网络信号，并将接口结果输出到因特网协议模块。 因此，可以通过将根据AMBA 2.0片上总线协议的信号与根据片上网络协议的信号进行接口来以增加的速度建立通信。

    GENES OF IL-12p40 SUBUNIT MUTATED FOR IMPROVING THE ACTIVITY OF IL-12 AND USE THEREOF FOR DNA VACCINE ADJUVANT
    7.
    发明申请
    GENES OF IL-12p40 SUBUNIT MUTATED FOR IMPROVING THE ACTIVITY OF IL-12 AND USE THEREOF FOR DNA VACCINE ADJUVANT 有权
    用于改善IL-12活性的IL-12p40亚基基因及其用于DNA疫苗补充剂的用途

    公开(公告)号：US20070269408A1

    公开(公告)日：2007-11-22

    申请号：US11832993

    申请日：2007-08-02

    申请人： Young Chul SUNG ,  Sung Lee ,  Sang Ha ,  Man Song ,  Jun Chang

    发明人： Young Chul SUNG ,  Sung Lee ,  Sang Ha ,  Man Song ,  Jun Chang

    IPC分类号： A61K38/20 ,  A61K48/00 ,  C07K14/54 ,  C07H21/04 ,  C12P21/04

    CPC分类号： C07K14/005 ,  A61K39/39 ,  A61K2039/53 ,  A61K2039/55522 ,  A61K2039/57 ,  C12N2770/24222 ,  Y02A50/412

    摘要： The present invention relates to the IL-12p40 subunit mutant gene which can produce IL-12 (interleukin 12) of human and mouse origin with high activity, the expression vector including above mutant gene and the use of them to DNA vaccine adjuvant. Particularly, it relates to IL-12p40 mutant gene which inhibits the secretion of IL-12p40 but normally secretes active IL-12p70 by making mutation at Asn-222 (human) or Asn-220 (mouse) amino acid of IL-12p40, which acts as a competitive inhibitor of active form of IL-12, IL-12p70. Therefore, the IL-12p40 mutant gene of the present invention can be useful for DNA vaccination and gene therapy against various diseases, for example, AIDS, hepatitis C or hepatitis B, cancer, influenza, tuberculosis and malaria, which essentially require cellular immune responses for their therapy.

    摘要翻译： 本发明涉及能够产生具有高活性的人和小鼠来源的IL-12（白细胞介素12）的IL-12p40亚基突变基因，包括上述突变基因的表达载体及其用于DNA疫苗佐剂。 特别涉及抑制IL-12p40分泌的IL-12p40突变基因，但通常在IL-12p40的Asn-222（人）或Asn-220（小鼠））氨基酸上突变而分泌活性IL-12p70， 作为IL-12，IL-12p70活性形式的竞争性抑制剂。 因此，本发明的IL-12p40突变基因可用于针对各种疾病（例如艾滋病，丙型肝炎或乙型肝炎，癌症，流感，结核病和疟疾）的DNA疫苗接种和基因治疗，其基本上需要细胞免疫应答 为他们的治疗。

    Vertically aligned liquid crystal display
    9.
    发明申请
    Vertically aligned liquid crystal display 审中-公开
    垂直对齐的液晶显示屏

    公开(公告)号：US20070091229A1

    公开(公告)日：2007-04-26

    申请号：US11449026

    申请日：2006-06-08

    申请人： Soo Jang ,  Byoung Jeon ,  Jun Chang ,  Sang Han ,  Dong Cho ,  Sung Nam

    发明人： Soo Jang ,  Byoung Jeon ,  Jun Chang ,  Sang Han ,  Dong Cho ,  Sung Nam

    IPC分类号： G02F1/1335 ,  G02F1/1337

    CPC分类号： G02F1/133634 ,  G02B5/3033 ,  G02B5/3083 ,  G02F1/133528 ,  G02F1/1393 ,  G02F2001/133742 ,  G02F2413/12

    摘要： Disclosed herein is an integrated-type polarizer comprising a polarizing film provided with a biaxial retardation film as a protective film on a first side thereof, the polarizing film having an absorption axis perpendicular to the optical axis of the biaxial retardation film. Also is provided a vertically aligned liquid crystal display comprising a liquid crystal cell filled with liquid crystal molecules of negative dielectric anisotropy between a first and a second polarizer, the respective absorption axes of which are perpendicular to each other, wherein the integrated-type polarizer acts as the first polarizer.

    摘要翻译： 本文公开了一种集成型偏振器，其包括在其第一侧上设置有作为保护膜的双轴延迟膜的偏振膜，所述偏振膜具有与双轴延迟膜的光轴垂直的吸收轴。 还提供了一种垂直取向的液晶显示器，其包括在第一和第二偏振器之间填充有负介电各向异性的液晶分子的液晶单元，其各自的吸收轴彼此垂直，其中集成型偏振器 作为第一偏振片。

    In-plane switching liquid crystal display having simple structure
    10.
    发明申请
    In-plane switching liquid crystal display having simple structure 有权
    面内切换液晶显示器结构简单

    公开(公告)号：US20070024792A1

    公开(公告)日：2007-02-01

    申请号：US11493025

    申请日：2006-07-26

    申请人： Jun Chang ,  Byoung Jeon ,  Soo Jang

    发明人： Jun Chang ,  Byoung Jeon ,  Soo Jang

    IPC分类号： G02F1/1343

    CPC分类号： G02F1/134363 ,  G02F1/13363 ,  G02F2001/133635 ,  G02F2413/03

    摘要： An IPS-LCD, in which the direction of an optical axis and retardation values are adjusted according to the disposition of a phase retardation film replacing one protective film, obtains a contrast ratio similar to that of an IPS-LCD having upper and lower protective films, and has a small thickness. The IPS-LCD includes first and second polarizing plates (1, 2), an IPS panel (3), and a first protective film. Absorption axes (4, 5) of the first and second polarizing plates (1, 2) are orthogonal to each other, and an optical axis of a liquid crystal in the IPS panel (3) and the absorption axis (4) are parallel with each other. A second phase retardation film, obtained by coating a biaxial film (17) with a uniaxial C film (11), is disposed between the second polarizing plate (2) and the IPS panel (3) and is used as a second protective film.

    摘要翻译： 根据更换一个保护膜的相位延迟膜的配置来调整光轴方向和延迟值的IPS-LCD获得与具有上保护膜和下保护膜的IPS-LCD类似的对比度 ，厚度小。 IPS-LCD包括第一和第二偏振片（1,2），IPS面板（3）和第一保护膜。 第一和第二偏振板（1,2）的吸收轴（4,5）彼此正交，并且IPS面板（3）和吸收轴（4）中的液晶的光轴与 彼此。 通过用单轴C膜（11）涂布双轴膜（17）而获得的第二相位延迟膜设置在第二偏振片（2）和IPS面板（3）之间，并用作第二保护膜。