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1.发明申请公开(公告)号：US20170186944A1
公开(公告)日：2017-06-29
申请号：US14982986
申请日：2015-12-29
摘要： A method of making a MRAM device includes forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction; wherein the exposing of the magnetic tunnel junction to hydrogen plasma is performed at a temperature from about 150 to about 250° C. An MRAM device including an encapsulating layer comprising either silicon nitride or aluminum oxide is also provided.
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2.发明申请公开(公告)号：US20170186943A1
公开(公告)日：2017-06-29
申请号：US14982540
申请日：2015-12-29
发明人： Anthony J. Annunziata , Marinus Hopstaken , Chandrasekara Kothandaraman , JungHyuk Lee , Deborah A. Neumayer , Jeong-Heon Park
摘要： Embodiments are directed to an electromagnetic memory device having a memory cell and an encapsulation layer formed over the memory cell. The memory cell may include a magnetic tunnel junction (MTJ), and the encapsulation layer may be formed from a layer of hydrogenated amorphous silicon. Amorphous silicon improves the coercivity of the MTJ but by itself is conductive. Adding hydrogen to amorphous silicon passivates dangling bonds of the amorphous silicon, thereby reducing the ability of the resulting hydrogenated amorphous silicon layer to provide a parasitic current path to the MTJ. The hydrogenated amorphous silicon layer may be formed using a plasma-enhanced chemical vapor deposition, which can be tuned to enable a hydrogen level of approximately 10 to approximately 20 percent. By keeping subsequent processing operations at or below about 400 Celsius, the resulting layer of hydrogenated amorphous silicon can maintain its hydrogen level of approximately 10 to 20 percent.
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3.发明授权Low degradation MRAM encapsulation process using silicon-rich silicon nitride film 有权使用富硅氮化硅薄膜的低降解MRAM封装工艺公开(公告)号：US09515252B1
公开(公告)日：2016-12-06
申请号：US14983015
申请日：2015-12-29
发明人： Anthony J. Annunziata , Chandrasekaran Kothandaraman , Gen P. Lauer , JungHyuk Lee , Nathan P. Marchack , Deborah A. Neumayer , Eugene J. O'Sullivan , Jeong-Heon Park
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1677 , H01L27/22 , H01L27/222 , H01L43/02 , H01L43/12
摘要： A method of making a magnetic random access memory (MRAM) device comprising forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. An MRAM device made by the above method is also disclosed.
摘要翻译： 一种制造磁性随机存取存储器（MRAM）装置的方法，包括在电极上形成磁性隧道结，所述磁性隧道结包括第一参考层，自由层和第一隧道势垒层; 以及在所述磁性隧道结的侧壁上并沿着所述磁性隧道结的侧壁沉积封装的氮化硅膜; 其中氮化硅膜具有0.1:1的N:Si比率。还公开了通过上述方法制造的MRAM器件。
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4.发明授权公开(公告)号：US09698339B1
公开(公告)日：2017-07-04
申请号：US14982540
申请日：2015-12-29
发明人： Anthony J. Annunziata , Marinus Hopstaken , Chandrasekara Kothandaraman , JungHyuk Lee , Deborah A. Neumayer , Jeong-Heon Park
摘要： Embodiments are directed to an electromagnetic memory device having a memory cell and an encapsulation layer formed over the memory cell. The memory cell may include a magnetic tunnel junction (MTJ), and the encapsulation layer may be formed from a layer of hydrogenated amorphous silicon. Amorphous silicon improves the coercivity of the MTJ but by itself is conductive. Adding hydrogen to amorphous silicon passivates dangling bonds of the amorphous silicon, thereby reducing the ability of the resulting hydrogenated amorphous silicon layer to provide a parasitic current path to the MTJ. The hydrogenated amorphous silicon layer may be formed using a plasma-enhanced chemical vapor deposition, which can be tuned to enable a hydrogen level of approximately 10 to approximately 20 percent. By keeping subsequent processing operations at or below about 400 Celsius, the resulting layer of hydrogenated amorphous silicon can maintain its hydrogen level of approximately 10 to 20 percent.
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公开(公告)号：US10700263B2
公开(公告)日：2020-06-30
申请号：US15886232
申请日：2018-02-01
摘要： A semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate. At least one trench line is formed within the substrate. A pad layer is formed in contact with the at least one trench line. A seed layer is formed on and in contact with the pad layer. The seed layer has a Root Mean Square surface roughness equal to or less than 3 Angstroms. A magnetic tunnel junction stack is formed on and in contact with the seed layer. The method includes forming a seed layer on and in contact with a semiconductor structure. The seed layer is annealed and then planarized. A magnetic tunnel junction stack is formed on and in contact with the seed layer after the seed layer has been planarized.
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公开(公告)号：US10374152B2
公开(公告)日：2019-08-06
申请号：US15231168
申请日：2016-08-08
摘要： Magnetic tunnel junction antifuse devices are protected from degradation caused by programming voltage drop across the gates of unselected magnetic tunnel junction antifuses by connecting said magnetic tunnel junctions serially with a first field effect transistor and a second field effect transistor, the first field effect transistor having its gate connected to a positive supply voltage while the gate of the second field effect transistor is switchably connected to a programming voltage, such that when the second field effect transistor of a selected magnetic tunnel junction is switched to direct the programming voltage to program the selected magnetic tunnel junction an unswitched magnetic tunnel junction and the second field effect transistor do not experience a voltage drop across the gates thereof sufficient to degrade.
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公开(公告)号：US10109675B2
公开(公告)日：2018-10-23
申请号：US15453432
申请日：2017-03-08
摘要： A method of forming a semiconductor structure includes forming two or more pillar structures over a top surface of a substrate. The method also includes forming two or more contacts to the two or more pillar structures. The method further includes forming an insulator between the two or more pillar structures and the two or more contacts. The two or more contacts are self-aligned to the two or more pillar structures by forming the insulator via conformal deposition and etching the insulator selective to a spin-on material formed over the insulator between the two or more pillar structures.
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公开(公告)号：US20180190900A1
公开(公告)日：2018-07-05
申请号：US15906154
申请日：2018-02-27
摘要： A method of making a magnetic random access memory device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; disposing a hard mask on the MTJ; etching sidewalls of the hard mask and MTJ to form a stack with a first width and redeposit metal along the MTJ sidewall; depositing a sacrificial dielectric layer on the hard mask, surface of the electrode, exposed sidewall of the hard mask and the MTJ, and on redeposited metal along the sidewall of the MTJ; removing a portion of the sacrificial dielectric layer from sidewalls of the hard mask and MTJ and redeposited metal from the MTJ sidewalls; and removing a portion of a sidewall of the MTJ and hard mask to provide a second width to the stack; wherein the second width is less than the first width.
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公开(公告)号：US09935283B2
公开(公告)日：2018-04-03
申请号：US15235142
申请日：2016-08-12
IPC分类号： H01L51/05 , H01L29/786 , H01L29/16 , H01L29/06 , H01L21/02 , H01L21/283 , H01L29/20 , H01L29/24 , H01L21/04 , H01L51/00 , H01L21/441 , H01L29/66 , H01L29/778 , G01N27/414 , H01L43/08 , H01L49/02 , H01L23/532 , H01L21/768
CPC分类号： H01L51/0541 , G01N27/414 , G01N27/4141 , G01N27/4146 , H01L21/02527 , H01L21/0254 , H01L21/02568 , H01L21/02606 , H01L21/043 , H01L21/283 , H01L21/441 , H01L21/7682 , H01L23/53276 , H01L28/60 , H01L29/0665 , H01L29/0673 , H01L29/1606 , H01L29/2003 , H01L29/24 , H01L29/66045 , H01L29/66969 , H01L29/778 , H01L29/78684 , H01L29/78696 , H01L43/08 , H01L51/0048 , H01L51/0558 , H01L2221/1094
摘要： Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.
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公开(公告)号：US09716221B2
公开(公告)日：2017-07-25
申请号：US14950576
申请日：2015-11-24
CPC分类号： H01L43/02 , G01R33/09 , G01R33/1269 , G01R33/1276 , H01L43/08 , H01L43/12
摘要： Embodiments are directed to a sensor having a first electrode, a second electrode and a detector region electrically coupled between the first electrode region and the second electrode region. The detector region includes a first layer having a topological insulator. The topological insulator includes a conducting path along a surface of the topological insulator, and the detector region further includes a second layer having a first insulating magnetic coupler, wherein a magnetic field applied to the detector region changes a resistance of the conducting path.
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