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    MICROWAVE PLASMA REACTORS
    2.
    发明申请
    MICROWAVE PLASMA REACTORS 有权
    微波等离子体反应器

    公开(公告)号：US20140220261A1

    公开(公告)日：2014-08-07

    申请号：US14117213

    申请日：2012-05-11

    Applicant: Jes Asmussen ,  Yajun Gu ,  Timothy A. Grotjohn

    Inventor： Jes Asmussen ,  Yajun Gu ,  Timothy A. Grotjohn

    IPC: C23C16/517 ,  H01J37/32 ,  C30B25/10

    CPC classification number: C23C16/517 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J37/32807 ,  H01J2237/32

    Abstract: Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.

    Abstract translation: 公开了微波等离子体辅助反应器，例如化学气相沉积（MPCVD）反应器。 所公开的反应器在高压（> 180-320乇）和高功率密度（> 150W / cm 3）下工作，从而实现快速沉积材料的高沉积速率CVD工艺。 特别地，描述了反应器设计实例，当在180-320乇压力范围内操作时，快速CVD合成高质量多晶（PCD）和单晶金刚石（SCD）。 改进的反应器包括在主微波室中等离子体室附近的径向收缩（以及可选地在电磁波源附近的组合膨胀，随后是收缩），因为电磁能量从电磁波源传播到 等离子体/沉积室。

    N-DOPED SINGLE CRYSTAL DIAMOND SUBSTRATES AND METHODS THEREFOR
    3.
    发明申请
    N-DOPED SINGLE CRYSTAL DIAMOND SUBSTRATES AND METHODS THEREFOR 有权
    N-DOPED单晶金刚石基板及其方法

    公开(公告)号：US20130153931A1

    公开(公告)日：2013-06-20

    申请号：US13819948

    申请日：2011-08-31

    Applicant: Timothy A. Grotjohn ,  Jes Asmussen ,  Timothy Hogan

    Inventor： Timothy A. Grotjohn ,  Jes Asmussen ,  Timothy Hogan

    IPC: H01L29/06

    CPC classification number: H01L29/0657 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/3065 ,  H01L29/1602

    Abstract: The disclosure relates to the formation of n-doped single crystal diamond (SCD). In general, a SCD substrate is preferentially anisotropically etched to provide one or more recesses in the SCD substrate, where the recesses are defined by (1 1 1) surface sidewalls resulting from the preferential anisotropic etching process. The recesses generally have a pyramidal shape. N-type doped SCD (e.g., using a phosphorous dopant) is then deposited into the preferentially anisotropically etched recesses. When the SCD substrate is a p-type diamond (e.g., using a boron dopant), the resulting structure can be used as a p-n junction, for example for use in various power electronic apparatus such as diodes, etc.

    Abstract translation: 本公开涉及形成n掺杂单晶金刚石（SCD）。 通常，SCD衬底被优先各向异性蚀刻以在SCD衬底中提供一个或多个凹槽，其中凹陷由优先各向异性蚀刻工艺产生的（111）表面侧壁限定。 凹槽通常具有金字塔形状。 然后将N型掺杂的SCD（例如，使用磷掺杂剂）沉积到优先各向异性蚀刻的凹槽中。 当SCD衬底是p型金刚石（例如，使用硼掺杂剂）时，所得到的结构可以用作p-n结，例如用于各种电力电子设备例如二极管等。

    N-doped single crystal diamond substrates and methods therefor
    4.
    发明授权
    N-doped single crystal diamond substrates and methods therefor 有权
    N掺杂单晶金刚石基底及其方法

    公开(公告)号：US09166002B2

    公开(公告)日：2015-10-20

    申请号：US13819948

    申请日：2011-08-31

    Applicant: Timothy A. Grotjohn ,  Jes Asmussen ,  Timothy Hogan

    Inventor： Timothy A. Grotjohn ,  Jes Asmussen ,  Timothy Hogan

    IPC: H01L29/06 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/16

    CPC classification number: H01L29/0657 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/3065 ,  H01L29/1602

    Abstract: The disclosure relates to the formation of n-doped single crystal diamond (SCD). In general, a SCD substrate is preferentially anisotropically etched to provide one or more recesses in the SCD substrate, where the recesses are defined by (1 1 1) surface sidewalls resulting from the preferential anisotropic etching process. The recesses generally have a pyramidal shape. N-type doped SCD (e.g., using a phosphorous dopant) is then deposited into the preferentially anisotropically etched recesses. When the SCD substrate is a p-type diamond (e.g., using a boron dopant), the resulting structure can be used as a p-n junction, for example for use in various power electronic apparatus such as diodes, etc.

    Abstract translation: 本公开涉及形成n掺杂单晶金刚石（SCD）。 通常，SCD衬底被优先各向异性蚀刻以在SCD衬底中提供一个或多个凹槽，其中凹陷由优先各向异性蚀刻工艺产生的（111）表面侧壁限定。 凹槽通常具有金字塔形状。 然后将N型掺杂的SCD（例如，使用磷掺杂剂）沉积到优先各向异性蚀刻的凹槽中。 当SCD衬底是p型金刚石（例如，使用硼掺杂剂）时，所得到的结构可以用作p-n结，例如用于各种电力电子设备例如二极管等。

    Microwave stripline applicators
    6.
    发明授权
    Microwave stripline applicators 有权
    微波带状电缆

    公开(公告)号：US06759808B2

    公开(公告)日：2004-07-06

    申请号：US10280142

    申请日：2002-10-25

    Applicant: Timothy A. Grotjohn ,  Jes Asmussen ,  Andy Wijaya

    Inventor： Timothy A. Grotjohn ,  Jes Asmussen ,  Andy Wijaya

    IPC: H01J724

    CPC classification number: H05H1/46 ,  H05H2001/4622

    Abstract: An apparatus and method which maintains plasma discharges (for instance 25) in containers (for instance 20) which have an internal section of 1 cm or less in width are described. The very small cross-section plasma discharges are useful in MEMS devices, in spectrometers and in spectroscopy.

    Abstract translation: 描述了将容器（例如20）中的等离子体放电（例如25）保持在宽度为1cm或更小的内部部分的装置和方法。 非常小的横截面等离子体放电在MEMS器件，光谱仪和光谱学中是有用的。

    Multicolored single crystal diamond gemstones and methods for forming the same
    7.
    发明授权
    Multicolored single crystal diamond gemstones and methods for forming the same 有权
    多彩多姿的单晶钻石宝石及其形成方法

    公开(公告)号：US09277792B2

    公开(公告)日：2016-03-08

    申请号：US13215326

    申请日：2011-08-23

    Applicant: Timothy A. Grotjohn ,  Carolyn Randall

    Inventor： Timothy A. Grotjohn ,  Carolyn Randall

    IPC: C30B25/04 ,  A44C17/00 ,  C30B25/10 ,  C30B29/04 ,  C30B33/00

    CPC classification number: A44C17/003 ,  C30B25/105 ,  C30B29/04 ,  C30B33/00

    Abstract: The disclosure relates to the inclusion of an image embedded in or on a single crystal diamond such that the image is part of the single crystal diamond structure. The disclosed methods use a combination of gemstone deposition processes and patterning processes to create single crystal gemstones with embedded color variations that can create externally visible two-dimensional or three-dimensional images in a seamless single crystal matrix without visible internal lines/interfacial boundaries. The image embedded image is differently colored from the surrounding diamond matrix. The color variation is accomplished by a change in the diamond growth conditions or treatment of the diamond.

    Abstract translation: 本公开涉及包含嵌入在单晶金刚石中或其上的图像，使得图像是单晶金刚石结构的一部分。 所公开的方法使用宝石沉积工艺和图案化工艺的组合来产生具有嵌入颜色变化的单晶宝石，其可以在无可见内部线/界面边界的无缝单晶矩阵中创建外部可见的二维或三维图像。 图像嵌入图像与周围的菱形矩阵不同的颜色。 颜色变化是通过金刚石生长条件的变化或金刚石的处理来实现的。

    SINGLE CRYSTAL DIAMOND GEMSTONES AND METHODS THEREFOR
    8.
    发明申请
    SINGLE CRYSTAL DIAMOND GEMSTONES AND METHODS THEREFOR 有权
    单晶钻石GEMSTONES及其方法

    公开(公告)号：US20120047950A1

    公开(公告)日：2012-03-01

    申请号：US13215326

    申请日：2011-08-23

    Applicant: Timothy A. Grotjohn ,  Carolyn Randall

    Inventor： Timothy A. Grotjohn ,  Carolyn Randall

    IPC: A44C17/00 ,  B28D5/00

    CPC classification number: A44C17/003 ,  C30B25/105 ,  C30B29/04 ,  C30B33/00

    Abstract: The disclosure relates to the inclusion of an image embedded in or on a single crystal diamond such that the image is part of the single crystal diamond structure. The disclosed methods use a combination of gemstone deposition processes and patterning processes to create single crystal gemstones with embedded color variations that can create externally visible two-dimensional or three-dimensional images in a seamless single crystal matrix without visible internal lines/interfacial boundaries. The image embedded image is differently colored from the surrounding diamond matrix. The color variation is accomplished by a change in the diamond growth conditions or treatment of the diamond.

    Abstract translation: 本公开涉及包含嵌入在单晶金刚石中或其上的图像，使得图像是单晶金刚石结构的一部分。 所公开的方法使用宝石沉积工艺和图案化工艺的组合来产生具有嵌入颜色变化的单晶宝石，其可以在无可见内部线/界面边界的无缝单晶矩阵中创建外部可见的二维或三维图像。 图像嵌入图像与周围的菱形矩阵不同的颜色。 颜色变化是通过金刚石生长条件的变化或金刚石的处理来实现的。

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