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    COBALT DEPOSITION ON BARRIER SURFACES
    2.
    发明申请
    COBALT DEPOSITION ON BARRIER SURFACES 有权
    铜棒沉积在阻挡层表面上

    公开(公告)号：US20090053426A1

    公开(公告)日：2009-02-26

    申请号：US12201976

    申请日：2008-08-29

    申请人： JIANG LU ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

    发明人： JIANG LU ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

    IPC分类号： B05D5/12 ,  B05D3/06

    CPC分类号： H01L21/76871 ,  C23C16/16 ,  C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

    摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

    摘要翻译： 本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。 在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层 工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。 在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

    Method for tuning a deposition rate during an atomic layer deposition process
    3.
    发明授权
    Method for tuning a deposition rate during an atomic layer deposition process 有权
    在原子层沉积过程中调整沉积速率的方法

    公开(公告)号：US09418890B2

    公开(公告)日：2016-08-16

    申请号：US14279260

    申请日：2014-05-15

    申请人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    发明人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    IPC分类号： H01L21/768 ,  C23C16/455 ,  C23C16/52

    CPC分类号： H01L21/76841 ,  C23C16/45534 ,  C23C16/52

    摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

    摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。

    METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS
    4.
    发明申请
    METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS 审中-公开
    在原子层沉积过程中调节沉积速率的方法

    公开(公告)号：US20100062149A1

    公开(公告)日：2010-03-11

    申请号：US12465471

    申请日：2009-05-13

    申请人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    发明人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    IPC分类号： B05D5/12

    CPC分类号： H01L21/76841 ,  C23C16/45534 ,  C23C16/52

    摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

    摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。

    Chemical delivery apparatus for CVD or ALD
    5.
    发明授权
    Chemical delivery apparatus for CVD or ALD 有权
    用于CVD或ALD的化学输送装置

    公开(公告)号：US07832432B2

    公开(公告)日：2010-11-16

    申请号：US12500319

    申请日：2009-07-09

    申请人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

    发明人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

    IPC分类号： F16K3/36 ,  F16K11/20

    CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

    摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.

    摘要翻译： 本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。 在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热 层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线 在入口管线和出口管线之间。 在一些实施例中，安瓿组件可以包含断开配件。 在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。

    Chemical delivery apparatus for CVD or ALD
    7.
    发明授权
    Chemical delivery apparatus for CVD or ALD 有权
    用于CVD或ALD的化学输送装置

    公开(公告)号：US07748400B2

    公开(公告)日：2010-07-06

    申请号：US12500314

    申请日：2009-07-09

    申请人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

    发明人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

    IPC分类号： F16K3/36 ,  F16K11/20

    CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

    摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.

    摘要翻译： 实施例涉及包含旁路管线和阀门的安瓿组件。 在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。 安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀 旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一个截止阀，以及另一截止阀，其设置在安瓿主体和 断开出口管路上的接头。

    ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS
    8.
    发明申请
    ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS 审中-公开
    原子材料的原子层沉积工艺

    公开(公告)号：US20070077750A1

    公开(公告)日：2007-04-05

    申请号：US11470473

    申请日：2006-09-06

    申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

    发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

    IPC分类号： H01L21/4763 ,  H01L21/00

    CPC分类号： H01L21/28562 ,  C23C16/045 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/76843 ,  H01L21/76873 ,  H01L2221/1089

    摘要： Embodiments of the invention provide a method for depositing ruthenium materials on a substrate by various vapor deposition processes, such as atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD). In one aspect, the process has little or no initiation delay and maintains a fast deposition rate while forming a ruthenium material. The ruthenium material may be deposited with good step coverage, strong adhesion, and contains a low carbon concentration for high electrical conductivity. The method for depositing the ruthenium material on a substrate generally includes sequentially exposing the substrate to a pyrrolyl ruthenium precursor and a reagent during the ALD process. The pyrrolyl ruthenium precursor contains ruthenium and at least one pyrrolyl ligand. In some examples, the reagent may contain a plasma of ammonia, nitrogen, or hydrogen during a PE-ALD process. In other examples, a reducing gas may be used during a thermal ALD process.

    摘要翻译： 本发明的实施方案提供了一种通过诸如原子层沉积（ALD）和等离子体增强型ALD（PE-ALD）之类的各种气相沉积工艺在基片上沉积钌材料的方法。 在一个方面，该方法很少或没有引发延迟并且在形成钌材料时保持快速的沉积速率。 钌材料可以以良好的阶梯覆盖，强粘附性沉积，并且包含低碳浓度用于高电导率。 用于在基底上沉积钌材料的方法通常包括在ALD工艺期间将衬底顺序地暴露于吡咯基钌前体和试剂。 吡咯钌前体含有钌和至少一个吡咯基配体。 在一些实例中，在PE-ALD工艺期间，试剂可以含有氨，氮或氢的等离子体。 在其他实例中，在热ALD工艺期间可以使用还原气体。

    CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD
    10.
    发明申请
    CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD 有权
    化学输送装置用于CVD或ALD

    公开(公告)号：US20090314370A1

    公开(公告)日：2009-12-24

    申请号：US12500314

    申请日：2009-07-09

    申请人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

    发明人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

    IPC分类号： F16K21/00

    CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

    摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.

    摘要翻译： 实施例涉及包含旁路管线和阀门的安瓿组件。 在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。 安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀 旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一截止阀，以及设置在安瓿主体和 断开出口管路上的接头。