公开(公告)号：US09418890B2

公开(公告)日：2016-08-16

申请号：US14279260

申请日：2014-05-15

申请人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

发明人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

IPC分类号： H01L21/768 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/76841 ,  C23C16/45534 ,  C23C16/52

摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。

公开(公告)号：US20100062149A1

公开(公告)日：2010-03-11

申请号：US12465471

申请日：2009-05-13

申请人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

发明人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

IPC分类号： B05D5/12

CPC分类号： H01L21/76841 ,  C23C16/45534 ,  C23C16/52

摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。

公开(公告)号：US09051641B2

公开(公告)日：2015-06-09

申请号：US12201976

申请日：2008-08-29

申请人： Jiang Lu ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

发明人： Jiang Lu ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

IPC分类号： B05D5/12 ,  C23C16/16 ,  C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76871 ,  C23C16/16 ,  C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

摘要翻译： 本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。 在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层 工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。 在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

公开(公告)号：US20090053426A1

公开(公告)日：2009-02-26

申请号：US12201976

申请日：2008-08-29

申请人： JIANG LU ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

发明人： JIANG LU ,  Hyoung-Chan Ha ,  Paul Ma ,  Seshadri Ganguli ,  Joseph F. Aubuchon ,  Sang Ho Yu ,  Murali K. Narasimhan

IPC分类号： B05D5/12 ,  B05D3/06

CPC分类号： H01L21/76871 ,  C23C16/16 ,  C23C16/18 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

摘要翻译： 本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。 在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层 工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。 在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

公开(公告)号：US07833358B2

公开(公告)日：2010-11-16

申请号：US11400663

申请日：2006-04-07

申请人： Schubert S. Chu ,  Frederick C. Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

发明人： Schubert S. Chu ,  Frederick C. Wu ,  Christophe Marcadal ,  Seshadri Ganguli ,  Dien-Yeh Wu ,  Kavita Shah ,  Paul Ma

IPC分类号： B08B7/00 ,  B08B9/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  Y02C20/30 ,  Y10S438/905

摘要： A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.

摘要翻译： 通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在 处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。 结合钌浓度的等离子体阻抗的测量提供了室清洁度的精确指示。

公开(公告)号：US07748400B2

公开(公告)日：2010-07-06

申请号：US12500314

申请日：2009-07-09

申请人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

发明人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

IPC分类号： F16K3/36 ,  F16K11/20

CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.

摘要翻译： 实施例涉及包含旁路管线和阀门的安瓿组件。 在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。 安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀 旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一个截止阀，以及另一截止阀，其设置在安瓿主体和 断开出口管路上的接头。

公开(公告)号：US20080102203A1

公开(公告)日：2008-05-01

申请号：US11923590

申请日：2007-10-24

申请人： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

发明人： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven Kim ,  Schubert Chu ,  Paul Ma ,  Joseph Aubuchon

IPC分类号： C23C16/44

CPC分类号： C23C16/4404 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel at a central portion of the chamber lid assembly, wherein an upper portion of the expanding channel extends substantially parallel along a central axis of the expanding channel, and an expanding portion of the expanding channel tapers away from the central axis. The chamber lid assembly further contains a conduit coupled to a gas inlet, another conduit coupled to another gas inlet, and both gas inlets are positioned to provide a circular gas flow through the expanding channel. In one example, the inner surface within the upper portion of the expanding channel has a lower mean surface roughness than the inner surface within the expanding portion of the expanding channel.

摘要翻译： 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中，提供了一种用于处理衬底的腔室，其包括在室盖组件的中心部分处包含扩张通道的腔室盖组件，其中，扩张通道的上部沿着扩张通道的中心轴线大致平行延伸 并且扩张槽的膨胀部分从中心轴线逐渐变细。 腔室盖组件还包括连接到气体入口的导管，另一导管与另一个气体入口连接，两个气体入口被定位成提供通过扩张通道的圆形气流。 在一个示例中，扩展通道的上部内的内表面的平均表面粗糙度低于膨胀通道的膨胀部分内的内表面。

公开(公告)号：US20070077750A1

公开(公告)日：2007-04-05

申请号：US11470473

申请日：2006-09-06

申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

IPC分类号： H01L21/4763 ,  H01L21/00

CPC分类号： H01L21/28562 ,  C23C16/045 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/76843 ,  H01L21/76873 ,  H01L2221/1089

摘要： Embodiments of the invention provide a method for depositing ruthenium materials on a substrate by various vapor deposition processes, such as atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD). In one aspect, the process has little or no initiation delay and maintains a fast deposition rate while forming a ruthenium material. The ruthenium material may be deposited with good step coverage, strong adhesion, and contains a low carbon concentration for high electrical conductivity. The method for depositing the ruthenium material on a substrate generally includes sequentially exposing the substrate to a pyrrolyl ruthenium precursor and a reagent during the ALD process. The pyrrolyl ruthenium precursor contains ruthenium and at least one pyrrolyl ligand. In some examples, the reagent may contain a plasma of ammonia, nitrogen, or hydrogen during a PE-ALD process. In other examples, a reducing gas may be used during a thermal ALD process.

摘要翻译： 本发明的实施方案提供了一种通过诸如原子层沉积（ALD）和等离子体增强型ALD（PE-ALD）之类的各种气相沉积工艺在基片上沉积钌材料的方法。 在一个方面，该方法很少或没有引发延迟并且在形成钌材料时保持快速的沉积速率。 钌材料可以以良好的阶梯覆盖，强粘附性沉积，并且包含低碳浓度用于高电导率。 用于在基底上沉积钌材料的方法通常包括在ALD工艺期间将衬底顺序地暴露于吡咯基钌前体和试剂。 吡咯钌前体含有钌和至少一个吡咯基配体。 在一些实例中，在PE-ALD工艺期间，试剂可以含有氨，氮或氢的等离子体。 在其他实例中，在热ALD工艺期间可以使用还原气体。

公开(公告)号：US20060003438A1

公开(公告)日：2006-01-05

申请号：US11155453

申请日：2005-06-17

申请人： James Engstrom ,  Aravind Killampalli ,  Paul Ma

发明人： James Engstrom ,  Aravind Killampalli ,  Paul Ma

IPC分类号： C12M1/34 ,  B05D1/36

CPC分类号： H01L21/02172 ,  B05D1/185 ,  B05D1/60 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02205 ,  H01L21/31604 ,  H01L51/56

摘要： Systems and methods for preparing inorganic-organic interfaces using organo-transition metal complexes and self-assembled monolayers as organic surfaces. In one embodiment, a silicon wafer is cleaned and reacted with stabilized pirhana etch to provide an oxide surface. The surface is reacted with the trichlorosilyl end of alkyltrichlorosilanes to prepare self assembling monomers (SAMs). The alkyltrichlorosilanes have the general formula R1-R—SiCl3, where R1 is —OH, —NH2, —COOH, —SH, COOCH3, —CN, and R is a conjugated hydrocarbon, such as (CH2)n where n is in the range of 3 to 18. The functionalized end of the SAM can optionally modified chemically as appropriate, and is then reacted with metal-bearing species such as tetrakis(dimethylamido)titanium, Ti[N(CH3)2]4, (TDMAT) to provide a titanium nitride layer.

摘要翻译： 使用有机过渡金属络合物和自组装单层作为有机表面制备无机 - 有机界面的系统和方法。 在一个实施例中，清洁硅晶片并与稳定的pirhana蚀刻反应以提供氧化物表面。 表面与烷基三氯硅烷的三氯甲硅烷基末端反应以制备自组装单体（SAM）。 烷基三氯硅烷具有通式R 1 -R 3 -SiCl 3，其中R 1是-OH，-NH 2，-COOH，-SH，COOCH 3， SUB，-CN和R是共轭烃，例如（CH 2）n N，其中n在3至18的范围内。SAM的官能化端可以任选地适当地化学改性， 然后与含金属的物质如四（二甲基氨基）钛，Ti [N（CH 3）2）2]，（ TDMAT）以提供氮化钛层。

公开(公告)号：US07832432B2

公开(公告)日：2010-11-16

申请号：US12500319

申请日：2009-07-09

申请人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

发明人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

IPC分类号： F16K3/36 ,  F16K11/20

CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.

摘要翻译： 本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。 在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热 层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线 在入口管线和出口管线之间。 在一些实施例中，安瓿组件可以包含断开配件。 在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。