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    Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
    1.
    发明申请
    Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides 有权
    Ti，Ta，Hf，Zr和金属硅氮化物的ALD / CVD的相关金属硅酰胺，氧化物或氮氧化物

    公开(公告)号：US20070082500A1

    公开(公告)日：2007-04-12

    申请号：US11522768

    申请日：2006-09-18

    申请人： John Norman ,  Xinjian Lei

    发明人： John Norman ,  Xinjian Lei

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： C07F11/005 ,  C07F7/003 ,  C07F9/005

    摘要： An organometallic complex represented by the structure: wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl with the additional provision that when R1 and R2 are dialkylamide, difluoralkylamide, alkoxy, fluoroalkyl and alkoxy, they can be connected to form a ring. Related compounds are also disclosed. CVD and ALD deposition processes using the complexes are also included.

    摘要翻译： 由以下结构表示的有机金属络合物：其中M是选自元素周期表第4族的金属和R 1〜4，可以相同或不同，选自二烷基酰胺，二氟烷基酰胺 ，氢，烷基，烷氧基，氟烷基和烷氧基，脂环族和芳基，另外条件是当R 1和R 2是二烷基酰胺，二氟烷基酰胺，烷氧基，氟代烷基和烷氧基 ，它们可以连接形成环。 还公开了相关化合物。 还包括使用复合物的CVD和ALD沉积方法。

    Organoaminosilane precursors and methods for depositing films comprising same
    6.
    发明授权
    Organoaminosilane precursors and methods for depositing films comprising same 有权
    有机氨基硅烷前体及其制备方法

    公开(公告)号：US08912353B2

    公开(公告)日：2014-12-16

    申请号：US13114287

    申请日：2011-05-24

    申请人： Manchao Xiao ,  Mark Leonard O'Neill ,  Heather Regina Bowen ,  Hansong Cheng ,  Xinjian Lei

    发明人： Manchao Xiao ,  Mark Leonard O'Neill ,  Heather Regina Bowen ,  Hansong Cheng ,  Xinjian Lei

    IPC分类号： C07F7/02 ,  C23C16/34 ,  C23C16/40

    CPC分类号： C07F7/025 ,  C23C16/345 ,  C23C16/401

    摘要： Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.

    摘要翻译： 这里描述的是形成介电膜的前体和方法。 一方面，提供了具有下式I的硅前体：其中R 1独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基 C1-C6烷氧基，C1-C6二烷基氨基和吸电子基，n是选自0,1,2,3,4和5的数; R 2独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基，C 1至C 6烷氧基，C 1至C 6二烷基氨基，C 6至 C 10芳基，直链或支链C 1至C 6氟化烷基和C 4至C 10环烷基。

    Method for preparing metal complexes of polydentate beta-ketoiminates
    7.
    发明授权
    Method for preparing metal complexes of polydentate beta-ketoiminates 有权
    制备多齿β-酮基亚胺的金属络合物的方法

    公开(公告)号：US08722933B2

    公开(公告)日：2014-05-13

    申请号：US12702655

    申请日：2010-02-09

    申请人： Xinjian Lei ,  Daniel P. Spence

    发明人： Xinjian Lei ,  Daniel P. Spence

    IPC分类号： C07C249/00 ,  C07C251/00

    CPC分类号： C07C221/00 ,  C07C225/04

    摘要： A method for making a group 2 metal-containing polydentate β-ketoiminate represented by the following structure A: wherein M is a metal selected from the group consisting of Mg, Ca, Sr, and Ba; R1, R3, R5, and R6 are independently selected from an alkyl group, a fluoroalkyl group, a cycloaliphatic group, and an aryl group; R2 is selected from a hydrogen atom, an alkyl group, an alkoxy group, a cycloaliphatic group, and an aryl group; and R4 is an alkyenyl bridge, comprising: reacting M in a reaction mixture comprising a tridentate ketoimine ligand and an alcohol comprising at least one selected from the group consisting of R7OH and (OH)nR8 wherein R7 and R8 are independently selected from an alkyl group and an aryl group. In certain embodiments, the reaction mixture further comprises an organic solvent.

    摘要翻译： 一种由以下结构A表示的含2族金属的多金属和酮基的方法：其中M是选自Mg，Ca，Sr和Ba的金属; R 1，R 3，R 5和R 6独立地选自烷基，氟烷基，脂环族基和芳基; R2选自氢原子，烷基，烷氧基，脂环族基和芳基; 并且R 4是烷基桥，其包括：在包含三齿酮亚胺配体和包含选自由R7OH和（OH）nR8组成的组中的至少一种的醇的反应混合物中使M反应，其中R 7和R 8独立地选自烷基 和芳基。 在某些实施方案中，反应混合物还包含有机溶剂。

    Process for producing silicon and oxide films from organoaminosilane precursors
    9.
    发明授权
    Process for producing silicon and oxide films from organoaminosilane precursors 有权
    用于从有机氨基硅烷前体制备硅和氧化膜的方法

    公开(公告)号：US08530361B2

    公开(公告)日：2013-09-10

    申请号：US12976041

    申请日：2010-12-22

    申请人： Manchao Xiao ,  Xinjian Lei ,  Heather Regina Bowen ,  Mark Leonard O'Neill

    发明人： Manchao Xiao ,  Xinjian Lei ,  Heather Regina Bowen ,  Mark Leonard O'Neill

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02211 ,  C07F7/025 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633

    摘要： A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2)n chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.

    摘要翻译： 本文描述了使用有机氨基硅烷在基板上沉积含硅膜的方法。 有机基氨基硅烷由下式表示：其中R选自具有或不具有取代基的C1-C10直链，支链或环状饱和或不饱和的烷基; 具有或不具有取代基的C 5 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基或具有或不具有取代基的式C中的甲硅烷基，其选自C 3 -C 10直链，支链，环状，饱和或 有或没有取代基的不饱和烷基; 具有或不具有取代基的C 6 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基，氢原子，具有取代基的甲硅烷基，并且其中式A中的R和R可以组合成环状基团，并且R 2表示 单键，（CH 2）n链，环，C 3 -C 10支链烷基，SiR 2或SiH 2。

    Group IV Metal Complexes For Metal-Containing Film Deposition
    10.
    发明申请
    Group IV Metal Complexes For Metal-Containing Film Deposition 有权
    用于含金属膜沉积的IV族金属络合物

    公开(公告)号：US20130030191A1

    公开(公告)日：2013-01-31

    申请号：US13362077

    申请日：2012-01-31

    申请人： Wade Hampton Bailey, III ,  Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Moo-Sung Kim

    发明人： Wade Hampton Bailey, III ,  Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Moo-Sung Kim

    IPC分类号： C07F7/00 ,  C23C16/22 ,  C07F7/28

    CPC分类号： C23C16/45553 ,  C07F7/003 ,  C23C16/405

    摘要： Metal-containing complexes with general formula (1) (R1nPyr)(R2nPyr)ML1L2; or (2) [(R8XR9)(R1nPyr)(R2nPyr)]ML1L2 are disclosed; wherein M is a Group IV metal, Pyr is pyrrolyl ligand, n=1, 2 and 3, L1 and L2 are independently selected from alkoxide, amide or alkyl, L1 and L2 can be linked together, R1 and R2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and are selected from the group consisting of linear and branched C1-6 alkyls, Wand R9 are independently selected from the linear or branched chain alkylene group having 2-6 carbon atoms, and X is CH2 or oxygen. Methods of using the metal complexes as precursors to deposit metal or metal oxide films used for various devices in semi-conductor industries are also discussed.

    摘要翻译： 含有通式（1）（R1nPyr）（R2nPyr）的金属络合物ML1L2; 或（2）[（R8XR9）（R1nPyr）（R2nPyr）] ML1L2; 其中M是第IV族金属，Pyr是吡咯基配体，n = 1,2和3，L1和L2独立地选自烷氧基，酰胺或烷基，L1和L2可以连接在一起，R1和R2可以相同或不同 在吡咯环的2,3,4位被取代的有机基团，并且选自直链和支链C 1-6烷基，W 9和R 9独立地选自具有2-6个碳原子的直链或支链亚烷基 ，X为CH 2或氧。 还讨论了使用金属络合物作为前体沉积用于半导体工业中各种器件的金属或金属氧化物膜的方法。