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公开(公告)号：US06992334B1
公开(公告)日：2006-01-31
申请号：US09469652
申请日：1999-12-22
IPC分类号： H01L33/00
CPC分类号： H01L33/405
摘要： A high performance, highly reflective ohmic contact, in the visible spectrum (400 nm–750 nm), has the following multi-layer metal profile. A uniform and thin ohmic contact material is deposited and optionally alloyed to the semiconductor surface. A thick reflector layer selected from a group that includes Al, Cu, Au, Rh, Pd, Ag and any multi-layer combinations is deposited over the ohmic contact material.
摘要翻译： 在可见光谱（400nm-750nm）中的高性能，高反射欧姆接触具有以下多层金属分布。 均匀且薄的欧姆接触材料被沉积并任选地与半导体表面合金化。 选自包括Al，Cu，Au，Rh，Pd，Ag以及任何多层组合的组的厚反射层沉积在欧姆接触材料上。
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公开(公告)号：US07442965B2
公开(公告)日：2008-10-28
申请号：US11373636
申请日：2006-03-09
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。
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公开(公告)号：US07804100B2
公开(公告)日：2010-09-28
申请号：US11080022
申请日：2005-03-14
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
摘要翻译： 器件结构包括设置在p型区域和n型区域之间的III族氮化物纤锌矿半导体发光区域。 键合界面设置在两个表面之间，其中一个表面是器件结构的表面。 结合界面有利于限制发光区域中的载流子的发光区域中的纤锌矿c轴的取向，在高电流密度下潜在地提高效率。
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公开(公告)号：US07675084B2
公开(公告)日：2010-03-09
申请号：US12259120
申请日：2008-10-27
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的n型区域中形成光子晶体，并且有助于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。
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公开(公告)号：US07279718B2
公开(公告)日：2007-10-09
申请号：US10059588
申请日：2002-01-28
IPC分类号： H01L33/00 , H01L33/001 , H01L33/054 , H01L33/077
CPC分类号： H01L33/20 , H01L33/08 , H01L2224/48091 , H01L2933/0083 , Y10S438/943 , H01L2924/00014
摘要： A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.
摘要翻译： 提供了一种光子晶体发光二极管（“PXLED”）。 PXLED包括在LED的半导体层中形成的诸如孔格的周期性结构。 周期性结构的参数使得由PXLED发射的光子的能量靠近周期性结构的带结构的带边。 金属电极层对PXLED的效率有很大的影响。 此外，由GaN形成的PXLED具有低表面复合速度，因此具有高效率。 PXLED由新颖的制造技术形成，例如在图案化掩模层上的外延横向过度生长技术，产生具有低缺陷密度的半导体层。 将PXLED反转以露出掩模层的图案或使用Talbot效应创建对准的第二图案化掩模层允许形成具有低缺陷密度的PXLED。
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6.发明授权Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal 有权通过生长衬底去除制造的谐振腔III族氮化物发光器件公开(公告)号：US06956246B1
公开(公告)日：2005-10-18
申请号：US10861745
申请日：2004-06-03
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.
摘要翻译： 半导体发光器件包括n型区域，p型区域和设置在n型区域和p型区域之间的发光区域。 n型，p型和发光区形成具有顶表面和底表面的空腔。 空腔的顶表面和底表面都可以具有粗糙的表面。 例如，表面可以具有由多个谷分隔的多个峰。 在一些实施例中，通过将蚀刻停止层并入该器件中，使空腔的厚度保持恒定，然后通过终止于蚀刻停止层上的工艺使器件的层变薄。
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7.发明授权III-Nitride Light-emitting device with increased light generating capability 有权III型氮化物具有增加的发光能力的发光装置公开(公告)号：US06521914B2
公开(公告)日：2003-02-18
申请号：US10112175
申请日：2002-03-29
申请人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
发明人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
IPC分类号： H01L29267
CPC分类号： H01L33/62 , G09G2360/148 , H01L25/167 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05572 , H01L2224/14 , H01L2924/0002 , H01L2924/00
摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
摘要翻译： 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。
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公开(公告)号：US09000450B2
公开(公告)日：2015-04-07
申请号：US13404369
申请日：2012-02-24
IPC分类号： H01L27/15 , C30B29/60 , B82Y20/00 , G02B6/122 , H01L33/24 , H01L33/08 , H01S5/10 , H01S5/343
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
摘要翻译： 光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。
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9.发明授权公开(公告)号：US07808011B2
公开(公告)日：2010-10-05
申请号：US10805424
申请日：2004-03-19
IPC分类号： H01L33/00
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。
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公开(公告)号：US06995389B2
公开(公告)日：2006-02-07
申请号：US10465775
申请日：2003-06-18
申请人： James C. Kim , Nathan F. Gardner , Michael R. Krames , Yu-Chen Shen , Troy A. Trottier , Jonathan J. Wierer, Jr.
发明人： James C. Kim , Nathan F. Gardner , Michael R. Krames , Yu-Chen Shen , Troy A. Trottier , Jonathan J. Wierer, Jr.
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/3425 , H01S5/343 , H01S5/34333 , H01S5/34346
摘要： Heterostructure designs are disclosed that may increase the number of charge carriers available in the quantum well layers of the active region of III-nitride light emitting devices such as light emitting diodes. In a first embodiment, a reservoir layer is included with a barrier layer and quantum well layer in the active region of a light emitting device. In some embodiments, the reservoir layer is thicker than the barrier layer and quantum well layer, and has a greater indium composition than the barrier layer and a smaller indium composition than the quantum well layer. In some embodiments, the reservoir layer is graded. In a second embodiment, the active region of a light emitting device is a superlattice of alternating quantum well layers and barrier layers. In some embodiments, the barrier layers are thin such that charge carriers can tunnel between quantum well layers through a barrier layer.
摘要翻译： 公开了异质结构设计，其可以增加III族氮化物发光器件（例如发光二极管）的有源区的量子阱层中可用的电荷载体的数量。 在第一实施例中，存储层包括在发光器件的有源区中的势垒层和量子阱层。 在一些实施例中，储存层比阻挡层和量子阱层厚，并且具有比阻挡层更大的铟组成和比量子阱层更小的铟组成。 在一些实施例中，储层被分级。 在第二实施例中，发光器件的有源区是交替的量子阱层和阻挡层的超晶格。 在一些实施例中，阻挡层是薄的，使得电荷载流子可以通过势垒层在量子阱层之间隧穿。
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