公开(公告)号：US20100305884A1

公开(公告)日：2010-12-02

申请号：US12781353

申请日：2010-05-17

申请人： Joseph Yudovsky ,  Jeffrey Tobin ,  Patricia M. Liu ,  Faruk Gungor ,  Tai T. Ngo ,  Travis Tesch ,  Kenric Choi

发明人： Joseph Yudovsky ,  Jeffrey Tobin ,  Patricia M. Liu ,  Faruk Gungor ,  Tai T. Ngo ,  Travis Tesch ,  Kenric Choi

IPC分类号： G01N7/00

CPC分类号： C23C16/4481

摘要： Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.

摘要翻译： 本文提供了确定安瓿中前体的量的方法。 在一些实施方案中，用于测定安瓿中的固体前体的量的方法可包括确定具有部分填充有固体前体的第一体积的安瓿中的第一压力; 将一定量的第一气体流入安瓿中以在安瓿中建立第二压力; 基于第一压力，第二压力和流入安瓿的第一气体的量之间的关系来确定第一容积的剩余部分; 并且基于第一体积和第一体积的剩余部分确定安瓿中的固体前体的量。

公开(公告)号：US20090084317A1

公开(公告)日：2009-04-02

申请号：US11864053

申请日：2007-09-28

申请人： Dien-Yeh Wu ,  Schubert S. Chu ,  Paul Ma ,  Jeffrey Tobin

发明人： Dien-Yeh Wu ,  Schubert S. Chu ,  Paul Ma ,  Jeffrey Tobin

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45563

摘要： An atomic layer deposition chamber comprises a gas distributor comprising a central cap having a conical passageway between a gas inlet and gas outlet. The gas distributor also has a ceiling plate comprising first and second conical apertures that are connected. The first conical aperture receives a process gas from the gas outlet of the central cap. The second conical aperture extends radially outwardly from the first conical aperture. The gas distributor also has a peripheral ledge that rests on a sidewall of the chamber.

摘要翻译： 原子层沉积室包括气体分布器，该气体分配器包括在气体入口和气体出口之间具有锥形通道的中心盖。 气体分配器还具有包括连接的第一和第二锥形孔的顶板。 第一锥形孔容纳来自中心盖的气体出口的处理气体。 第二锥形孔径从第一锥形孔径向向外延伸。 气体分配器还具有搁置在室的侧壁上的周边凸缘。

公开(公告)号：US20110278260A1

公开(公告)日：2011-11-17

申请号：US12780531

申请日：2010-05-14

申请人： Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

发明人： Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

IPC分类号： H01L21/306 ,  C23F1/00 ,  B05D1/00 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01J37/3211 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J2237/33

摘要： A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

摘要翻译： 提供了一种用于衬底等离子体处理的方法和装置。 处理室具有基板支撑件和面向基板支撑件的盖组件。 盖组件具有等离子体源，其包括设置在导电板内的感应线圈，其可以包括嵌套的导电环。 感应线圈与导电板基本上共面，并且通过安装在形成在导电板中的通道内的绝缘体与绝缘体绝缘，或嵌套在导电环内。 在感应线圈周围设置场集中器，并通过隔离器与其隔离。 等离子体源由导电支撑板支撑。 气体分配器通过支撑板的中心开口和来自设置穿过导电板的导管的等离子体源向腔室供应气体。

公开(公告)号：US06471831B2

公开(公告)日：2002-10-29

申请号：US09757552

申请日：2001-01-09

申请人： Jean Qing Lu ,  Tom Yu ,  Linda Stenzel ,  Jeffrey Tobin

发明人： Jean Qing Lu ,  Tom Yu ,  Linda Stenzel ,  Jeffrey Tobin

IPC分类号： C23C1435

CPC分类号： H01J37/342 ,  C23C14/358 ,  H01J37/3405

摘要： A PVD system comprises a hollow cathode magnetron with a downstream plasma control mechanism. The magnetron has a hollow cathode with a non-planar target and at least one electromagnetic coil to generate and maintain a plasma within the cathode. The magnetron also has an anode located between the cathode and a downstream plasma control mechanism. The control mechanism comprises a first, second and third electromagnetic coil beneath a mouth of the target, vertically spaced so as to form a tapered magnetic convergent lens between the target mouth and a pedestal of the magnetron.

摘要翻译： PVD系统包括具有下游等离子体控制机构的空心阴极磁控管。 磁控管具有具有非平面靶的中空阴极和至少一个电磁线圈，以在阴极内产生和维持等离子体。 磁控管还具有位于阴极和下游等离子体控制机构之间的阳极。 控制机构包括位于目标的嘴部下方的第一，第二和第三电磁线圈，其垂直间隔开，以便在目标嘴与磁控管的基座之间形成锥形磁会聚透镜。

公开(公告)号：US06468404B2

公开(公告)日：2002-10-22

申请号：US09768863

申请日：2001-01-23

申请人： Jean Qing Lu ,  Tom Yu ,  Jeffrey Tobin

发明人： Jean Qing Lu ,  Tom Yu ,  Jeffrey Tobin

IPC分类号： C23C1435

CPC分类号： H01J37/342 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3402

摘要： A PVD system comprises a hollow cathode magnetron with a capability of producing a high magnetic field for PVD and a low magnetic field for pasting. The high magnetic field is used for PVD and causes an optimal uniform film to form on a substrate but redeposits some metals onto a top portion of a target within the magnetron. The low magnetic field erodes redeposited materials from a top portion of a target within the magnetron.

摘要翻译： PVD系统包括具有产生用于PVD的高磁场和用于粘贴的低磁场的能力的空心阴极磁控管。 高磁场用于PVD，并且在衬底上形成最佳的均匀膜，但将一些金属重新沉积到磁控管内的靶的顶部上。 低磁场从磁控管内的靶的顶部侵蚀重新沉积的材料。

公开(公告)号：US10049881B2

公开(公告)日：2018-08-14

申请号：US13536443

申请日：2012-06-28

申请人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

发明人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/28 ,  H01L21/02 ,  H01L21/321 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

公开(公告)号：US20130040444A1

公开(公告)日：2013-02-14

申请号：US13536443

申请日：2012-06-28

申请人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

发明人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

IPC分类号： H01L21/26

CPC分类号： H01L21/28273 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3211 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

摘要翻译： 本发明的实施例提供了一种用于氮化堆叠材料的改进的装置和方法。 在一个实施例中，远程等离子体系统包括限定用于产生包括离子和自由基的等离子体的第一区域的远程等离子体室，限定用于处理半导体器件的第二区域的处理室，所述处理室包括形成在侧壁 处理室的入口端口与第二区域流体连通，以及设置在远程等离子体室和处理室之间并具有与第一区域和入口流体连通的通道的输送构件，其中输送 构件被构造成使得通道的纵向轴线相对于入口的纵向轴线以大约20度至大约80度的角度相交。

公开(公告)号：US20070242434A1

公开(公告)日：2007-10-18

申请号：US11238418

申请日：2005-09-29

申请人： Michael Kelly ,  Mark Johnson ,  William Sisson ,  Jeffrey Tobin

发明人： Michael Kelly ,  Mark Johnson ,  William Sisson ,  Jeffrey Tobin

IPC分类号： H05K7/20

CPC分类号： H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for cooling a circuit comprises generating movement of fluid along a path through a closed-loop system. The method further comprises inducing turbulence in the fluid by movement of at least a portion of a turbulence-inducing device arranged in the path, and dissipating thermal energy from the circuit by the fluid. A system comprises a circuit, and a closed-loop cooling system comprising fluid for cooling the circuit and at least one active turbulence-inducing device. In one embodiment, the turbulence-inducing device is a microelectromechanical system (MEMS) device. In one embodiment, the MEMS device is solely responsible for bulk fluid movement through the closed-loop cooling system.

摘要翻译： 用于冷却回路的方法包括沿着通过闭环系统的路径产生流体的运动。 该方法还包括通过移动位于路径中的紊流诱导装置的至少一部分，并且通过流体从该回路消散热能来在流体中引起湍流。 一种系统包括电路和闭环冷却系统，其包括用于冷却电路的流体和至少一个主动湍流诱导装置。 在一个实施例中，湍流诱导装置是微机电系统（MEMS）装置。 在一个实施例中，MEMS装置单独负责通过闭环冷却系统的大量流体运动。