公开(公告)号：US20160064243A1

公开(公告)日：2016-03-03

申请号：US14643816

申请日：2015-03-10

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akifumi GAWASE ,  Yukiteru MATSUI

IPC: H01L21/3105 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/32134 ,  H01L21/02019 ,  H01L21/30625 ,  H01L21/3105 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/7684

Abstract: A chemical planarization method according to an embodiment includes a step of forming a hydrophobic protective film on a film to be processed with surface asperity. A dissolving solution for dissolving the film to be processed is supplied to the surface of the protective film. A processing body with a hydrophobic surface is brought into contact with or brought closed to the protective film, and a portion of the protective film is selectively removed by hydrophobic interaction from the film to be processed. The film to be processed is dissolved by the dissolving solution after the portion of the protective film is removed.

Abstract translation: 根据实施例的化学平面化方法包括在待加工的表面粗糙的膜上形成疏水性保护膜的步骤。 将用于溶解被处理膜的溶解溶液供给到保护膜的表面。 具有疏水性表面的处理体与保护膜接触或闭合，通过与被处理膜的疏水相互作用选择性地除去保护膜的一部分。 在去除保护膜的部分之后，待处理的膜被溶解溶液溶解。

公开(公告)号：US20160129548A1

公开(公告)日：2016-05-12

申请号：US14847535

申请日：2015-09-08

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akifumi GAWASE ,  Yukiteru MATSUI ,  Takahiko KAWASAKI ,  Yosuke OTSUKA ,  Hajime EDA

IPC: B24B37/24 ,  B24B37/04

CPC classification number: B24B37/24 ,  B24B37/042 ,  B24B37/107

Abstract: In accordance with an embodiment, a polishing method includes supplying slurry to a surface of a polishing layer including a polymer, and bringing a polishing object into contact with the polishing layer to polish the polishing object. The polishing layer has a fibrous first substance mixed therein or contains a second substance. The second substance is higher in specific heat and higher in thermal conductivity than the polymer in such a manner that the second substance is surrounded by the polymer.

Abstract translation: 根据实施例，抛光方法包括将浆料供应到包括聚合物的抛光层的表面，并使研磨对象与抛光层接触以抛光抛光对象。 抛光层具有混合在其中或含有第二物质的纤维状第一物质。 第二物质的比热量高于聚合物，热导率高于第二物质被聚合物包围的方式。

公开(公告)号：US20140220778A1

公开(公告)日：2014-08-07

申请号：US14021413

申请日：2013-09-09

Applicant: Kabushiki Kaisha Toshiba

Inventor： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

IPC: H01L21/306 ,  H01L21/67

CPC classification number: H01L21/67075 ,  B24B37/044 ,  H01L21/31055 ,  H01L21/67092 ,  H01L21/76283

Abstract: According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.

Abstract translation: 根据一个实施例，提供了平面化方法和平面化装置。 在平面化方法中，通过使包含氧化硅膜的工件的工作表面和吸附了氢离子的固体板的表面与一个接触或非常接近的工件表面平坦化 在其中将含有氟离子的处理液供给到固体板的表面的状态下的另一种。

公开(公告)号：US20170110471A1

公开(公告)日：2017-04-20

申请号：US15046643

申请日：2016-02-18

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yasuhito YOSHIMIZU ,  Masaki TSUJI ,  Akifumi GAWASE

IPC: H01L27/115 ,  H01L29/417 ,  H01L29/40

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: According to one embodiment, the stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction through the stacked body. The semiconductor body includes an upper end portion protruding above the stacked body. The stacked film is provided between the semiconductor body and the electrode layers. The stacked film includes a charge storage portion. The conductor is provided at an upper surface and a side surface of the upper end portion of the semiconductor body. The conductor electrically contacts the upper surface and the side surface. The interconnect is provided above the conductor. The interconnect is electrically connected to the conductor.

公开(公告)号：US20150357212A1

公开(公告)日：2015-12-10

申请号：US14826966

申请日：2015-08-14

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

IPC: H01L21/67

CPC classification number: H01L21/67075 ,  B24B37/044 ,  H01L21/31055 ,  H01L21/67092 ,  H01L21/76283

Abstract: According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.

Abstract translation: 根据一个实施例，提供了平面化方法和平面化装置。 在平面化方法中，通过使包含氧化硅膜的工件的工作表面和吸附了氢离子的固体板的表面与一个接触或非常接近的工件表面平坦化 另一种在其中将含有氟离子的处理液供给到固体板的表面的状态。

公开(公告)号：US20140287586A1

公开(公告)日：2014-09-25

申请号：US14016744

申请日：2013-09-03

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yukiteru MATSUI ,  Akifumi GAWASE ,  Gaku MINAMIHARA

IPC: H01L21/306

CPC classification number: B24B37/042 ,  B24B53/017 ,  B24D5/12 ,  B24D5/165 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/7682 ,  H01L21/7684

Abstract: According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO2, planarizing the surface of the to-be-processed film, and etching the planarized surface of the to-be-processed film.

Abstract translation: 根据一个实施例，一种半导体器件的制造方法包括：通过相对介电常数小于SiO 2的介电常数的层，在半导体衬底的表面上形成待处理薄膜的凸面部分和凹形部分， 被处理膜的表面，蚀刻待处理膜的平坦化表面。

公开(公告)号：US20170076953A1

公开(公告)日：2017-03-16

申请号：US15066408

申请日：2016-03-10

Applicant: Kabushiki Kaisha Toshiba

Inventor： Akifumi GAWASE ,  Yukiteru Matsui ,  Takahiko Kawasaki

IPC: H01L21/306 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/32115 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/68764

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.

Abstract translation: 根据实施例，半导体器件的制造方法包括使第一催化剂与工件接触以在工件的表面上形成氧化膜，并将不同于第一催化剂和氧化物膜的第二催化剂引入 彼此接触或者使第二催化剂和氧化物膜彼此更接近以将氧化膜洗脱成处理液。

公开(公告)号：US20160358787A1

公开(公告)日：2016-12-08

申请号：US15009103

申请日：2016-01-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akifumi GAWASE ,  Yukiteru Matsui ,  Kenji Iwade ,  Takahiko Kawasaki

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/324 ,  H01L21/265

CPC classification number: H01L21/31111 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/26506 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/324 ,  H01L21/67086

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes: respectively forming a first layer and a second layer at the top of a protruding portion and at the bottom of a depressed portion of a treatment target having protrusions/depressions in such a manner that sidewalls of the protruding portion is exposed, supplying a treatment liquid to the treatment target having the first layer and the second layer, bringing a catalyst into contact with or closer to the first layer and thereby increasing the dissolution rate of the first layer in dissolving into the treatment liquid and dissolving the first layer into the treatment liquid, and sequentially dissolving the protruding portion and the second layer into the treatment liquid after the dissolution of the first layer.

Abstract translation: 根据实施例，半导体器件的制造方法包括：分别在具有突起/凹陷处的处理对象的凹部的突出部的顶部和底部形成第一层和第二层， 突出部分的侧壁暴露的方式，将处理液供给到具有第一层和第二层的处理对象，使催化剂与第一层接触或接近第一层，从而提高第一层的溶解速率 溶解在处理液中并将第一层溶解到处理液中，并且在第一层溶解之后将突出部分和第二层依次溶解在处理液中。

公开(公告)号：US20160229026A1

公开(公告)日：2016-08-11

申请号：US14848897

申请日：2015-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Takahiko KAWASAKI ,  Yukiteru MATSUI ,  Kenji IWADE ,  Akifumi GAWASE

IPC: B24B37/32

CPC classification number: B24B37/32

Abstract: In accordance with an embodiment, a polishing apparatus includes a polishing table and a polishing head. A retainer ring is attached to a surface of the polishing head. The surface of the polishing head faces the polishing table. The retainer ring includes a ceramic material. The fracture toughness of the ceramic material is 4 MPa·m1/2 or more.

Abstract translation: 根据实施例，抛光装置包括抛光台和抛光头。 保持环附接到抛光头的表面。 抛光头的表面面向抛光台。 保持环包括陶瓷材料。 陶瓷材料的断裂韧性为4MPa·m1 / 2以上。

公开(公告)号：US20170250081A1

公开(公告)日：2017-08-31

申请号：US15434310

申请日：2017-02-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akifumi GAWASE ,  Yukiteru MATSUI ,  Takahiko KAWASAKI

IPC: H01L21/04 ,  H01L21/311 ,  H01L21/324 ,  H01L21/3105 ,  H01L21/265 ,  H01L21/306

CPC classification number: H01L21/31051 ,  H01L21/0465 ,  H01L21/26506 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/425 ,  H01L21/426 ,  H01L29/1608

Abstract: In a substrate processing method according to the embodiment, a first material is implanted into a surface of a target film to modify the surface of the target film. The surface of the target film is dissolved to remove the surface of the target film by bringing a catalytic material close to the surface of the target film or by contacting the catalytic material to the surface of the target film while supplying a process solution on the surface of the target film which has been modified.