公开(公告)号：US5734184A

公开(公告)日：1998-03-31

申请号：US770883

申请日：1996-12-20

申请人： Katsuyoshi Andoh ,  Yoichi Miyai ,  Masayuki Moroi ,  Katsushi Boku

发明人： Katsuyoshi Andoh ,  Yoichi Miyai ,  Masayuki Moroi ,  Katsushi Boku

IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/10829

摘要： A DRAM uses arcuate moats 18 and wavy bit lines 28, 30 for the array of memory cells. A bit line contact 20 occurs at the apex of the moat and storage node contacts 22, 24 occur at the ends of legs 40, 42 extending from the apex. The wavy bit lines have alternating crests 32, 36 and troughs 34, 38. The bit lines are arranged over the moats with the troughs of each bit line overlying and contacting the apexes of each moat and the crests avoiding any moat. The crests and troughs of the bit lines are offset from one another. In a half-pitch pattern, the troughs of one bit line lie adjacent to the crests of the next bit line. The moats are concave between the legs and the angle between the legs is between about 140 and 170 degrees. The angle between the crests and troughs of the bit lines is between about 110 and 160 degrees. In one embodiment, the central portion 70 between the areas surrounding the storage node contacts is about 10% wider than the areas surrounding the storage node contacts.

摘要翻译： DRAM对于存储器单元阵列使用弧形护城河18和波纹位线28,30。 位线接触20发生在护城河的顶点处，并且存储节点接触件22,24发生在从顶点延伸的腿部40,42的端部处。 波纹位线具有交替的峰32,36和槽34,38。位线布置在护城河上，每个位线的槽谷覆盖并接触每个护城河的顶点并且避免任何护城河。 位线的波峰和波谷彼此偏移。 在半间距图案中，一个位线的槽与下一位线的波峰相邻。 护城河两腿之间是凹的，腿之间的角度在大约140和170度之间。 位线的波峰和波谷之间的角度在约110和160度之间。 在一个实施例中，围绕存储节点触点的区域之间的中心部分70比围绕存储节点触点的区域宽约10％。

公开(公告)号：US06204118B1

公开(公告)日：2001-03-20

申请号：US09373214

申请日：1999-08-12

申请人： Yoichi Miyai ,  Masayuki Moroi ,  Katsushi Boku

发明人： Yoichi Miyai ,  Masayuki Moroi ,  Katsushi Boku

IPC分类号： H01L218242

CPC分类号： H01L28/92 ,  H01L27/10852

摘要： An open can-type stacked capacitor is fabricated on local topology by forming a conductive layer (30) outwardly of an insulator (14, 86) and an access line (16, 18) extending from the insulator (14, 86). A mask (40) is formed outwardly of the conductive layer (30). A first electrode (50, 80) is formed by removing at least part of the conductive layer (30) exposed by the mask (40). The first electrode (50, 80) includes an annular sidewall (52) having a first segment (54, 82) disposed on the insulator (14, 86) and a second, opposite segment (56) disposed on the access line (16, 18). A dielectric layer (60) is formed outwardly of the first electrode (50, 80). A second electrode (62) is formed outwardly of the dielectric layer (60).

摘要翻译： 通过在绝缘体（14,86）之外形成导电层（30）和从绝缘体（14,86）延伸的接入线（16,18），在局部拓扑上制造开放式罐式叠层电容器。 在导电层（30）的外侧形成掩模（40）。 通过去除由掩模（40）暴露的导电层（30）的至少一部分来形成第一电极（50,80）。 第一电极（50,80）包括环形侧壁（52），其具有设置在绝缘体（14,86）上的第一段（54,82）和设置在接入线（16）上的第二相对的段（56） 18）。 电介质层（60）形成在第一电极（50,80）的外侧。 第二电极（62）形成在电介质层（60）的外侧。

公开(公告)号：US06580112B2

公开(公告)日：2003-06-17

申请号：US09855401

申请日：2001-05-15

申请人： Yoichi Miyai ,  Masayuki Moroi ,  Katsushi Boku ,  Toshiyuki Nagata

发明人： Yoichi Miyai ,  Masayuki Moroi ,  Katsushi Boku ,  Toshiyuki Nagata

IPC分类号： H01L27108

CPC分类号： H01L27/10855 ,  H01L28/92

摘要： An open can-type stacked capacitor is fabricated by forming a conductive layer (30, 130) outwardly of a substantially uneven surface (12, 112). A step (50, 150) is formed in an outer surface (32, 132) of the conductive layer (30, 130). A base (72, 172, 202) of a first electrode (70, 170, 200) is formed by removing a predetermined thickness (66, 166) of at least part of the conductive layer (30, 130). The base (72, 172, 202) is made of a portion of the conductive layer (30, 130) underlying the step (50, 150) by the predetermined thickness (66, 166). A sidewall (74, 174) of the first electrode (70, 170, 200) is formed. A dielectric layer (80) is formed outwardly of the first electrode (70, 170, 200). A second electrode (82) of the capacitor is formed outwardly of the dielectric layer (80).

摘要翻译： 通过在基本上不平坦的表面（12,112）外部形成导电层（30,130）来制造开放式罐式叠层电容器。 在导电层（30,130）的外表面（32,132）中形成台阶（50,150）。 通过去除导电层（30,130）的至少一部分的预定厚度（66,166）来形成第一电极（70,170,200）的基底（72,172,202）。 基座（72,172,202）由位于台阶（50,150）下方的预定厚度（66,166）的导电层（30,130）的一部分制成。 形成第一电极（70,170,200）的侧壁（74,174）。 电介质层（80）形成在第一电极（70,170,200）的外侧。 电容器的第二电极（82）形成在电介质层（80）的外侧。

公开(公告)号：US06291293B1

公开(公告)日：2001-09-18

申请号：US09373484

申请日：1999-08-12

申请人： Yoichi Miyai ,  Masayuki Moroi ,  Katsushi Boku ,  Toshiyuki Nagata

发明人： Yoichi Miyai ,  Masayuki Moroi ,  Katsushi Boku ,  Toshiyuki Nagata

IPC分类号： H01L218242

CPC分类号： H01L27/10855 ,  H01L28/92

摘要： An open can-type stacked capacitor is fabricated by forming a conductive layer (30, 130) outwardly of a substantially uneven surface (12, 112). A step (50, 150) is formed in an outer surface (32, 132) of the conductive layer (30, 130). A base (72, 172, 202) of a first electrode (70, 170, 200) is formed by removing a predetermined thickness (66, 166) of at least part of the conductive layer (30, 130). The base (72, 172, 202) is made of a portion of the conductive layer (30, 130) underlying the step (50, 150) by the predetermined thickness (66, 166). A sidewall (74, 174) of the first electrode (70, 170, 200) is formed. A dielectric layer (80) is formed outwardly of the first electrode (70, 170, 200). A second electrode (82) of the capacitor is formed outwardly of the dielectric layer (80).

摘要翻译： 通过在基本上不平坦的表面（12,112）外部形成导电层（30,130）来制造开放式罐式叠层电容器。 在导电层（30,130）的外表面（32,132）中形成台阶（50,150）。 通过去除导电层（30,130）的至少一部分的预定厚度（66,166）来形成第一电极（70,170,200）的基底（72,172,202）。 基座（72,172,202）由位于台阶（50,150）下方的预定厚度（66,166）的导电层（30,130）的一部分制成。 第一电极（70,170,200）的侧壁（74,174）形成。 介电层（80）形成在第一电极（70,170,200）的外侧。 电容器的第二电极（82）形成在电介质层（80）的外侧。

公开(公告)号：US09002674B2

公开(公告)日：2015-04-07

申请号：US13478325

申请日：2012-05-23

申请人： Masayuki Moroi ,  Hitoshi Kikuchi

发明人： Masayuki Moroi ,  Hitoshi Kikuchi

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  G01J5/02 ,  G01J5/08 ,  G01J5/00

CPC分类号： C23C16/45525 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/52 ,  G01J5/0007 ,  G01J5/0022 ,  G01J5/025 ,  G01J5/0255 ,  G01J5/026 ,  G01J5/0809 ,  G01J5/0831 ,  G01J5/089 ,  G01J5/0893 ,  G01J2005/0085

摘要： A temperature measurement apparatus for measuring a temperature profile of a substrate mounted on a rotating table, including a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas on a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; a temperature map generating unit that specifies the address of the temperature measurement area based on the number of the temperature measurement areas measured by the radiation temperature measurement unit for each of the scanning operations in the radius direction of the rotating table, and the rotating speed of the rotating table, and stores the temperature in correspondence with the corresponding address in a storing unit; and a temperature data display processing unit that displays a temperature profile of the rotating table.

摘要翻译： 一种用于测量安装在旋转台上的基板的温度分布的温度测量装置，包括辐射温度测量单元，其被配置为通过旋转台的半径方向测量旋转台的表面上的多个温度测量区域的温度 在半径方向上扫描旋转台的表面; 温度映射生成单元，其基于由所述辐射温度测量单元测量的针对所述旋转台的半径方向上的每个扫描操作的温度测量区域的数量来指定所述温度测量区域的地址，以及所述温度测量区域的旋转速度 旋转台，并将与对应的地址对应的温度存储在存储单元中; 以及温度数据显示处理单元，其显示所述旋转台的温度分布。

公开(公告)号：US20110265725A1

公开(公告)日：2011-11-03

申请号：US13120681

申请日：2009-09-25

申请人： Norihiko Tsuji ,  Masayuki Moroi ,  Kenichi Yanagitani ,  Yoshiyuki Hanada

发明人： Norihiko Tsuji ,  Masayuki Moroi ,  Kenichi Yanagitani ,  Yoshiyuki Hanada

IPC分类号： C23C16/455 ,  C23C16/46 ,  C23C16/458

CPC分类号： C23C16/54 ,  C23C16/0245 ,  C23C16/45551 ,  C23C16/4583 ,  H01L21/67005 ,  H01L21/67173 ,  H01L21/67201 ,  H01L21/67346 ,  H01L21/67706

摘要： A film deposition device includes a substrate transporting device arranged in a vacuum chamber to include a circulatory transport path in which substrate mounting parts arranged in a row are transported in a circulatory manner, the circulatory transport path including a linear transport path in which the substrate mounting parts are transported linearly. A first reactive gas supplying part is arranged along a transporting direction in which the substrate mounting parts are transported in the linear transport path, to supply a first reactive gas to the substrate mounting parts. A second reactive gas supplying part is arranged alternately with the first reactive gas supplying part along the transporting direction, to supply a second reactive gas to the substrate mounting parts. A separation gas supplying part is arranged to supply a separation gas to a space between the first reactive gas supplying part and the second reactive gas supplying part.

摘要翻译： 一种成膜装置，其特征在于，具备：布置在真空室内的基板输送装置，包括循环输送路径，其中以循环方式输送排成行的基板安装部，所述循环输送路径包括线性输送路径， 零件被线性运输。 第一反应气体供给部沿着输送方向配置，在输送方向上，基板安装部在线性输送路径中输送，向基板安装部供给第一反应气体。 第二反应气体供给部与输送方向的第一反应气体供给部交替配置，向基板安装部供给第二反应气体。 分离气体供给部被配置为将分离气体供给到第一反应气体供给部和第二反应气体供给部之间的空间。

公开(公告)号：US5052886A

公开(公告)日：1991-10-01

申请号：US286916

申请日：1988-12-20

申请人： Masayuki Moroi

发明人： Masayuki Moroi

IPC分类号： H01L21/683

CPC分类号： H01L21/6838 ,  Y10S414/136

摘要： A device having a circled array of tapered motor driven rollers center and find the flat edge of a semiconductor wafer by rotating the wafer until the flat edge is over a photo cell, at which time finder rollers secure the wafer in its centered and orientated position.

摘要翻译： 具有圆形电动机驱动辊的圆形阵列的装置中心，通过旋转晶片找到半导体晶片的平坦边缘，直到平坦边缘在光电池上方，此时取景器辊将晶片固定在其中心和定向位置。

公开(公告)号：US06873001B1

公开(公告)日：2005-03-29

申请号：US09332360

申请日：1999-06-10

申请人： Toshiyuki Nagata ,  Hiroyuki Yoshida ,  Masayuki Moroi ,  Atsushi Satoh

发明人： Toshiyuki Nagata ,  Hiroyuki Yoshida ,  Masayuki Moroi ,  Atsushi Satoh

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/10811 ,  H01L27/10888 ,  H01L28/91

摘要： In a DRAM array using a capacitor-under-bitline (CUB) layout, the plate layer of the capacitor is significantly reduced in area to reduce misalignments in connections between the bitline and the underlying transistors.

摘要翻译： 在使用电容器下位线（CUB）布局的DRAM阵列中，电容器的平板层的面积显着减小，以减少位线与底层晶体管之间的连接中的不对准。

公开(公告)号：US20090038548A1

公开(公告)日：2009-02-12

申请号：US12162132

申请日：2007-03-30

申请人： Hachishiro Iizuka ,  Tomoyuki Sakoda ,  Naofumi Oda ,  Norihiko Tsuji ,  Masayuki Moroi

发明人： Hachishiro Iizuka ,  Tomoyuki Sakoda ,  Naofumi Oda ,  Norihiko Tsuji ,  Masayuki Moroi

IPC分类号： C23C16/455

CPC分类号： C23C16/4557 ,  C23C16/409 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/31691

摘要： A film forming apparatus includes a process chamber 2 configured to accommodate a semiconductor wafer W; a worktable 5 disposed inside the process chamber 2 and configured to place the semiconductor wafer W thereon; a showerhead 40 used as a process gas delivery mechanism disposed to face the worktable 5 and configured to delivery a process gas into the process chamber 2; and an exhaust unit 101 configured to exhaust gas from inside the process chamber 2, wherein the showerhead 40 has a gas passage formed therein for supplying the process gas, and an annular temperature adjusting cell 400 formed therein around the gas passage.

摘要翻译： 成膜装置包括：配置成容纳半导体晶片W的处理室2; 设置在处理室2内并被配置为将半导体晶片W放置在其上的工作台5; 用作处理气体输送机构的喷头40，其布置成面对工作台5并且构造成将处理气体输送到处理室2中; 以及排气单元101，被配置为从处理室2内部排出气体，其中喷头40具有形成在其中的用于供给处理气体的气体通道，以及围绕气体通道形成的环形温度调节单元400。

公开(公告)号：US08992079B2

公开(公告)日：2015-03-31

申请号：US13478304

申请日：2012-05-23

申请人： Masayuki Moroi ,  Hitoshi Kikuchi ,  Masato Koakutsu

发明人： Masayuki Moroi ,  Hitoshi Kikuchi ,  Masato Koakutsu

IPC分类号： G01K1/14 ,  G01K13/08 ,  H01L21/00 ,  G01N25/00 ,  F27D21/00 ,  H01L21/67 ,  H01L21/687 ,  F27D19/00 ,  F27B17/00

CPC分类号： G01N25/00 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/00 ,  F27D2019/0025 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

摘要： A temperature measurement apparatus for estimating a temperature profile in a process container, includes a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas at a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; an operation control unit that controls to start heating of the process container by a heater while keeping the rotating table immobilized, and controls to repeat a scanning operation, in which the radiation temperature measurement unit scans the surface of the rotating table in the radius direction to obtain the temperature of the plural temperature measurement areas while the rotating table is rotated in a circumferential direction of the rotating table, after a predetermined period has passed from starting the heating of the process container.

摘要翻译： 一种用于估计处理容器中的温度分布的温度测量装置，包括：辐射温度测量单元，被配置为通过扫描旋转台的表面在旋转台的半径方向上测量旋转台的表面处的多个温度测量区域的温度 旋转台在半径方向; 操作控制单元，其通过加热器控制开始加热处理容器，同时保持旋转台的固定，并且控制重复扫描操作，其中辐射温度测量单元将半径方向上的旋转台的表面扫描到 在开始处理容器的加热经过预定时间之后，在旋转台沿旋转台的圆周方向旋转的同时，获得多个温度测量区域的温度。