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11 条记录 (耗时 0.047 秒)

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20100012989A1

    公开(公告)日：2010-01-21

    申请号：US12346522

    申请日：2008-12-30

    申请人： Kee-Jeung LEE ,  Jae-Sung ROH ,  Deok-Sin KIL ,  Young-Dae KIM ,  Jin-Hyock KIM ,  Kwan-Woo DO ,  Kyung-Woong PARK ,  Jeong-Yeop LEE

    发明人： Kee-Jeung LEE ,  Jae-Sung ROH ,  Deok-Sin KIL ,  Young-Dae KIM ,  Jin-Hyock KIM ,  Kwan-Woo DO ,  Kyung-Woong PARK ,  Jeong-Yeop LEE

    IPC分类号： H01L29/78 ,  H01L21/311 ,  H01L21/4763

    CPC分类号： H01L21/31111 ,  H01L21/3146 ,  H01L21/3185 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/91

    摘要： A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes.

    摘要翻译： 半导体器件以及制造该半导体器件的方法，其能够防止在相邻存储节点之间发生倾斜现象。 该方法包括：形成多个多层支柱型存储节点，每个堆叠在多个模具层中，其中多层支柱型存储节点的最上层由支撑层固定，蚀刻一部分 所述支撑层形成开口，并且通过所述开口提供蚀刻溶液以移除所述多个模具层。 通过进行2次以上的处理来沉积和蚀刻成形层的工序，形成多层支柱型存储节点。 因此，充分确保期望的电容，并且避免相邻存储节点之间的倾斜现象。

    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    有机发光二极管显示器及其制造方法

    公开(公告)号：US20140097419A1

    公开(公告)日：2014-04-10

    申请号：US13960221

    申请日：2013-08-06

    申请人： Young-Dae KIM ,  Jong-Yun KIM

    发明人： Young-Dae KIM ,  Jong-Yun KIM

    IPC分类号： H01L27/32 ,  H01L51/56

    CPC分类号： H01L27/3244 ,  H01L27/3223 ,  H01L27/326 ,  H01L27/3276 ,  H01L51/56 ,  H01L2227/323

    摘要： An organic light emitting diode (OLED) display includes a substrate, a first signal line on the substrate, a first thin film transistor connected to the first signal line, a second thin film transistor connected to the first thin film transistor, an interlayer insulating layer on the first thin film transistor and the second thin film transistor, a second signal line on the interlayer insulating layer and connected to a source electrode of the first thin film transistor, a third signal line on the interlayer insulating layer and connected to a source electrode of the second thin film transistor, a first electrode on the interlayer insulating layer and connected to a drain electrode of the second thin film transistor, an organic emission layer on the first electrode, and a second electrode placed on the organic emission layer, wherein the third signal line and the first electrode are made of different metals.

    摘要翻译： 有机发光二极管（OLED）显示器包括衬底，衬底上的第一信号线，连接到第一信号线的第一薄膜晶体管，连接到第一薄膜晶体管的第二薄膜晶体管，层间绝缘层 在所述第一薄膜晶体管和所述第二薄膜晶体管上，在所述层间绝缘层上连接到所述第一薄膜晶体管的源电极的第二信号线，所述层间绝缘层上的与所述第一薄膜晶体管的源电极连接的第三信号线， 所述第二薄膜晶体管的第一电极与所述第二薄膜晶体管的漏电极连接，所述第一电极上的有机发射层和位于所述有机发射层上的第二电极， 第三信号线和第一电极由不同的金属制成。