摘要:
A receiver adapted to be coupled to a data bus and configured to receive data in accordance with a receive clock includes first and second delay-locked loops. The first delay-locked loop is configured to generate a plurality of phase vectors from a first reference clock, and the second delay-locked loop is coupled to the first delay-locked loop and configured to generate the receive clock from at least one phase vector selected from the plurality of phase vectors and a second reference clock.
摘要:
A system includes a first integrated circuit device and a second integrated circuit device. The first device transmits a data sequence to the second integrated circuit device, and the second device samples the data sequence to produce receiver data. The second device then transmits the receiver data back to the first device. Within the first integrated circuit device, a comparison between the data sequence and the receiver data is performed, and based on the comparison, the first device generates information representative of a calibrated timing offset. The first device uses the information representative of the calibrated timing offset to adjust timing associated with transferring write data from the first integrated circuit to the second integrated circuit.
摘要:
A method and apparatus for adjusting the performance of a memory system is provided. A memory system comprises a master device and a slave device. A memory channel couples the master device to the slave device such that the slave device receives the system operating information from the master device via the memory channel. The slave device further includes means for tuning circuitry within the slave device such that the performance of the memory system is improved.
摘要:
A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.
摘要:
A semiconductor memory device has a memory core that includes at least eight banks of dynamic random access storage cells and an internal data bus coupled to the memory core. The internal data bus receives a plurality of data bits from a selected bank of the memory core. The semiconductor memory device further comprises a first interface to receive a read command from external to the semiconductor memory device and a second interface to output first and second subsets of the plurality of data bits. The first subset is output during a first phase of an external clock signal and the second subset is output during a second phase of the external clock signal. The first phase includes a first edge transition and the second phase includes a second edge transition. The second edge transition is an opposite edge transition with respect to the first edge transition.
摘要:
An output driver has an output multiplexor and an output current driver. The output multiplexor receives a data signal and outputs a q-node signal. The output current 5 river receives the q-node signal and drives a bus based on the q-node signal. The output multiplexor processes the data signal in various ways to generate the q-node signal. The output current driver is responsive to current control bits to select a amount of output drive current. In addition, the output multiplexor is controlled such that the output impedance of the output current driver is maintained within a predetermined range.
摘要:
A system includes a master device connected to one or more slave devices via a channel, the channel communicating an externally generated first system clock towards the master device. A delay locked loop circuit receives the first system clock and a second phase feedback signal as inputs and generates a transmit clock signal. A phase offset circuit receives the transmit system clock and generates a phase shifted version of the transmit clock signal as a second system clock. A first phase detector receives a receive system clock and the transmit system clock and generates a first phase feedback signal. A delay element receives the first system clock and the first phase feedback signal and generates a delayed first system clock. A second phase detector receives the delayed first system clock and the second system clock and generates the second phase feedback signal.
摘要:
An integrated circuit memory device includes a first set of pins and a memory core. The first set of pins receive, using a clock signal, a write command and a read command. Control information is issued internally in response to the write command after a predetermined delay time transpires following receipt of the write command, the control information initiating the write operation in the memory device. A second set of pins output the read data after a first delay time transpires from when the read command is received. Each pin of the second set of pins outputs two bits of read data during a clock cycle of the clock signal. The second set of pins also receive write data after a second delay time has transpired from when the write command is received. The second delay time is based on the first delay time.
摘要:
An integrated circuit memory device having delayed write command processing includes a first set of pins coupled to a memory core, the first set of pins to receive a row address followed by a column address. A second set of pins, coupled to memory core, are used to receive a sense command followed by a write command. The sense command specifies the sensing of a row of memory cells identified by the row address, and the write command specifies that the memory device receive write data and store the write data at a column location identified by the column address. The write command is posted internally to the memory device after a first delay has transpired from when the write command is received at the second set of pins.
摘要:
An efficient method and apparatus for characterizing circuit devices is disclosed. In one embodiment, multiple test patterns for testing a circuit device are stored in a tester. Each test pattern includes both test data and control data that defines at least in part a sweep point at which the circuit device is tested. Thus, the tester can generate stimulus vectors for multiple sweep points without requiring control system intervention. Pass/fail indicators, each of which represents pass/fail results associated with a sweep point, are derived from the test results and stored in a Fail Capture Memory. A pass/fail boundary of the DUT can be determined from the contents of the Fail Capture Memory.