-
公开(公告)号：US07190853B2
公开(公告)日：2007-03-13
申请号：US10178965
申请日：2002-06-25
IPC分类号： G02B6/26
CPC分类号： H04B10/2519
摘要： A system for dispersion compensation is provided including a plurality of optical cavities with each including a specific resonant frequency and resonant linewidth. At least one coupling element interconnects the optical cavities. The at least one coupling element defines the coupling strength between the cavities. The optical cavities are interconnected with the at least one coupled element that forms a multi-cavity structure. The multi-cavity structure generates appropriate dispersion properties for dispersion compensation purposes.
摘要翻译： 提供了一种用于色散补偿的系统，包括多个光腔，每个具有特定的谐振频率和谐振线宽。 至少一个耦合元件互连光腔。 所述至少一个联接元件限定所述空腔之间的耦合强度。 光学空腔与形成多腔结构的至少一个耦合元件互连。 多腔结构为色散补偿目的产生适当的色散特性。
-
公开(公告)号：US06846509B2
公开(公告)日：2005-01-25
申请号：US09991438
申请日：2001-11-21
申请人： Kevin M. Chen , Lionel C. Kimerling
发明人： Kevin M. Chen , Lionel C. Kimerling
CPC分类号： C23C14/5806 , C03C17/3417 , C03C2217/228 , C09K11/7701 , C23C14/024 , C23C14/08
摘要： A system for producing Erbium Oxide thin films with increased photoluminescence. The system includes a depositing stage for forming Erbium Oxide molecules by reacting Erbium sputtered atoms with O2 in a gas phase and creating the Erbium Oxide thin film by depositing the Erbium Oxide molecules on a substrate coated with Silicon Oxide. The system further includes an annealing stage for annealing the Erbium Oxide thin films by utilizing a low temperature treatment for a specified amount of time and temperature followed by a high temperature treatment for another specified amount of time and temperature, wherein the crystallinity of the thin films has improved.
摘要翻译： 一种用于生产具有增加的光致发光的铒氧化物薄膜的系统。 该系统包括用于通过使铒溅射的原子与气相中的O 2反应形成铒氧化物分子的沉积阶段，并通过在涂覆有氧化硅的基底上沉积氧化铒分子来产生铒氧化物薄膜。 该系统还包括退火阶段，用于通过在规定时间和温度下进行低温处理，随后进行另一特定时间和温度的高温处理来退火氧化铒薄膜，其中薄膜的结晶度 提高了。
-
公开(公告)号：US20130039618A1
公开(公告)日：2013-02-14
申请号：US13208002
申请日：2011-08-11
申请人： Lionel C. Kimerling , Caroline A. Ross , Lei Bi , Peng Jiang , Juejun Hu , Dong Hun Kim , Gerald F. Dionne
发明人： Lionel C. Kimerling , Caroline A. Ross , Lei Bi , Peng Jiang , Juejun Hu , Dong Hun Kim , Gerald F. Dionne
CPC分类号： G02F1/0955 , G02B6/12004 , G02B6/12007 , G02F1/095 , G02F1/3132 , G02F1/361 , G02F1/3611 , G02F2203/15 , H01F41/14
摘要： A patterned nonreciprocal optical resonator structure is provided that includes a resonator structure that receives an optical signal. A top cladding layer is deposited on a selective portion of the resonator structure. The top cladding layer is patterned so as to expose the core of the resonator structure defined by the selective portion. A magneto-optically active layer includes a magneto-optical medium being deposited on the exposed core of the resonator structure so as to generate optical non-reciprocity.
摘要翻译： 提供了一种图案化的非可逆光学谐振器结构，其包括接收光信号的谐振器结构。 上覆层沉积在谐振器结构的选择部分上。 图案化顶部覆层以便露出由选择部分限定的谐振器结构的芯。 磁光学层包括沉积在谐振器结构的暴露的磁芯上的磁光介质，以产生光学非互易性。
-
公开(公告)号：US20110316018A1
公开(公告)日：2011-12-29
申请号：US12821643
申请日：2010-06-23
申请人： Lionel C. Kimerling , Jifeng Liu , Jurgen Michel
发明人： Lionel C. Kimerling , Jifeng Liu , Jurgen Michel
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01S5/3403 , H01S5/34333
摘要： A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.
摘要翻译： 提供一种发光器件，其包括至少一个第一半导体材料层和至少一个第二半导体材料层。 至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。 所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。 所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。
-
公开(公告)号：US07831123B2
公开(公告)日：2010-11-09
申请号：US11899234
申请日：2007-09-05
IPC分类号： G02B6/10
CPC分类号： G02B6/132 , G02B6/122 , G02B6/1223 , G02B2006/12097 , G02B2006/121 , G02B2006/12169 , G02B2006/12176
摘要： The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.
摘要翻译： 本发明提供一种具有波导芯的波导，波导芯具有纵向侧壁表面，纵向顶表面和设置在基底上的纵向底表面。 界面层设置在波导芯的至少一个纵向侧壁表面上。 至少在波导芯侧壁和顶表面上，在界面层上设置波导覆层。 本发明的波导可以通过在基板上形成波导管下封层，然后在下封层上形成波导芯来制造。 然后在波导芯的至少纵向侧壁表面上形成界面层，并且在该界面层上的纵向顶表面和波导芯的纵向侧壁表面上形成上覆层。
-
公开(公告)号：US07787176B2
公开(公告)日：2010-08-31
申请号：US10234785
申请日：2002-09-04
CPC分类号： H01S5/50 , H01S5/026 , H01S5/10 , H01S5/101 , H01S5/1032 , H01S5/1046 , H01S5/30
摘要： An on-chip amplifier includes first element that curtails the velocity of an incoming light to the amplifier. A second element is doped so as to make the frequency of the incoming light equal to the electron frequency in order to allow for electron-photon wave interaction, so that when current flows through the amplifier, electron power is transferred to the incoming light, resulting in amplification of the incoming light.
摘要翻译： 片上放大器包括第一元件，其将入射光的速度限制到放大器。 掺杂第二元素以使入射光的频率等于电子频率，以便允许电子 - 光子波相互作用，使得当电流流过放大器时，电子功率被转移到入射光，导致 放大入射光。
-
7.发明授权Energy coupled superlattice structures for silicon based lasers and modulators 有权用于硅基激光器和调制器的能量耦合超晶格结构公开(公告)号：US07738756B2
公开(公告)日：2010-06-15
申请号：US11490961
申请日：2006-07-21
IPC分类号： G02B6/10
CPC分类号： H01S3/0632 , G02B6/12004 , H01S3/0637 , H01S3/1603 , H01S3/1608 , H01S3/1628 , H01S3/17
摘要： A waveguide structure includes a SOI substrate. A core structure is formed on the SOI substrate comprising a plurality of multilayers having alternating or aperiodically distributed thin layers of either Si-rich oxide (SRO), Si-rich nitride (SRN) or Si-rich oxynitride (SRON). The multilayers are doped with a rare earth material so as to extend the emission range of the waveguide structure to the near infrared region. A low index cladding includes conductive oxides to act as electrodes.
摘要翻译： 波导结构包括SOI衬底。 在包括多个具有富Si氧化物（SRO），富Si的氮化物（SRN）或富Si氧氮化物（SRON）的交替或非周期分布的薄层的多层的SOI衬底上形成芯结构。 多层掺杂有稀土材料，以将波导结构的发射范围扩展到近红外区域。 低折射率包层包括用作电极的导电氧化物。
-
公开(公告)号：US07659627B2
公开(公告)日：2010-02-09
申请号：US11950795
申请日：2007-12-05
IPC分类号： H01L29/41
CPC分类号： H01L27/1446 , H01L31/022408 , H01L31/085
摘要： A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.
摘要翻译： 光敏二极管平衡灵敏度和速度提高。 光电二极管包括半导体衬底，形成在半导体衬底上的有源区和连接到有源区的梳状电极。 梳状电极包括多个电极指，并且每个电极指包括与活性区接触的透明电极和形成在透明电极上的不透明电极。 这里，不透明电极的宽度被设定为小于透明电极的宽度。
-
公开(公告)号：US07565046B2
公开(公告)日：2009-07-21
申请号：US11954461
申请日：2007-12-12
申请人： Ning-Ning Feng , Rong Sun , Lionel C. Kimerling , Jurgen Michel
发明人： Ning-Ning Feng , Rong Sun , Lionel C. Kimerling , Jurgen Michel
CPC分类号： G02B6/1223 , B82Y20/00 , G02B6/1225 , G02B6/1228 , G02B6/305 , G02B2006/12097 , G02B2006/12195
摘要： The mode transforming structure includes a first waveguide structure. A slot waveguide region is coupled to the first waveguide structure. The slot waveguide region includes one or more complementary tapered pairs so near lossless transforming between the first waveguide structure and the slot waveguide region occurs so as to allow optical modes to be transferred between the first waveguide and the slot waveguide region.
摘要翻译： 模式转换结构包括第一波导结构。 缝隙波导区域耦合到第一波导结构。 缝隙波导区域包括一个或多个互补锥形对，使得在第一波导结构和缝隙波导区域之间进行接近无损变换，从而允许在第一波导和缝隙波导区域之间传输光学模式。
-
10.发明申请Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches 审中-公开通过顺序热退火方法从硅基纳米晶体的光发射公开(公告)号：US20090093074A1
公开(公告)日：2009-04-09
申请号：US12137224
申请日：2008-06-11
IPC分类号： H01L21/28
CPC分类号： H05B33/10 , B82Y30/00 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. A first annealing step is performed at a first temperature in a processing chamber or annealing furnace; and, thereafter, a second annealing step is performed at a second temperature in the processing chamber or annealing furnace. The second temperature is greater than the first temperature, and the photoluminescence of the film after the second annealing step is greater than the photoluminescence of the film without the first annealing step.
摘要翻译： 一种用于增强光致发光的方法包括提供设置在衬底上的膜，所述膜包括半导体和电介质材料中的至少一种。 当使用SiO 2和SiN x或富Si氧化物的薄膜层时，可以通过生长后处理热退火来激发发光。 在处理室或退火炉中的第一温度下进行第一退火步骤; 之后，在处理室或退火炉中，在第二温度下进行第二退火工序。 第二温度大于第一温度，第二退火步骤后的膜的光致发光比没有第一退火步骤的膜的光致发光大。
-
-
-
-
-
-
-
-
-
搜索结果
98 条记录 (耗时 0.025 秒)
