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    Semiconductor device and method of manufacturing the same
    5.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US08110923B2

    公开(公告)日：2012-02-07

    申请号：US12851566

    申请日：2010-08-06

    申请人： Kiyonori Watanabe

    发明人： Kiyonori Watanabe

    IPC分类号： H01L23/48

    CPC分类号： H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2223/5448 ,  H01L2223/54486 ,  H01L2224/0401 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/00

    摘要： An improved manufacturing method of a semiconductor device is provided. The method includes preparing a semiconductor substrate having an integrated circuit together with connection pads. The method also includes forming a dielectric film on the semiconductor substrate. The method also includes forming connection wires having a predetermined pattern on the dielectric film such that the connection wires are electrically connected to the connection pads. The method also includes forming a surface resin layer to partially cover the connection wire. The method also includes forming a metal film over the exposed connection wires. The method also includes forming a display unit having through holes to present identification information in a region corresponding to the center area of the semiconductor substrate on the surface resin layer. The forming of the metal film and the forming of display unit are carried out simultaneously.

    摘要翻译： 提供了一种改进的半导体器件的制造方法。 该方法包括制备具有集成电路和连接焊盘的半导体衬底。 该方法还包括在半导体衬底上形成电介质膜。 该方法还包括在电介质膜上形成具有预定图案的连接线，使得连接线电连接到连接焊盘。 该方法还包括形成表面树脂层以部分地覆盖连接线。 该方法还包括在暴露的连接线上形成金属膜。 该方法还包括形成具有通孔的显示单元，以在与表面树脂层上的半导体衬底的中心区域对应的区域中呈现识别信息。 金属膜的形成和显示单元的形成同时进行。

    Semiconductor device
    6.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：US20100283150A1

    公开(公告)日：2010-11-11

    申请号：US12805169

    申请日：2010-07-15

    申请人： Kiyonori Watanabe

    发明人： Kiyonori Watanabe

    IPC分类号： H01L23/49 ,  H01L23/498 ,  H01L23/48

    CPC分类号： H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2224/13099

    摘要： The present invention provides a method for forming a semiconductor device, which comprises the steps of preparing a semiconductor wafer including an electrode pad, an insulating film formed with a through hole and a bedding metal layer which are formed in a semiconductor substrate, forming a first resist mask which exposes each area for forming a redistribution wiring, over the bedding metal layer, forming a redistribution wiring connected to the electrode pad and extending in an electrode forming area for a post electrode with the first resist mask as a mask, removing the first resist mask by a dissolving solution to expose each area excluding the electrode forming area for the redistribution wiring and forming a second resist mask disposed with being separated from each side surface of the redistribution wiring, forming a redistribution wiring protective metal film over upper and side surfaces of the exposed redistribution wiring with the second resist mask as a mask, removing the second resist mask by a dissolving solution, attaching a dry film over the semiconductor wafer and exposing the electrode forming area lying over the redistribution wiring, forming a post electrode in the electrode forming area with the dry film as a mask, removing the dry film by a removal solvent, and removing the redistribution wiring protective metal film after the removal of the dry film.

    摘要翻译： 本发明提供一种形成半导体器件的方法，其包括以下步骤：制备半导体晶片，该半导体晶片包括形成在半导体衬底中的电极焊盘，形成有通孔的绝缘膜和层压金属层，形成第一 抗蚀剂掩模，其在床垫金属层上暴露用于形成再分布布线的每个区域，形成连接到电极焊盘的再分配布线，并且在第一抗蚀剂掩模作为掩模的用于柱状电极的电极形成区域中延伸，去除第一 通过溶解溶液防止掩模暴露除了用于再分配布线的电极形成区域之外的各个区域，并且形成设置为与再分布布线的每个侧表面分离的第二抗蚀剂掩模，在重新分布布线保护金属膜的上表面和侧表面上形成 以第二抗蚀剂掩模为掩模的曝光再分配布线，除去s 通过溶解溶液涂覆抗蚀剂掩模，在半导体晶片上附着干膜，暴露位于再分布布线上的电极形成区域，在干燥膜作为掩模的电极形成区域中形成柱状电极，通过 去除溶剂，并且在除去干膜之后除去再分布布线保护金属膜。