公开(公告)号：US20140212764A1

公开(公告)日：2014-07-31

申请号：US14350386

申请日：2013-07-23

申请人： Kohei Fujita ,  Kiyoshi Nouzuka ,  Shota Iwasaki ,  Junichi Nishizawa ,  Kazuma Saito ,  Hiroyuki Ishiguro

发明人： Kohei Fujita ,  Kiyoshi Nouzuka ,  Shota Iwasaki ,  Junichi Nishizawa ,  Kazuma Saito ,  Hiroyuki Ishiguro

IPC分类号： H01M4/74

CPC分类号： H01M4/742 ,  H01M4/685 ,  H01M4/73 ,  H01M4/82 ,  H01M10/06 ,  Y02E60/126 ,  Y02P70/54 ,  Y10T29/10

摘要： [Object] To regularize a potential distribution at a grid, prevent local corrosion, and lengthen product lifetime.[Solution Means] A storage battery grid includes: a frame bone 2 that includes a substantially rectangular shape; a lug portion 21 that is formed upward from an upper side 2a of the frame bone 2; one or more main vertical bone 3X that extend downward from the lug portion 21 in the frame bone 2; plural slanted bones 4 that extend obliquely from the upper side 2a toward a lower side 2b, at least the slanted bones branching from the main vertical bone 3X, which is a center, toward both sides. The slanted bones 4 are arranged at intervals in a direction in which the main vertical bone 3X extends, and at least part of plural spaces, which are defined by the main vertical bone 3X partially forming a side of the spaces, include a substantially quadrilateral shape.

摘要翻译： [对象]规范电网的电位分布，防止局部腐蚀，延长产品寿命。 蓄电池栅格包括：骨架2，其包括大致矩形的形状; 从骨架2的上侧2a向上方形成的突出部21; 从框架骨2中的突出部21向下延伸的一个或多个主垂直骨3X; 从上侧2a向下侧2b倾斜延伸的多个倾斜骨4，至少从两侧分别从作为中心的主垂直骨3X的倾斜骨。 倾斜骨4沿主垂直骨3X延伸的方向间隔设置，并且由主垂直骨3X限定的多个空间的至少一部分，其部分地形成空间的一侧，包括大致四边形的形状 。

公开(公告)号：US5663582A

公开(公告)日：1997-09-02

申请号：US651851

申请日：1996-05-21

申请人： Junichi Nishizawa ,  Kaoru Motoya ,  Akira Ito

发明人： Junichi Nishizawa ,  Kaoru Motoya ,  Akira Ito

IPC分类号： H01L21/335 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/772 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L29/66416 ,  H01L29/0619 ,  H01L29/41741 ,  H01L29/42316 ,  H01L29/7722

摘要： A recess-gate type static induction transistor having a high breakdown voltage is provided, which includes an n-type channel region provided over an n.sup.+ -type drain region, p.sup.+ -type elongated gate regions provided in grooves of the channel region, n.sup.+ -type elongated regions formed on the channel region so as to be arranged in parallel with the gate regions, each of which is disposed between the gate regions, and a p.sup.+ -type guard ring region provided in the channel region and arranged to surround the gate regions. The elongated gate regions are coupled to the guard ring region at both edges. In addition, the outer-most elongated gate regions are coupled to the guard ring region along the longitudinal direction, respectively, thereby increasing the breakdown voltage of the device. Further, gate and source contact pads are provided only on the guard ring region so as to be opposed, thereby reducing unwanted parasitic capacitances between gate and drain regions and between gate and source regions.

摘要翻译： 提供具有高击穿电压的凹槽式静电感应晶体管，其包括设置在n +型漏极区上的n型沟道区，设置在沟道区的沟槽中的p +型细长栅极区，n +型 形成在沟道区上的细长区域，以与栅极区域平行设置，每个栅极区域设置在栅极区域之间，而p +型保护环区域设置在沟道区域中并被布置成围绕栅极区域。 细长的栅极区域在两个边缘处耦合到保护环区域。 此外，最外延长的栅极区域分别沿着纵向方向耦合到保护环区域，从而增加了器件的击穿电压。 此外，栅极和源极接触焊盘仅在保护环区域上提供以相对，从而减少栅极和漏极区域之间以及栅极和源极区域之间的不必要的寄生电容。

公开(公告)号：US4816891A

公开(公告)日：1989-03-28

申请号：US8059

申请日：1987-01-09

申请人： Junichi Nishizawa

发明人： Junichi Nishizawa

IPC分类号： H01L29/74 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L31/10 ,  H01L31/111 ,  H02M1/08 ,  H03K17/73 ,  H03K17/79

CPC分类号： H03K17/79 ,  H01L29/0834 ,  H01L29/1066 ,  H01L29/7391 ,  H01L29/7392 ,  H01L31/1116 ,  H03K17/73

摘要： A semiconductor device comprises a static induction thyristor and a photosensitive element connected to a gate of the static induction thyristor so that the static induction thyristor is controlled optically. A plurality of the semiconductor devices are easily connected in series and/or in parallel with each other to control a large current and/or voltage.

摘要翻译： 半导体器件包括静态感应晶闸管和连接到静态感应晶闸管的栅极的感光元件，从而光学地控制静态感应晶闸管。 多个半导体器件易于串联和/或并联连接以控制大的电流和/或电压。

公开(公告)号：US4806321A

公开(公告)日：1989-02-21

申请号：US759098

申请日：1985-07-25

申请人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

发明人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

IPC分类号： H01L21/268 ,  C23C16/48 ,  C30B25/10 ,  C30B25/16 ,  H01L21/205 ,  C30B35/00 ,  C30B23/02 ,  C30B25/14

CPC分类号： C30B25/16 ,  C30B25/105 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661

摘要： In a semiconductor crystal growth apparatus, a growth vessel enclosing a substrate is evacuated to an ultrahigh vacuum, and gas molecules containing a component element of a semiconductor which should grow on the substrate is introduced according to a predetermined time sequence into the growth vessel from an external gas source. Infrared radiation from an infrared radiation emitting lamp associated with the growth vessel and controlled by a temperature control unit is directed toward and onto the substrate whose temperature is to be maintained at a predetermined setting. Crystal growth of one molecular layer after another can be achieved by the apparatus with dimensional accuracy of the thickness of a single molecular layer.

摘要翻译： 在半导体晶体生长装置中，将包围衬底的生长容器抽真空至超高真空，并且将含有应在衬底上生长的半导体组分元素的气体分子根据预定时间序列从生长容器 外部气源。 来自与生长容器相关并由温度控制单元控制的红外辐射发射灯的红外辐射被引导到衬底上并将其温度保持在预定的设置。 另一个分子层的晶体生长可以通过具有单分子层厚度的尺寸精度的装置来实现。

公开(公告)号：US4712122A

公开(公告)日：1987-12-08

申请号：US759090

申请日：1985-07-25

申请人： Junichi Nishizawa ,  Kaoru Motoya

发明人： Junichi Nishizawa ,  Kaoru Motoya

IPC分类号： H01L27/06 ,  H01L29/10 ,  H01L29/205 ,  H01L29/43 ,  H01L29/772 ,  H01L29/80

CPC分类号： H01L29/7722 ,  H01L27/0605 ,  H01L29/1025 ,  H01L29/205 ,  H01L29/432

摘要： A junction field effect transistor has a wide bandgap heterojunction gate. The source to gate spacing is less than the carrier mean free path for ballistic transport. The channel thickness is less than twice the Debye length.

摘要翻译： 结型场效应晶体管具有宽带隙异质结栅极。 源极间距小于载物平均自由程，用于弹道输送。 通道厚度小于德拜长度的两倍。

公开(公告)号：US4596605A

公开(公告)日：1986-06-24

申请号：US561443

申请日：1983-12-14

申请人： Junichi Nishizawa ,  Sohbe Suzuki ,  Mitsuru Ikeda ,  Hideki Mutoh

发明人： Junichi Nishizawa ,  Sohbe Suzuki ,  Mitsuru Ikeda ,  Hideki Mutoh

IPC分类号： H01L21/265 ,  H01L21/335 ,  H01L29/167 ,  H01L29/772 ,  H01L31/112 ,  H01L29/78

CPC分类号： H01L29/66416 ,  H01L21/26506 ,  H01L29/167 ,  H01L29/7722 ,  H01L31/1126

摘要： In a process for fabricating a static induction transistor having a gate region which is formed in a semiconductor layer including a channel region, ions of an impurity element are implanted into the semiconductor layer from the surface thereof to form the gate region. Ions of an element lighter than the impurity element are implanted into the gate region from the surface of the semiconductor layer in such a way that the concentration of the light element exhibits a plurality of profiles in the depth direction of the semiconductor layer. The semiconductor layer is annealed at a relatively low temperature after the two implanting steps to form the gate region in the semiconductor layer. A solid-state image sensor device is fabricated by using the static induction transistor as a picture cell.

摘要翻译： 在制造具有形成在包括沟道区的半导体层中的栅极区域的静电感应晶体管的工艺中，杂质元素的离子从其表面注入到半导体层中以形成栅极区。 将比杂质元素更轻的元件的离子从半导体层的表面以这样的方式注入到栅极区域中，使得光元件的浓度在半导体层的深度方向上呈现多个分布。 在两个注入步骤之后，半导体层在相对低的温度下退火以在半导体层中形成栅极区域。 通过使用静电感应晶体管作为图像单元来制造固态图像传感器装置。

公开(公告)号：US4571624A

公开(公告)日：1986-02-18

申请号：US561444

申请日：1983-12-14

申请人： Junichi Nishizawa ,  Takashige Tamamushi ,  Koji Shimanuki ,  Masafumi Inuiya

发明人： Junichi Nishizawa ,  Takashige Tamamushi ,  Koji Shimanuki ,  Masafumi Inuiya

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N3/12

CPC分类号： H04N3/1512

摘要： A two-dimensional solid-state image sensor device, comprising: a plurality of picture cells which are two-dimensionally arranged in column and row directions, and each of which comprises a static induction transistor having drain and source regions with one conductivity type which are disposed on opposite sides of a high resistance semiconductor channel region, and control and shielding gate regions with the other conductivity type which are adjacent to the channel region to control a current flowing between the drain and source regions, and a transparent electrode disposed via a capacitance on at least a portion of the control gate region, in a manner that light is incident through the transparent electrode to the control gate region in which the charge produced by the light excitation is stored to control the current; a plurality of selection lines, each of which connects the control gate regions in each column in common via the capacitances; and a plurality of signal readout lines, each of which connects the drain or source regions in each row in common. Each picture cell is selected in the column and row directions so that a signal is read out therefrom. The shielding gate regions are electrically connected in common in the column or row direction and electrically isolated in the remaining direction so that voltages are independently applied to the pixels.

摘要翻译： 一种二维固态图像传感器装置，包括：沿列和行方向二维排列的多个图像单元，每个图像单元包括具有一个导电类型的漏极和源极区的静态感应晶体管， 设置在高电阻半导体沟道区域的相对侧，以及与沟道区域相邻的具有另一导电类型的控制和屏蔽栅极区域，以控制在漏极和源极区域之间流动的电流，以及经由电容器设置的透明电极 在控制栅极区域的至少一部分上，以光通过透明电极入射到其中存储由光激发产生的电荷来控制电流的控制栅极区域; 多个选择线，其中每个选择线通过电容将每列中的控制栅极区域共同连接; 以及多个信号读取线，每条信号读出线共同连接每行的漏极或源极区域。 在列和行方向上选择每个图像单元，从而从其读出信号。 屏蔽栅极区域在列或行方向上共同电连接，并且在剩余方向上电隔离，使得电压独立地施加到像素。

公开(公告)号：US4524391A

公开(公告)日：1985-06-18

申请号：US579644

申请日：1984-02-13

申请人： Junichi Nishizawa ,  Takashige Tamamushi ,  Koji Shimanuki ,  Masafumi Inuiya

发明人： Junichi Nishizawa ,  Takashige Tamamushi ,  Koji Shimanuki ,  Masafumi Inuiya

IPC分类号： H01L27/146 ,  H04N5/30 ,  H04N5/335 ,  H04N3/12

CPC分类号： H01L27/14679 ,  H04N5/30

摘要： A two-dimensional solid-state image sensor device comprising a plurality of picture cells two-dimensionally arranged in column and row directions. Each cell has a static induction transistor having drain and source regions disposed on opposite sides of a high resistance semiconductor channel region, and control and shielding gate regions adjacent to the channel region to control a current flowing between the drain and source regions, and a transparent electrode disposed via a capacitance on at least a portion of the control gate region, in a manner that light is incident through the transparent electrode to the control gate region in which the charge produced by the light excitation is stored to control the current. Selection lines and signal readout lines are connected to the control gate regions in each column in common via the capacitances and to the drain or source regions in each row in common, respectively. Each picture cell is selected in the column and row directions so that a signal is read out therefrom.

摘要翻译： 一种二维固态图像传感器装置，其包括在列和行方向上二维布置的多个图像单元。 每个单元具有静电感应晶体管，其具有设置在高电阻半导体沟道区域的相对侧上的漏极和源极区域，以及与沟道区域相邻的控制和屏蔽栅极区域，以控制在漏极和源极区域之间流动的电流，以及透明 电极，其通过在控制栅极区域的至少一部分上的电容设置，使得光通过透明电极入射到控制栅极区域，在该控制栅极区域存储由光激发产生的电荷以控制电流。 选择线和信号读出线分别经由电容和每行中的漏极或源极区域共同地连接到每列中的控制栅极区域。 在列和行方向上选择每个图像单元，从而从其读出信号。

公开(公告)号：US4346513A

公开(公告)日：1982-08-31

申请号：US152024

申请日：1980-05-21

申请人： Junichi Nishizawa ,  Masafumi Shimbo

发明人： Junichi Nishizawa ,  Masafumi Shimbo

IPC分类号： H01L21/8222 ,  H01L21/20 ,  H01L21/205 ,  H01L21/306 ,  H01L21/308 ,  H01L21/76 ,  H01L21/761 ,  H01L21/762 ,  H01L27/06 ,  H01L21/302

CPC分类号： H01L21/76297 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/30608 ,  H01L21/308 ,  H01L21/76 ,  Y10S117/902 ,  Y10S438/975

摘要： A method of fabricating a semiconductor integrated circuit device wherein a substrate having a particular crystallographic orientation is selectively etched so as to form surface depressions of different depths. An epitaxial layer is grown from a Si--H--Cl system on the surface of the substrate having the surface depressions formed therein. The epitaxial layer is grown under conditions effective to achieve faster lateral growth than vertical growth so as to form the epitaxial layer with regions of three different thicknesses. Subsequently, additional regions of the semiconductor integrated circuit are formed in the epitaxial layer regions of different thicknesses so as to complete the device.

摘要翻译： 一种制造半导体集成电路器件的方法，其中选择性地蚀刻具有特定晶体取向的衬底，以形成不同深度的表面凹陷。 在其中形成有表面凹陷的衬底的表面上从Si-H-Cl系生长外延层。 在有效地实现比垂直生长更快的横向生长的条件下生长外延层，以便形成具有三个不同厚度的区域的外延层。 随后，在不同厚度的外延层区域中形成半导体集成电路的附加区域，以便完成该器件。

公开(公告)号：US06323832B1

公开(公告)日：2001-11-27

申请号：US08152102

申请日：1993-11-15

申请人： Junichi Nishizawa ,  Yoshikatsu Tamaoki

发明人： Junichi Nishizawa ,  Yoshikatsu Tamaoki

IPC分类号： G09G332

CPC分类号： G09F13/22 ,  G09F2013/222 ,  Y10S362/80

摘要： A color display device in which a plurality of units are arranged in a matrix, each unit having collectively disposed three light emission diodes of three colors, for example, red, yellowish green, and blue, and in which emission intensity and a luminous color of each light emission diode can be controlled by supplying each light emission diode with a time series electric pulse while varying its intensity and width. In the device according to the present invention, the electrodes are provided collectively on one side of the flexible insulator substrate and multilayer wiring is formed by evaporation or plating on the substrate so that the device has an advantage which could not obtained in the conventional display devices in that the display portion thereof can be rolled.

摘要翻译： 一种彩色显示装置，其中多个单元以矩阵形式布置，每个单元共同设置三个三色发光二极管，例如红色，黄绿色和蓝色，其中发光强度和发光颜色 可以通过在改变其强度和宽度的同时向每个发光二极管提供时间序列电脉冲来控制每个发光二极管。在根据本发明的装置中，电极集中地设置在柔性绝缘体基板的一侧和多层 通过在基板上进行蒸镀或电镀而形成布线，使得该装置具有在传统的显示装置中无法获得的优点，因为其显示部分可以滚动。