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1.发明授权Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes 有权在GAN基板上制造半导体器件的方法，其具有相对于{0001}晶面的朝向<1-100>和<11-20>方向的双向倾斜公开(公告)号：US07531397B2
公开(公告)日：2009-05-12
申请号：US11969079
申请日：2008-01-03
申请人： Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
发明人： Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
IPC分类号： H01L21/36
CPC分类号： H01L33/32 , C30B25/18 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/205 , H01L29/7787 , H01L29/812 , H01L29/861 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/32341
摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.
摘要翻译： 半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值 表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。
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2.发明申请SEMICONDUCTOR DEVICE ON GaN SUBSTRATE HAVING SURFACE BIDIRECTIONALLY INCLINED TOWARD <1-100> AND <11-20> DIRECTIONS RELATIVE TO {0001} CRYSTAL PLANES 有权具有表面的GaN衬底上的半导体器件相对于{0001}晶体平面相对于<1-100>和<11-20>方向公开(公告)号：US20080113497A1
公开(公告)日：2008-05-15
申请号：US11969079
申请日：2008-01-03
申请人： Koichi TACHIBANA , Chie Hongo , Shinya Nunoue , Masaaki Onomura
发明人： Koichi TACHIBANA , Chie Hongo , Shinya Nunoue , Masaaki Onomura
CPC分类号： H01L33/32 , C30B25/18 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/205 , H01L29/7787 , H01L29/812 , H01L29/861 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/32341
摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.
摘要翻译： 半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值 表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。
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3.发明申请Semiconductor substrate and semiconductor device manufactured by epitaxial growth on the semiconductor substrate 有权通过在半导体衬底上外延生长制造的半导体衬底和半导体器件公开(公告)号：US20060043419A1
公开(公告)日：2006-03-02
申请号：US11185768
申请日：2005-07-21
申请人： Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
发明人： Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
IPC分类号： H01L31/109
CPC分类号： H01L33/32 , C30B25/18 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/205 , H01L29/7787 , H01L29/812 , H01L29/861 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/32341
摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.
摘要翻译： 半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值 表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。
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4.发明授权Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes 有权半导体器件相对于{0001}晶面相对于<1-100>和<11-20>具有双向倾斜公开(公告)号：US07339255B2
公开(公告)日：2008-03-04
申请号：US11185768
申请日：2005-07-21
申请人： Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
发明人： Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
IPC分类号： H01L29/04
CPC分类号： H01L33/32 , C30B25/18 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/205 , H01L29/7787 , H01L29/812 , H01L29/861 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/32341
摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.
摘要翻译： 半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值 表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。
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公开(公告)号：US20070086496A1
公开(公告)日：2007-04-19
申请号：US11357408
申请日：2006-02-21
申请人： Akira Tanaka , Chie Hongo , Yoshiyuki Harada , Hideto Sugawara , Masaaki Onomura , Hiroshi Katsuno
发明人： Akira Tanaka , Chie Hongo , Yoshiyuki Harada , Hideto Sugawara , Masaaki Onomura , Hiroshi Katsuno
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L2224/48091 , H01L2224/73265 , H01S5/2009 , H01S5/22 , H01S5/3216 , H01S5/3407 , H01L2924/00014
摘要： A semiconductor light emitting device comprises: a first cladding layer made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a well layer made of nitride semiconductor, the well layer being provided between the first barrier layer and the second barrier layer; and a second cladding layer provided on the active layer, the second cladding layer being made of nitride semiconductor of a second conductivity type. The first and second barrier layers and the well layer contain indium. At least one of the first barrier layer and the second barrier layer has a thickness of 30 nm or more.
摘要翻译： 一种半导体发光器件包括：由第一导电类型的氮化物半导体制成的第一覆层; 设置在所述第一包层上的有源层，所述有源层包括由氮化物半导体制成的第一势垒层，由氮化物半导体制成的第二阻挡层，以及由氮化物半导体制成的阱层，所述阱层设置在所述第一栅极 层和第二阻挡层; 以及设置在所述有源层上的第二覆层，所述第二覆层由第二导电类型的氮化物半导体制成。 第一和第二阻挡层和阱层含有铟。 第一阻挡层和第二阻挡层中的至少一个具有30nm以上的厚度。
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公开(公告)号：US07333523B2
公开(公告)日：2008-02-19
申请号：US11484006
申请日：2006-07-11
申请人： Akira Tanaka , Hideto Sugawara , Chie Hongo , Yoshiyuki Harada , Masaaki Onomura
发明人： Akira Tanaka , Hideto Sugawara , Chie Hongo , Yoshiyuki Harada , Masaaki Onomura
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/3054
摘要： A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.
摘要翻译： 一种半导体激光装置，包括：第一导电类型的第一包层; 设置在所述第一包层上并具有量子阱结构的有源层; 设置在溢出阻挡层上的第二导电类型的溢出阻挡层。 有源层包括杂质浓度为3×10 -3 -3 -3以上并且在溢流阻挡层和阱层之间具有30nm或更小的厚度的区域 在活动层衣柜中到溢出阻挡层。
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公开(公告)号：US20070009000A1
公开(公告)日：2007-01-11
申请号：US11484006
申请日：2006-07-11
申请人： Akira Tanaka , Hideto Sugawara , Chie Hongo , Yoshiyuki Harada , Masaaki Onomura
发明人： Akira Tanaka , Hideto Sugawara , Chie Hongo , Yoshiyuki Harada , Masaaki Onomura
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/3054
摘要： A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.
摘要翻译： 一种半导体激光装置，包括：第一导电类型的第一包层; 设置在所述第一包层上并具有量子阱结构的有源层; 设置在溢出阻挡层上的第二导电类型的溢出阻挡层。 有源层包括杂质浓度为3×10 -3 -3 -3以上并且在溢流阻挡层和阱层之间具有30nm或更小的厚度的区域 在活动层衣柜中到溢出阻挡层。
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公开(公告)号：US06185238B2
公开(公告)日：2001-02-06
申请号：US09026913
申请日：1998-02-20
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01S5/0213 , H01S5/0224 , H01S5/02272 , H01S5/2213 , H01S5/2219 , H01S5/3211 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： In a nitride compound semiconductor laser including an active layer sandwiched by semiconductor layers of different conduction types on a sapphire substrate, layers of polyimide for current blocking and light confinement are formed on side surfaces of a mesa-type current confining structure with and under the p-side electrode. The laser ensures efficient, uniform carrier injection into the active layer, suppresses higher-order modes other than the fundamental transverse mode, and thereby promises a high reliability ensuring continuous pulsation under a low threshold current and a low operation voltage with low noise characteristics.
摘要翻译： 在蓝宝石衬底上包含由不同导电类型的半导体层夹持的有源层的氮化物化合物半导体激光器中，在p型和p型的台面型限流结构的侧面形成用于电流阻挡和光限制的聚酰亚胺层 侧电极。 激光器确保有源层中有效均匀的载流子注入，抑制基本横模以外的高次模，从而保证高可靠性，确保在低阈值电流和低噪声特性的低工作电压下连续脉动。
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公开(公告)号：US6031858A
公开(公告)日：2000-02-29
申请号：US925764
申请日：1997-09-09
申请人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
发明人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
CPC分类号： H01S5/32341 , H01S2301/166 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2219 , H01S5/2231 , H01S5/4043 , H01S5/405 , H01S5/4087
摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.
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10.发明授权
公开(公告)号：US6015979A
公开(公告)日：2000-01-18
申请号：US143560
申请日：1998-08-28
CPC分类号： H01L33/025 , H01L33/007
摘要： Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.
摘要翻译： 氮化物系半导体元件包括第一层，形成在第一层上的掩模，并且具有多个开口部分，形成在掩模上的氮化物基化合物半导体层，所述氮化物基化合物半导体层包括具有穿线的第一区域 以这样的方式产生的位错，即在掩模中的多个开口部分的两个相邻的开口部分中的大致中间部分中，多个位错在垂直方向上延伸到掩模的表面，第二区域包括部分 除了中间部分之外并且没有位错，以及形成在半导体层上的期望的元件结构。
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