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    Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
    3.
    发明授权
    Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same 失效
    半导体微针的集合体及其制造方法以及半导体装置及其制造方法

    公开(公告)号：US06489629B1

    公开(公告)日：2002-12-03

    申请号：US09499045

    申请日：2000-02-07

    申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    IPC分类号： H01L2906

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球状晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

    Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
    4.
    发明授权
    Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same 失效
    半导体微针的集合体及其制造方法以及半导体装置及其制造方法

    公开(公告)号：US06734451B2

    公开(公告)日：2004-05-11

    申请号：US10274910

    申请日：2002-10-22

    申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    IPC分类号： H01L2906

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G10H1/0041 ,  G10H7/02 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  Y02E10/547 ,  Y02P70/521

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球状晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

    Method of making aggregate of semiconductor micro-needles
    5.
    发明授权
    Method of making aggregate of semiconductor micro-needles 有权
    制造半导体微针聚集体的方法

    公开(公告)号：US06177291B1

    公开(公告)日：2001-01-23

    申请号：US09499735

    申请日：2000-02-08

    申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

    IPC分类号： H01L2132

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon. each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底上形成二氧化硅膜，然后形成由硅制成的半球状晶粒。 每个都具有非常小的直径，通过LPCVD沉积在其上。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

    Drying etching method
    7.
    发明授权
    Drying etching method 失效
    干燥蚀刻法

    公开(公告)号：US5259922A

    公开(公告)日：1993-11-09

    申请号：US744583

    申请日：1991-08-14

    申请人： Atsuhiro Yamano ,  Tokuhiko Tamaki ,  Masafumi Kubota ,  Kenji Harafuji ,  Noboru Nomura

    发明人： Atsuhiro Yamano ,  Tokuhiko Tamaki ,  Masafumi Kubota ,  Kenji Harafuji ,  Noboru Nomura

    IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/00

    CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/32137

    摘要： A dry etching method of a substrate or layer of a semiconductor or other material which includes the steps of providing a metallic chamber having an anode and a cathode which are spaced from each other and mounting the substrate or layer to be etched on the cathode, and applying a potential from a RF power supply to the cathode so that a plasma is generated between the anode and the cathode to produce a bulk region and sheath regions between the cathode and the anode. The frequency of the RF power supply is set at a level higher than 13.56 MHz under which the substrate or layer is subjected to etching with the ions. A polysilicon, SiN or Al alloy layer can be efficiently etched with a Cl-based etching gas.

    摘要翻译： 一种半导体或其他材料的衬底或层的干蚀刻方法，其包括提供具有阳极和阴极的金属室，所述金属室彼此间隔开并将待蚀刻的衬底或层安装在阴极上，以及 将来自RF电源的电势施加到阴极，使得在阳极和阴极之间产生等离子体，以在阴极和阳极之间产生体积区域和鞘区域。 RF电源的频率设定在高于13.56MHz的水平，在该水平下，用离子对衬底或层进行蚀刻。 可以用Cl基蚀刻气体有效地蚀刻多晶硅，SiN或Al合金层。

    Method and apparatus for generating highly dense uniform plasma by use of a high frequency rotating electric field
    8.
    发明授权
    Method and apparatus for generating highly dense uniform plasma by use of a high frequency rotating electric field 失效
    通过使用高频旋转电场产生高密度均匀等离子体的方法和装置

    公开(公告)号：US5332880A

    公开(公告)日：1994-07-26

    申请号：US40348

    申请日：1993-03-30

    申请人： Masafumi Kubota ,  Kenji Harafuji ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Noboru Nomura ,  Ichiro Nakayama

    发明人： Masafumi Kubota ,  Kenji Harafuji ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Noboru Nomura ,  Ichiro Nakayama

    IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  B23K9/00 ,  H01L21/306

    CPC分类号： H01J37/32091 ,  C23C16/509 ,  H01J37/32165 ,  H01J37/32623 ,  H05H1/46 ,  Y10S977/724 ,  Y10S977/844

    摘要： At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit. Accordingly, there are respectively applied, to the first to fourth lateral electrodes, the high frequency electric powers of which frequencies are equal to one another and of which phases are successively different from one another, and there is excited, in the plasma generating part, a rotational electric field to cause electrons in the plasma generating part to present rotational motions.

    摘要翻译： 在真空下的等离子体产生部分的侧面，第一至第四横向电极被设置成围绕等离子体产生部分。 从第一高频电源向第一横向电极提供高频电力，通过第一延迟电路从第一高频电源向第二横向电极提供高频电力，将高频电力供给至 来自第一高频电源的第三横向电极通过第一延迟电路和第二延迟电路，并且高频电力通过第一和第二延迟电路从第一高频电源提供给第四横向电极;以及 通过第三个延迟电路。 因此，分别向第一至第四横向电极施加频率彼此相等且相位相互不同的高频电力，并且在等离子体产生部分中激发， 使等离子体产生部中的电子产生旋转运动的旋转电场。

    Plasma source for etching
    9.
    发明授权
    Plasma source for etching 失效
    用于蚀刻的等离子体源

    公开(公告)号：US5593539A

    公开(公告)日：1997-01-14

    申请号：US224960

    申请日：1994-04-08

    申请人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

    发明人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

    IPC分类号： H01J37/32 ,  B44C1/22

    CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/32165

    摘要： An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

    摘要翻译： 公开了一种用于产生等离子体的装置。 该装置包括：等离子体室; 成对平行板电极; 以及用于在所述电极对上施加高频功率的电源。 调整高频功率的频率和高频功率之间的相位差，使得等离子体中的每个电子以圆形路径移动。 通过利用形成在平行板电极之间的高频电场中的电子的振荡，旋转或摆线运动的现象，在低压水平下产生致密且高度均匀的等离子体。 该等离子体适用于LSI制造工艺中的蚀刻。

    Plasma source for etching
    10.
    发明授权
    Plasma source for etching 失效
    用于蚀刻的等离子体源

    公开(公告)号：US5330606A

    公开(公告)日：1994-07-19

    申请号：US805864

    申请日：1991-12-10

    申请人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

    发明人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

    IPC分类号： H01J37/32 ,  H01L21/00

    CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/32165

    摘要： An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

    摘要翻译： 公开了一种用于产生等离子体的装置。 该装置包括：等离子体室; 成对平行板电极; 以及用于在所述电极对上施加高频功率的电源。 调整高频功率的频率和高频功率之间的相位差，使得等离子体中的每个电子以圆形路径移动。 通过利用在平行板电极之间形成的高频电场中的电子的振荡，旋转或摆线运动的现象，在低压水平下产生致密且高度均匀的等离子体。 该等离子体适用于在LSI制造工艺中的蚀刻。