摘要:
A flip chip ball grid array package includes a thin die having a die thickness reduced from a wafer thickness to reduce mismatch of a coefficient of thermal expansion between the thin die and a substrate; a plurality of thin film layers formed on the thin die wherein each of the plurality of thin film layers has a coefficient of thermal expansion that is greater than that of the thin die and is less than that of the substrate; and a plurality of wafer bumps formed on the thin die for making electrical contact between the thin die and the substrate.
摘要:
A flip chip ball grid array package includes a thin die having a die thickness reduced from a wafer thickness to reduce mismatch of a coefficient of thermal expansion between the thin die and a substrate; a plurality of thin film layers formed on the thin die wherein each of the plurality of thin film layers has a coefficient of thermal expansion that is greater than that of the thin die and is less than that of the substrate; and a plurality of wafer bumps formed on the thin die for making electrical contact between the thin die and the substrate.
摘要:
An underfill includes a base material and a filler material added to the base material wherein the filler material constitutes a selected percentage by weight of the underfill to provide an optimum balance between interfacial die stress and solder bump strain for next generation, Cu, low-K silicon technology.
摘要:
An integrated circuit die includes a circuit surface and a back surface opposite the circuit surface. An underbump metallurgy is formed on a back surface. A layer of solder is formed on the underbump metallurgy.
摘要:
An integrated circuit package includes an integrated circuit die having a circuit surface and a back surface opposite the circuit surface. A layer of ductile material is deposited on the back surface of the integrated circuit die.
摘要:
A method and apparatus for avoiding dicing chip-outs in integrated circuit die comprises: (a) providing a wafer for forming a plurality of integrated circuit die thereon; (b) forming the plurality of integrated circuit die on the wafer; and (c) forming a saw street between the integrated circuit die on the wafer to relieve cutting stress in the wafer when the integrated circuit die are separated by a dicing saw.
摘要:
A semiconductor package for a die with improved thermal cycling reliability. A first layer of the package provides ball pads dispersed throughout. A second layer of the package provides signal traces. A high stress area associated with the corner of the dies is defined. Preferably the high stress area is defined as two ball pitches away from the corner of the die. Signal traces are routed away from the high stress area and in particular signal traces are routed away from the ball pads associated with the high stress to eliminate the cracks in the routed traces.
摘要:
A method of manufacturing a flip-chip package and a flip-chip package manufactured by such method. In one embodiment, the method includes: (1) mounting a die to a first die, (2) encapsulating the second die with a molding compound and (3) selectively ablating the molding compound based on an expected heat generation of portions of the second die to reduce a thickness of the molding compound proximate the portions.
摘要:
A zero automated electrical testing (ATE) interposer daughter card (IDC) is provided for use in a test apparatus for ATE. Embodiments of the IDC include a first side having a first set of pads for mounting I/O's of a test package; and a second side having a second set of pads coupled to the first set of pads for replicating the first set of pads, wherein the second set of pads is located in area of the interposer card horizontally offset from the first set of pads, such that ATE measurements are obtained by removably inserting only a portion of the interposer card containing the second set of pads into an ATE test socket.
摘要:
A method and apparatus for avoiding dicing chip-outs in integrated circuit die comprises: (a) providing a wafer for forming a plurality of integrated circuit die thereon; (b) forming the plurality of integrated circuit die on the wafer; and (c) forming a saw street between the integrated circuit die on the wafer to relieve cutting stress in the wafer when the integrated circuit die are separated by a dicing saw.