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12 条记录 (耗时 0.027 秒)

    DEVICE FOR PREVENTING EAVESDROPPING THROUGH SPEAKER
    1.
    发明申请
    DEVICE FOR PREVENTING EAVESDROPPING THROUGH SPEAKER 有权
    用于防止通过扬声器进行EAVESDROPPING的设备

    公开(公告)号：US20090093211A1

    公开(公告)日：2009-04-09

    申请号：US12056670

    申请日：2008-03-27

    申请人： Kwang Uk CHU ,  In Ho HWANG ,  Jong Kyu KIM ,  Sang Woo CHO ,  Dae Heon LEE

    发明人： Kwang Uk CHU ,  In Ho HWANG ,  Jong Kyu KIM ,  Sang Woo CHO ,  Dae Heon LEE

    IPC分类号： H04K3/00

    CPC分类号： H04K3/825 ,  H04K3/42 ,  H04K3/43 ,  H04K2203/12

    摘要： Provided is a device for preventing eavesdropping through a speaker. More particularly, a device for preventing eavesdropping by transmitting a jamming signal through a speaker common signal line is provided, the device including: a jamming signal generator for generating a jamming signal comprising a noise signal; an amplifier for amplifying the jamming signal; and a transformer for receiving the amplified jamming signal from the amplifier and outputting the amplified jamming signal to a speaker common signal line. The device may transmit a jamming signal in an audible frequency band to the speaker common signal line, thereby rendering conversations unrecognizable to eavesdroppers when an electrical signal induced from a speaker is detected through the speaker common signal line.

    摘要翻译： 提供了用于防止通过扬声器窃听的设备。 更具体地，提供了一种通过将扬声器公共信号线发送干扰信号来防止窃听的装置，该装置包括：干扰信号发生器，用于产生包括噪声信号的干扰信号; 用于放大干扰信号的放大器; 以及用于从放大器接收放大的干扰信号并将放大的干扰信号输出到扬声器公共信号线的变压器。 设备可以将扬声器公共信号线中的可听频带中的干扰信号发送到扬声器公共信号线，从而当通过扬声器公共信号线检测到从扬声器感应到的电信号时，使得会话无法识别到窃听器。

    METHOD OF FABRICATING LIGHT EMITING DIODE CHIP
    2.
    发明申请
    METHOD OF FABRICATING LIGHT EMITING DIODE CHIP 有权
    制造光二极管芯片的方法

    公开(公告)号：US20110195538A1

    公开(公告)日：2011-08-11

    申请号：US13089544

    申请日：2011-04-19

    申请人： Jun Hee LEE ,  Jong Kyu KIM ,  Yeo Jin YOON

    发明人： Jun Hee LEE ,  Jong Kyu KIM ,  Yeo Jin YOON

    IPC分类号： H01L33/06

    CPC分类号： H01L33/0095 ,  H01L33/20

    摘要： The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.

    摘要翻译： 本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。 该方法包括以下步骤：制备基底; 在所述基板上层叠所述半导体层，所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽，直到基板被暴露，由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。 根据本发明的实施例，形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜，由此与没有倾斜的发光二极管芯片相比，其方向角度变宽。 随着发光二极管芯片的方位角变宽，当使用发光二极管芯片和荧光体制造白色发光器件时，即使荧光体不集中在器件的中心，也可以调整光均匀性。 因此，通过减少由分散在中心部分的荧光体的量增加引起的遮光现象，可以提高整体发光效率。

    LIGHT EMITTING DIODE
    10.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20110215346A1

    公开(公告)日：2011-09-08

    申请号：US13111406

    申请日：2011-05-19

    申请人： Yeo Jin YOON ,  Jong Kyu KIM ,  Jun Hee LEE

    发明人： Yeo Jin YOON ,  Jong Kyu KIM ,  Jun Hee LEE

    IPC分类号： H01L33/62

    CPC分类号： H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.

    摘要翻译： 根据本发明的AC LED包括衬底和至少一个串联阵列，其具有在衬底上串联连接的多个发光单元。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层，由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层，活性层 介于下半导体层和上半导体层之间的下电极，形成在衬底的第一角上露出的下半导体层上的下电极，形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于 相邻另一个发光单元的那些。