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8 条记录 (耗时 0.061 秒)

    Method of fabricating SOI wafer
    1.
    发明授权
    Method of fabricating SOI wafer 有权
    制造SOI晶圆的方法

    公开(公告)号：US6037198A

    公开(公告)日：2000-03-14

    申请号：US139651

    申请日：1998-08-25

    申请人： Kyoung Wan Park ,  Seong Jae Lee ,  Moon Ho Park ,  Min Cheol Shin ,  Sang Chul Oh

    发明人： Kyoung Wan Park ,  Seong Jae Lee ,  Moon Ho Park ,  Min Cheol Shin ,  Sang Chul Oh

    IPC分类号： H01L21/20 ,  H01L21/762 ,  H01C71/00

    CPC分类号： H01L21/76262

    摘要： The present invention is to fabricate SOI wafer whose the silicon layer is very uniform and the impurity concentration is low. The insulating layer, that is, a composite layer of SiO2 and silicon, is grown on oxide substrate by means of a molecular beam epitaxy fabricating method using silicon as an original material in the oxygen atmosphere. The composite layer of the oxide and silicon is grown according to gradual decreasing the pressure of oxygen atmosphere. A top silicon layer of uniform thickness is grown by means of a molecular beam epitaxy fabricating method using only silicon material consecutively on the composite layer.

    摘要翻译： 本发明是制造硅层非常均匀且杂质浓度低的SOI晶片。 通过在氧气氛中使用硅作为原料的分子束外延制造方法，在氧化物衬底上生长绝缘层，即SiO 2和硅的复合层。 氧化物和硅的复合层根据氧气气氛的逐渐降低而生长。 通过在复合层上连续使用硅材料的分子束外延制造方法生长均匀厚度的顶部硅层。

    Superluminescent diode and method of manufacturing the same
    3.
    发明授权
    Superluminescent diode and method of manufacturing the same 有权
    超发光二极管及其制造方法

    公开(公告)号：US07599403B2

    公开(公告)日：2009-10-06

    申请号：US11635195

    申请日：2006-12-07

    申请人： Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

    发明人： Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

    IPC分类号： H01S3/00 ,  H01S5/00

    CPC分类号： H01S5/0265 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/101 ,  H01S5/2063 ,  H01S5/2201 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/4006

    摘要： A 1.55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.

    摘要翻译： 公开了具有激光二极管（LD）区域和半导体光放大器（SOA）区域的1.55μmSLD及其制造方法。 SLD包括：具有LD区域的InP衬底和用于放大从LD区域发射的光的SOA区域; 具有BRS（埋脊条）结构的光波导，其具有形成在InP衬底上并从SOA区延伸到LD区的谐振带图案的有源层; 形成在SOA区域中的有源层上的第一电极，形成在LD区域中的有源层上并与第一电极电隔离的第二电极; 以及插入在第一电极和第二电极之间的电流阻挡区域，以将第一电极和第二电极彼此电隔离。

    System and method for switching channels using tunable laser diodes
    5.
    发明授权
    System and method for switching channels using tunable laser diodes 有权
    使用可调激光二极管切换通道的系统和方法

    公开(公告)号：US07599624B2

    公开(公告)日：2009-10-06

    申请号：US11252401

    申请日：2005-10-17

    申请人： Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

    发明人： Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

    IPC分类号： H04J14/00

    CPC分类号： H04J14/0282 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J2014/0253

    摘要： A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

    摘要翻译： 信道切换功能被添加到作为接入光网络系统的波分复用无源光网络（WDM-PON）系统，并且通过组合宽波长可调激光器和时分复用（TDM）来增加潜在传输速率， 数据结构，并正确使用必要的光学元件。 此外，当光源或阵列波导光栅（AWG）的波长改变时，跟踪波长，并且使用环回网络结构，没有额外的绕行线，传输信号的幅度最大化。 此外，需要较少的热电控制器（TEC）来稳定使用波长可调激光器的光线路终端（OLT）的温度，每个激光电子改变其波长。

    Method for manufacturing semiconductor optical amplifier having planar buried heterostructure
    8.
    发明授权
    Method for manufacturing semiconductor optical amplifier having planar buried heterostructure 有权
    具有平面掩埋异质结构的半导体光放大器的制造方法

    公开(公告)号：US07045374B2

    公开(公告)日：2006-05-16

    申请号：US10844321

    申请日：2004-05-13

    申请人： Dong Hun Lee ,  Eun Deok Sim ,  Ki Soo Kim ,  Moon Ho Park

    发明人： Dong Hun Lee ,  Eun Deok Sim ,  Ki Soo Kim ,  Moon Ho Park

    IPC分类号： H01L21/00

    CPC分类号： H01S5/5009 ,  H01S5/1014 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/3213 ,  H01S2301/173 ,  H01S2301/18

    摘要： Provided is a method for manufacturing a planar buried semiconductor optical amplifier in which a spot size converter with a double-core structure is integrated, comprising the steps of: after growing a lower cladding layer, a lower waveguide layer and an upper cladding layer on a substrate, patterning a portion of thickness of the lower cladding layer, the lower waveguide layer and the upper cladding layer through an etching process using a dielectric layer pattern to form a lower waveguide; growing a planarization layer on the etched portions of the lower cladding layer, the lower waveguide layer and the upper cladding layer to smooth a surface; after removing the dielectric layer pattern, growing a space layer, an upper waveguide layer and a first cladding layer on the overall upper surface; patterning the first cladding layer, the upper waveguide layer and the space layer through the etching process using the dielectric layer pattern to form an upper waveguide having a horizontal taper area; after growing a first current blocking layer on the etched portions of the first cladding layer, the upper waveguide layer and the space layer of the upper waveguide, growing a second current blocking layer on the exposed portion of the first current block layer excluding the dielectric layer pattern; and after removing the dielectric layer pattern, forming a second cladding layer on the overall upper surface, and forming an electrode on the second cladding layer and the substrate, respectively.

    摘要翻译： 提供一种制造平面埋入式半导体光放大器的方法，其中集成了具有双芯结构的光斑尺寸转换器，包括以下步骤：在下敷层，下波导层和上包层上生长 基板，通过使用电介质层图案的蚀刻工艺构图下包层，下波导层和上包层的厚度的一部分，以形成下波导; 在下包层，下波导层和上包层的蚀刻部分上生长平坦化层，以平滑表面; 在去除介电层图案之后，在整个上表面上生长空间层，上波导层和第一包层; 通过使用电介质层图案的蚀刻工艺图案化第一包层，上波导层和空间层，以形成具有水平锥面积的上波导; 在第一包层的蚀刻部分，上波导层和上波导的空间层上生长第一电流阻挡层之后，在除电介质层之外的第一电流块层的暴露部分上生长第二电流阻挡层 模式; 并且在去除介电层图案之后，在整个上表面上形成第二包层，并分别在第二包覆层和基板上形成电极。