公开(公告)号：US20070032013A1

公开(公告)日：2007-02-08

申请号：US11462405

申请日：2006-08-04

申请人： Kyoung-Ryul Yoon ,  Young-Geun Park ,  Ki-Vin Im ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Young-Sun Kim

发明人： Kyoung-Ryul Yoon ,  Young-Geun Park ,  Ki-Vin Im ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Young-Sun Kim

IPC分类号： H01L21/8242

CPC分类号： H01L21/02189 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31641 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/40 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/517 ,  H01L29/7833

摘要： The present invention provides methods of forming a metal oxide layer and methods of forming a capacitor including the same. The methods of forming the metal oxide include forming a thin layer including a metal oxide, such as zirconium oxide, on a substrate and performing a post-treatment on the thin layer at a temperature at which oxygen present in the metal oxide is hindered from being diffused in the thin layer. Consequently, reduced amounts of byproducts are present on the boundary surface of the thin layer and the substrate thereby improving electrical characteristics of the thin layer.

摘要翻译： 本发明提供了形成金属氧化物层的方法和形成包括该金属氧化物层的电容器的方法。 形成金属氧化物的方法包括在衬底上形成包含氧化锆等金属氧化物的薄层，并在金属氧化物中存在的氧被阻碍的温度下在薄层上进行后处理 扩散在薄层。 因此，在薄层和基板的边界表面上存在减少量的副产物，从而改善薄层的电特性。

公开(公告)号：US07485585B2

公开(公告)日：2009-02-03

申请号：US11372117

申请日：2006-03-10

申请人： Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

发明人： Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： H01L21/02205 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

摘要： In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the thin film including hafnium oxide on the substrate. The hafnium precursor may be employed for forming a gate insulation layer of a transistor or a dielectric layer of a capacitor.

摘要翻译： 在形成薄膜的方法和制造栅极结构和电容器的方法中，在基板上设置有包含一个烷氧基和三个氨基的铪前体和氧化剂。 铪前体与氧化剂反应形成包含氧化铪的薄膜。 铪前体可以用于形成电容器的晶体管或电介质层的栅极绝缘层。

公开(公告)号：US20060205198A1

公开(公告)日：2006-09-14

申请号：US11372117

申请日：2006-03-10

申请人： Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

发明人： Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

IPC分类号： H01L21/8242 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/02205 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

摘要： In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the thin film including hafnium oxide on the substrate. The hafnium precursor may be employed for forming a gate insulation layer of a transistor or a dielectric layer of a capacitor.

公开(公告)号：US20050081787A1

公开(公告)日：2005-04-21

申请号：US10951937

申请日：2004-09-28

申请人： Ki-Vin Im ,  Sung-Tae Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  In-Sung Park ,  Eun-Ae Chung ,  Ki-Yeon Park ,  Seung-Hwan Lee

发明人： Ki-Vin Im ,  Sung-Tae Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  In-Sung Park ,  Eun-Ae Chung ,  Ki-Yeon Park ,  Seung-Hwan Lee

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45544

摘要： Methods of supplying a source to a reactor include charging a gaseous source into a charging volume by selectively activating a source charger coupled between the charging volume and a source reservoir. The gaseous source is then supplied from the charging volume into a deposition process reactor by selectively activating a source supplier coupled between the charging volume and the reactor after the gaseous source in the charging volume attains a desired internal pressure. Apparatus for supplying a source and methods and apparatus for depositing an atomic layer are also provided.

摘要翻译： 向反应器供应源的方法包括通过选择性地启动耦合在充电容积和源储存器之间的源极充电器将气态源充电到充电容积中。 然后，在充电容积中的气体源达到期望的内部压力之后，通过选择性地启动耦合在充电容积和反应器之间的源供应器，将气态源从充电容积供应到沉积工艺反应器中。 还提供了用于提供源的装置和用于沉积原子层的方法和装置。

公开(公告)号：US07094712B2

公开(公告)日：2006-08-22

申请号：US10793818

申请日：2004-03-08

申请人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

发明人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.

摘要翻译： 公开了一种使用原子层沉积（ALD）方法形成金属氧化物电介质层，更具体地是HfO 2 电介质层的方法，其中形成一系列薄的中间层并用一个或多个 在下一个中间层之前形成氧化剂和氮。 中间氧化处理减少了从有机金属前体引入到金属氧化物层中的有机污染物的数量，以产生具有改善的电流泄漏特性的电介质层。 如果暴露在高于550℃的温度下，以这种方式形成的电介质层仍然易于结晶，因此随后的半导体制造工艺应当被修改或消除以避免这种温度或限制在这样的温度下的持续时间以保持电介质的性能 材料

公开(公告)号：US06897106B2

公开(公告)日：2005-05-24

申请号：US10713577

申请日：2003-11-12

申请人： Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

发明人： Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

摘要： A semiconductor memory device that includes a composite Al2O3/HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric layer and an HfO2 dielectric layer sequentially formed on the lower electrode, the Al2O3 dielectric layer having a thickness greater than or equal to the HfO2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3 dielectric layer has a thickness of 30-60 Å. The HfO2 dielectric layer has a thickness of 40 Å or less.

摘要翻译： 一种半导体存储器件，其包括层厚度比大于或等于1的复合Al 2 O 3 / HfO 2 电介质层， 并提供一种制造该电容器的方法。 电容器包括下电极，复合电介质层，其包括依次形成在其上的Al 2 O 3 3电介质层和HfO 2 N 2介电层 下电极，具有大于或等于HfO 2 2电介质层的厚度的Al 2 O 3 3 电介质层，以及形成的上电极 在复合介电层上。 Al 2 O 3介电层具有30-60埃的厚度。 HfO 2 2介电层的厚度为40以下。

公开(公告)号：US20050087791A1

公开(公告)日：2005-04-28

申请号：US11009198

申请日：2004-12-08

申请人： Ki-Yeon Park ,  Sung-Tao Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

发明人： Ki-Yeon Park ,  Sung-Tao Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

摘要： A semiconductor memory device that includes a composite Al2O3HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric layer and an HfO2 dielectric layer sequentially formed on the lower electrode, the Al2O3 dielectric layer having a thickness greater than or equal to the HfO2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3 dielectric layer has a thickness of 30-60 Å. The HfO2 dielectric layer has a thickness of 40 Å or less.

摘要翻译： 一种半导体存储器件，其包括层厚度比大于或等于1的复合Al 2 O 3 HfO 2 电介质层，以及 提供了制造电容器的方法。 电容器包括下电极，复合电介质层，其包括依次形成在其上的Al 2 O 3 3介电层和HfO 2 O 3介电层 下电极，具有大于或等于HfO 2 2电介质层的厚度的Al 2 O 3 3 电介质层，以及形成的上电极 在复合介电层上。 Al 2 O 3介电层具有30-60埃的厚度。 HfO 2 2介电层的厚度为40以下。

公开(公告)号：US06946342B2

公开(公告)日：2005-09-20

申请号：US10452979

申请日：2003-06-02

申请人： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

发明人： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/469 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L21/02271 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/40

摘要： A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.

公开(公告)号：US20050070063A1

公开(公告)日：2005-03-31

申请号：US10793818

申请日：2004-03-08

申请人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

发明人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

IPC分类号： C23C16/40 ,  C23C16/455 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.

摘要翻译： 公开了一种使用原子层沉积（ALD）方法形成金属氧化物电介质层，更具体地HfO 2电介质层的方法，其中在下一个中间层之前形成一系列薄的中间层并用一种或多种氧化剂和氮化物进行处理 形成在基板上。 中间氧化处理减少了从有机金属前体引入到金属氧化物层中的有机污染物的数量，以产生具有改善的电流泄漏特性的电介质层。 如果暴露在高于550℃的温度下，以这种方式形成的电介质层仍然易于结晶，因此随后的半导体制造工艺应当被修改或消除以避免这种温度或限制在这样的温度下的持续时间以保持电介质的性能 材料

公开(公告)号：US20050272272A1

公开(公告)日：2005-12-08

申请号：US11198541

申请日：2005-08-05

申请人： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

发明人： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/469 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L21/02271 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/40

摘要： A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.

摘要翻译： 一种半导体器件及其形成方法。 电介质层形成在半导体衬底上或电容器的下电极上。 在电介质层上进行真空退火。 因此，可以有效地除去残留在电介质层中的杂质，并且可以使电介质层致密化。 结果，提高了半导体器件的电特性。 例如，介电层的漏电流特性得到改善，电容增大。