Two-dimensional parity technique to facilitate error detection and correction in memory arrays
    1.
    发明授权
    Two-dimensional parity technique to facilitate error detection and correction in memory arrays 有权
    二维奇偶校验技术,便于存储器阵列中的错误检测和校正

    公开(公告)号:US08122317B1

    公开(公告)日:2012-02-21

    申请号:US12163640

    申请日:2008-06-27

    IPC分类号: H03M13/00

    CPC分类号: H03M13/2909 G06F11/1012

    摘要: The present invention is directed to a two-dimensional parity technique for data to be stored in one or more memory arrays, each of which has various rows and columns of cells. A row of bits in a super bundle is referred to as a row bundle. A super bundle includes numerous rows of row bundles, and corresponding bits in each of the row bundles in the super bundle are aligned in columns. A row check bit is provided for each row bundle in each super bundle. Each row check bit provides a parity bit that is derived from the k bits of the corresponding row bundle. A column check bit is provided for each column in each super bundle. Each column check bit provides a parity bit that is derived from each of the bits in the corresponding column in the super bundle.

    摘要翻译: 本发明涉及用于存储在一个或多个存储器阵列中的数据的二维奇偶校验技术,每个存储器阵列具有不同的行和列的单元。 超级捆绑中的一行位称为行捆绑。 超级捆绑包包括多行行束,并且超级捆绑中的每个行束中的相应位在列中对齐。 每个超级捆绑包中的每个行捆绑包都提供行检查位。 每行检查位提供从相应行束的k位导出的​​奇偶校验位。 每个超级包中的每列都提供列校验位。 每个列校验位提供从超级组中相应列中的每个位导出的奇偶校验位。

    Total ionizing dose radiation hardening using reverse body bias techniques
    2.
    发明授权
    Total ionizing dose radiation hardening using reverse body bias techniques 有权
    使用逆向偏置技术的总电离剂量辐射硬化

    公开(公告)号:US07649216B1

    公开(公告)日:2010-01-19

    申请号:US12117416

    申请日:2008-05-08

    摘要: The present invention relates to radiation hardening by design (RHBD), which employs layout and circuit techniques to mitigate the damaging effects of ionizing radiation. Reverse body biasing (RBB) of N-type metal-oxide-semiconductor (NMOS) transistors may be used to counteract the effects of trapped positive charges in isolation oxides due to ionizing radiation. In a traditional MOS integrated circuit, input/output (I/O) circuitry may be powered using an I/O power supply voltage, and core circuitry may be powered using a core power supply voltage, which is between the I/O power supply voltage and ground. However, in one embodiment of the present invention, the core circuitry is powered using a voltage difference between the core power supply voltage and the I/O power supply voltage. The bodies of NMOS transistors in the core circuitry are coupled to ground; therefore, a voltage difference between the core power supply voltage and ground provides RBB.

    摘要翻译: 本发明涉及通过设计的辐射硬化(RHBD),其采用布局和电路技术来减轻电离辐射的破坏作用。 可以使用N型金属氧化物半导体(NMOS)晶体管的反向体偏置(RBB)来抵消由于电离辐射而在隔离氧化物中捕获的正电荷的影响。 在传统的MOS集成电路中,可以使用I / O电源电压对输入/输出(I / O)电路供电,并且核心电路可以使用核心电源电压供电,该电源电压位于I / O电源 电压和地面。 然而,在本发明的一个实施例中,核心电路使用核心电源电压和I / O电源电压之间的电压差来供电。 核心电路中的NMOS晶体管的主体耦合到地; 因此,核心电源电压和地之间的电压差提供RBB。

    MULTI-MODE RADIATION HARDENED MULTI-CORE MICROPROCESSORS

    公开(公告)号:US20180046580A1

    公开(公告)日:2018-02-15

    申请号:US15672810

    申请日:2017-08-09

    申请人: Lawrence T. Clark

    发明人: Lawrence T. Clark

    IPC分类号: G06F12/0897

    摘要: Systems and methods for multi-mode radiation hardened multi-core microprocessors are disclosed. In some embodiments, a triplicated circuit includes a first core logic, a second core logic, a third core logic, and bus arbitration and control circuitry. The triplicated circuit is configurable to operate in both a Triple-Modular Redundant (TMR) mode of operation and a multi-threaded mode of operation. In some embodiments, there is essentially no overhead in soft mode and low overhead (power only) in hard mode. In most applications, it is expected that portions of missions require very hard systems (e.g., landing) where a failure is catastrophic. However, other portions require essentially no hardening (digital signal processor and signal processing activities) but much better throughput. Consequently, there is a huge opportunity to develop computer processors with low overhead in soft mode and unprecedented hardness in hard mode.

    RADIATION HARDENING ARCHITECTURAL EXTENSIONS FOR A RADIATION HARDENED BY DESIGN MICROPROCESSOR
    4.
    发明申请
    RADIATION HARDENING ARCHITECTURAL EXTENSIONS FOR A RADIATION HARDENED BY DESIGN MICROPROCESSOR 审中-公开
    通过设计微处理器硬化辐射的辐射硬化结构扩展

    公开(公告)号:US20160065243A1

    公开(公告)日:2016-03-03

    申请号:US14837361

    申请日:2015-08-27

    IPC分类号: H03M13/11 G06F9/30 H03M13/00

    摘要: This disclosure relates generally to processors and methods of operating the same. In particular, this disclosure relates to components for correcting soft errors in a processor. In one embodiment, a processor includes an instruction decoder and an exception handler. The instruction decoder is configured to receive one or more soft error correction instructions and decode the one or more soft error correction instructions. Additionally, an exception handler is configured to execute the one or more soft error correction instructions so as to correct one or more soft errors. In this manner, the processor is capable of correcting soft errors that are the result of radiation strikes.

    摘要翻译: 本公开一般涉及其操作处理器和方法。 特别地,本公开涉及用于校正处理器中的软错误的组件。 在一个实施例中,处理器包括指令解码器和异常处理程序。 指令解码器被配置为接收一个或多个软错误校正指令并对一个或多个软错误校正指令进行解码。 此外,异常处理程序被配置为执行一个或多个软错误校正指令,以便校正一个或多个软错误。 以这种方式,处理器能够校正作为辐射打击结果的软错误。

    Sequential state elements in triple-mode redundant (TMR) state machines
    5.
    发明授权
    Sequential state elements in triple-mode redundant (TMR) state machines 有权
    三模冗余(TMR)状态机中的顺序状态元素

    公开(公告)号:US09038012B2

    公开(公告)日:2015-05-19

    申请号:US14304155

    申请日:2014-06-13

    摘要: The disclosure relates generally to triple-redundant sequential state (TRSS) machines formed as integrated circuits on a semiconductor substrate, such as CMOS, and computerized methods and systems of designing the triple-redundant sequential state machines. Of particular focus in this disclosure are sequential state elements (SSEs) used to sample and hold bit states. The sampling and holding of bits states are synchronized by a clock signal thereby allowing for pipelining in the TRSS machines. In particular, the clock signal may oscillate between a first clock state and a second clock state to synchronize the operation of the SSE according to the timing provided by the clock states. The SSEs has a self-correcting mechanism to protect against radiation induced soft errors. The SSE may be provided in a pipeline circuit of a TRSS machine to receive and store a bit state of bit signal generated by combinational circuits within the pipeline circuit.

    摘要翻译: 本公开一般涉及形成为诸如CMOS的半导体衬底上的集成电路的三冗余顺序状态(TRSS)机器,以及设计三重冗余顺序状态机的计算机化方法和系统。 本公开中特别关注的是用于采样和保持位状态的顺序状态元素(SSE)。 位状态的采样和保持由时钟信号同步,从而允许在TRSS机器中流水线化。 具体地,时钟信号可以在第一时钟状态和第二时钟状态之间振荡,以根据由时钟状态提供的定时使SSE的操作同步。 SSEs具有自我纠正机制,可防止辐射诱发的软错误。 SSE可以设置在TRSS机器的管线电路中,以接收和存储由管线电路内的组合电路产生的位信号的位状态。

    Circuit devices and methods having adjustable transistor body bias
    6.
    发明授权
    Circuit devices and methods having adjustable transistor body bias 有权
    具有可调节晶体管体偏置的电路器件和方法

    公开(公告)号:US08995204B2

    公开(公告)日:2015-03-31

    申请号:US13167625

    申请日:2011-06-23

    IPC分类号: G11C7/00 G11C11/412

    CPC分类号: G11C11/412

    摘要: Circuits, integrated circuits devices, and methods are disclosed that may include biasable transistors with screening regions positioned below a gate and separated from the gate by a semiconductor layer. Bias voltages can be applied to such screening regions to optimize multiple performance features, such as speed and current leakage. Particular embodiments can include biased sections coupled between a high power supply voltage and a low power supply voltage, each having biasable transistors. One or more generation circuits can generate multiple bias voltages. A bias control section can couple one of the different bias voltages to screening regions of biasable transistors to provide a minimum speed and lowest current leakage for such a minimum speed.

    摘要翻译: 公开了电路,集成电路器件和方法,其可以包括具有位于栅极下方的屏蔽区域并通过半导体层与栅极分离的可偏置晶体管。 偏置电压可以应用于这样的屏蔽区域以优化多个性能特征,例如速度和电流泄漏。 特定实施例可以包括耦合在高电源电压和低电源电压之间的偏置部分,每个具有可偏置晶体管。 一个或多个发电电路可以产生多个偏置电压。 偏置控制部分可以将不同偏置电压之一耦合到可偏置晶体管的屏蔽区域,以提供用于这种最小速度的最小速度和最小电流泄漏。

    Methods and apparatus to selectively power functional units
    8.
    发明授权
    Methods and apparatus to selectively power functional units 有权
    选择性地为功能单元供电的方法和装置

    公开(公告)号:US08732490B1

    公开(公告)日:2014-05-20

    申请号:US13362358

    申请日:2012-01-31

    IPC分类号: G06F1/32 G06F1/26

    摘要: A processing engine fetches one or more lines of software instructions into an instruction cache. Based on the contents of the cache, potentially needed functional units are identified as functional units that are operable to execute at least one software instruction stored within the instruction cache. Unneeded functional units are identified as functional units that are not operable to execute a software instruction stored within the instruction cache. A power increase is initiated for selected ones of the potentially needed functional units that are determined to be in a low power state. A power decrease is initiated for selected ones of the unneeded functional units that are determined to be in an operable power state.

    摘要翻译: 处理引擎将一行或多行软件指令读取到指令高速缓存中。 基于高速缓存的内容,可能需要的功能单元被识别为可操作以执行存储在指令高速缓存内的至少一个软件指令的功能单元。 不需要的功能单元被识别为不能用于执行存储在指令高速缓存内的软件指令的功能单元。 对被确定为处于低功率状态的潜在需要的功能单元中的所选择的功能单元启动功率增加。 对被确定为处于可操作功率状态的不需要的功能单元中的所选功能单元启动功率减小。

    SRAM CIRCUITS FOR CIRCUIT IDENTIFICATION USING A DIGITAL FINGERPRINT
    9.
    发明申请
    SRAM CIRCUITS FOR CIRCUIT IDENTIFICATION USING A DIGITAL FINGERPRINT 有权
    用于使用数字指纹识别电路的SRAM电路

    公开(公告)号:US20120230087A1

    公开(公告)日:2012-09-13

    申请号:US13415599

    申请日:2012-03-08

    IPC分类号: G11C11/00

    CPC分类号: G11C11/413 G11C5/005

    摘要: Circuitry that includes static random access memory (SRAM) access circuitry and a group of SRAM memory cells is disclosed. A digital fingerprint of the group of SRAM memory cells is determined by using the SRAM access circuitry to force at least a portion of the group of SRAM memory cells into a metastable state and then releasing the portion of the SRAM memory cells. Each SRAM memory cell that was released then selects one of two stable states and the SRAM access circuitry provides a selection profile based on the selections. The digital fingerprint is based on the selection profile.

    摘要翻译: 公开了包括静态随机存取存储器(SRAM)存取电路和一组SRAM存储器单元的电路。 通过使用SRAM访问电路来确定SRAM存储器单元组的数字指纹,以迫使该组SRAM存储器单元的至少一部分进入亚稳态,然后释放SRAM存储单元的一部分。 然后,释放的每个SRAM存储单元选择两种稳定状态之一,SRAM访问电路根据选择提供选择配置文件。 数字指纹是基于选择配置文件。