-
1.发明授权公开(公告)号：US08680553B2
公开(公告)日：2014-03-25
申请号：US13129115
申请日：2009-10-21
申请人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawara
发明人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawara
IPC分类号： H01L33/34
CPC分类号： H01S5/3201 , H01L31/103 , H01L31/1808 , H01S5/0208 , H01S5/021 , H01S5/026 , H01S5/0264 , H01S5/0424 , H01S5/1032 , H01S5/1231 , H01S5/125 , H01S5/3223 , Y02E10/50
摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.
摘要翻译： 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄型半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。
-
2.发明申请公开(公告)号：US20110227116A1
公开(公告)日：2011-09-22
申请号：US13129115
申请日：2009-10-21
申请人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawa
发明人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawa
IPC分类号： H01L33/34 , H01L33/60 , H01L31/028 , H01L31/18
CPC分类号： H01S5/3201 , H01L31/103 , H01L31/1808 , H01S5/0208 , H01S5/021 , H01S5/026 , H01S5/0264 , H01S5/0424 , H01S5/1032 , H01S5/1231 , H01S5/125 , H01S5/3223 , Y02E10/50
摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.
摘要翻译： 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。
-
公开(公告)号：US20120287959A1
公开(公告)日：2012-11-15
申请号：US13521533
申请日：2011-01-28
申请人： Kazuki Tani , Shinichi Saito , Toshiki Sugawara , Youngkun Lee , Digh Hisamoto , Makoto Miura , Katsuya Oda
发明人： Kazuki Tani , Shinichi Saito , Toshiki Sugawara , Youngkun Lee , Digh Hisamoto , Makoto Miura , Katsuya Oda
IPC分类号： H01S5/22
CPC分类号： H01S5/3223 , H01L33/34 , H01L33/62 , H01L2924/0002 , H01S5/0207 , H01S5/021 , H01S5/0424 , H01S5/0425 , H01S5/1231 , H01S5/4031 , H01L2924/00
摘要： A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.
摘要翻译： 通过使用小螺纹位错密度的锗来提供高效率发光的锗发光器件。 通过使用在二氧化硅上形成的锗来获得具有高质量锗发光层的锗激光二极管。 可以使用硅作为n型电极来提供具有高于可由现有的n型锗注入的载流子密度极限的载流子密度的锗激光二极管。
-
公开(公告)号：US20120288228A1
公开(公告)日：2012-11-15
申请号：US13521605
申请日：2010-02-01
申请人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
发明人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
IPC分类号： G02B6/12
CPC分类号： G02B6/122 , B82Y20/00 , G02B2006/12097 , G02B2006/12178 , G02F1/218 , G02F1/2257 , G02F2001/212 , G02F2201/12 , G02F2202/06 , G02F2202/09 , G02F2202/105 , G02F2203/06 , H01S5/021 , H01S5/0424 , H01S5/12 , H01S5/3027 , H01S5/3202
摘要： Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.
摘要翻译： 公开了具有小光损耗并且没有偏振依赖性的硅光波导。 硅光波导形成在其上具有埋入氧化膜的硅衬底上，硅光波导表面的平面取向为（110）面，侧壁的面取向为（111）面， 侧壁的凹部和突起在原子级平坦化。
-
公开(公告)号：US08909021B2
公开(公告)日：2014-12-09
申请号：US13521605
申请日：2010-02-01
申请人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
发明人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
IPC分类号： G02B6/00 , G02B6/36 , H01S5/30 , G02F1/225 , H01S5/02 , G02B6/122 , B82Y20/00 , G02B6/12 , G02F1/21 , H01S5/042 , H01S5/32 , H01S5/12
CPC分类号： G02B6/122 , B82Y20/00 , G02B2006/12097 , G02B2006/12178 , G02F1/218 , G02F1/2257 , G02F2001/212 , G02F2201/12 , G02F2202/06 , G02F2202/09 , G02F2202/105 , G02F2203/06 , H01S5/021 , H01S5/0424 , H01S5/12 , H01S5/3027 , H01S5/3202
摘要： Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.
摘要翻译： 公开了具有小光损耗并且没有偏振依赖性的硅光波导。 硅光波导形成在其上具有埋入氧化膜的硅衬底上，硅光波导表面的平面取向为（110）面，侧壁的面取向为（111）面， 侧壁的凹部和突起在原子级平坦化。
-
公开(公告)号：US07890898B2
公开(公告)日：2011-02-15
申请号：US12024107
申请日：2008-01-31
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： Capacity-gate voltage characteristics of a field-effect transistor having plural gates are measured against a voltage change in each one of the gates for an inverted MOSFET and for an accumulated MOSFET, respectively. These measurements together with numerical simulations provided from a model for quantum effects are used to determine flat band voltages between the plural gates and a channel. Next, an effective normal electric field is calculated as a vector line integral by using a set of flat band voltages for the measured capacity as a lower integration limit. Lastly, mobility depending on the effective normal electric field is calculated from current-gate voltage characteristic measurements and capacity measurements in a source-drain path, and the calculated mobility is substituted into an equation for a current-voltage curve between source and drain.
摘要翻译： 针对反向MOSFET的栅极和积累的MOSFET中的每一个的电压变化分别测量具有多个栅极的场效应晶体管的容量栅极电压特性。 这些测量结果与从量子效应模型提供的数值模拟一起用于确定多个门和通道之间的平带电压。 接下来，通过使用一组用于测量容量的平带电压作为下积分极限，计算有效正常电场作为矢量线积分。 最后，根据源极 - 漏极路径中的电流 - 栅极电压特性测量和电容测量值计算出有效正常电场的迁移率，并将计算的迁移率代入源极和漏极之间的电流 - 电压曲线的方程式。
-
公开(公告)号：US07812398B2
公开(公告)日：2010-10-12
申请号：US12400324
申请日：2009-03-09
CPC分类号： H01L27/1203 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L29/045 , H01L29/7846 , H01L29/785
摘要： A semiconductor device and manufacturing method of the same is provided in which the driving current of a pMOSFET is increased, through a scheme formed easily using an existing silicon process. A pMOSFET is formed with a channel in a direction on a (100) silicon substrate. A compressive stress is applied in a direction perpendicular to the channel by an STI.
摘要翻译： 提供了一种半导体器件及其制造方法，其中通过使用现有的硅工艺容易地形成的方案，增加了pMOSFET的驱动电流。 在（100）硅衬底上形成具有<100>方向的沟道的pMOSFET。 通过STI在垂直于通道的方向上施加压应力。
-
公开(公告)号：US20090132974A1
公开(公告)日：2009-05-21
申请号：US12024107
申请日：2008-01-31
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： Capacity-gate voltage characteristics of a field-effect transistor having plural gates are measured against a voltage change in each one of the gates for an inverted MOSFET and for an accumulated MOSFET, respectively. These measurements together with numerical simulations provided from a model for quantum effects are used to determine flat band voltages between the plural gates and a channel. Next, an effective normal electric field is calculated as a vector line integral by using a set of flat band voltages for the measured capacity as a lower integration limit. Lastly, mobility depending on the effective normal electric field is calculated from current-gate voltage characteristic measurements and capacity measurements in a source-drain path, and the calculated mobility is substituted into an equation for a current-voltage curve between source and drain.
摘要翻译： 针对反向MOSFET的栅极和积累的MOSFET中的每一个的电压变化分别测量具有多个栅极的场效应晶体管的容量栅极电压特性。 这些测量结果与从量子效应模型提供的数值模拟一起用于确定多个门和通道之间的平带电压。 接下来，通过使用一组用于测量容量的平带电压作为下积分极限，计算有效正常电场作为矢量线积分。 最后，根据源极 - 漏极路径中的电流 - 栅极电压特性测量和电容测量值计算出有效正常电场的迁移率，并将计算的迁移率代入源极和漏极之间的电流 - 电压曲线的方程式。
-
公开(公告)号：US20060081836A1
公开(公告)日：2006-04-20
申请号：US11249681
申请日：2005-10-14
IPC分类号： H01L31/109
CPC分类号： H01L21/823425 , H01L21/823412 , H01L21/823807 , H01L21/823814 , H01L29/1054 , H01L29/41758 , H01L29/4238 , H01L29/66659 , H01L29/7835
摘要： In a field effect semiconductor device for high frequency power amplification, it is difficult to achieve size reduction and increased efficiency simultaneously while ensuring voltage withstanding. A further improvement in efficiency is attained by using a strained Si channel for LDMOS at an output stage for high frequency power amplification. Further, the efficiency is improved as much as possible while decreasing a leak current, by optimizing the film thickness of the strained Si layer having a channel region, inactivation of defects and a field plate structure.
摘要翻译： 在用于高频功率放大的场效半导体器件中，难以在确保耐压的同时实现尺寸减小和提高效率。 通过在高频功率放大的输出级使用用于LDMOS的应变Si通道来实现效率的进一步提高。 此外，通过优化具有通道区域的应变Si层的膜厚度，缺陷的失活和场板结构，尽可能地提高效率同时减小漏电流。
-
公开(公告)号：US07531853B2
公开(公告)日：2009-05-12
申请号：US11746230
申请日：2007-05-09
IPC分类号： H01L29/80 , H01L31/112 , H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L27/1203 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L29/045 , H01L29/7846 , H01L29/785
摘要： A semiconductor device and manufacturing method of the same is provided in which the driving current of a pMOSFET is increased, through a scheme formed easily using an existing silicon process. A pMOSFET is formed with a channel in a direction on a (100) silicon substrate. A compressive stress is applied in a direction perpendicular to the channel by an STI.
摘要翻译： 提供了一种半导体器件及其制造方法，其中通过使用现有的硅工艺容易地形成的方案，增加了pMOSFET的驱动电流。 在（100）硅衬底上形成具有<100>方向的沟道的pMOSFET。 通过STI在垂直于通道的方向上施加压应力。
-
-
-
-
-
-
-
-
-
搜索结果
158 条记录 (耗时 0.036 秒)
