摘要:
Enclosed (or at least substantially enclosed) microswitch cavities can be constructed with suitable channels, and in some instances vents, to allow for the transport of fluidic microswitch components to the cavities. This generally allows for fluid transport to cavities that are largely completed. Various techniques, including formation of pressure gradients and electrowetting, can be used to transport fluid along the channels. Additionally, structures and techniques for providing fluid to multiple microswitches and for providing fluid in desired amounts to microswitches are disclosed.
摘要:
A switch comprises a first wafer having a thin-film structure defined thereon, a second wafer having a plurality of features defined therein, and a seal between the first wafer and the second wafer forming a two-wafer structure having a liquid metal microswitch defined therebetween.
摘要:
A micro-machined nozzle includes a substrate having a hole formed on a first side that extends partially through a thickness dimension of the substrate and a nozzle orifice formed on a second opposite side that communicates with the hole. The nozzle orifice has at least a portion of its interior wall serrated. A method of fabricating a micro-machined nozzle includes the steps of etching a first side of a silicon substrate to form a hole that extends partially through a thickness dimension of the substrate and etching a second opposite side of the silicon substrate to form a serrated nozzle orifice that communicates with the hole.
摘要:
A micro-machined nozzle includes a substrate having a hole formed on a first side that extends partially through a thickness dimension of the substrate and a nozzle orifice formed on a second opposite side that communicates with the hole. The nozzle orifice has at least a portion of its interior wall serrated. A method of fabricating a micro-machined nozzle includes the steps of etching a first side of a silicon substrate to form a hole that extends partially through a thickness dimension of the substrate and etching a second opposite side of the silicon substrate to form a serrated nozzle orifice that communicates with the hole.
摘要:
A switch comprises a first wafer having a thin-film structure defined thereon, a second wafer having a plurality of features defined therein, and a seal between the first wafer and the second wafer forming a two-wafer structure having a liquid metal microswitch defined therebetween.
摘要:
Device and method for reducing toxicity of a toxic material in a toxic material containing device. A toxic material containing device has a first chamber containing a toxic material and a second chamber containing a neutralizing material capable of reducing the toxicity of the toxic material when the toxic material and the neutralizing material are combined. A control mechanism enables selective combining of the toxic material and the neutralizing material to provide a combined material that is less toxic than the toxic material. The device and method enable the toxicity of a toxic material in a device, such as liquid mercury in a liquid mercury containing device, to be reduced to a safe level to facilitate safe disposal of the device.
摘要:
A micro-electromechanical systems (MEMS) switch or array is provided. A first substrate (e.g., carrier substrate) includes an electrically conductive substrate region. An electrical isolation layer may be disposed over a first surface of the carrier substrate. Movable actuators may be provided. At least one substrate contact is electrically coupled to at least one of the plurality of movable actuators so that a flow of electrical current is established during an electrically-closed condition of the MEMS switch array. A cover substrate may also be provided and includes an electrically conductive substrate region. The electrically conductive region of the carrier substrate is electrically coupled to the electrically conductive region of the cover substrate to define an electrically conductive path for the flow of electrical current during the electrically-closed condition of the switching array.
摘要:
A device includes a substrate (308) and a metallic layer (336) formed over the substrate (308) with a deposition process for which the metallic layer (336) is characterizable as having a pre-determinable as-deposited defect density. As a result of a fabrication process, the defect density of the metallic layer (336) is reduced relative to the pre-determinable as-deposited defect density of the same layer (336) or another layer having like composition and which is formed under like deposition conditions. In a related method, a substrate (308) is provided and a removable layer (330) is formed over the substrate (308). A metallic layer (336) is formed over the removable layer (330) and is patterned and etched to define a structure over the removable layer (330). The removable layer (330) is removed, and the metallic layer (336) is heated for a time beyond that necessary for bonding of a hermetic sealing cap (340) thereover.
摘要:
A micro-electro-mechanical system (MEMS) current sensor for sensing a magnetic field produced by an electrical current flowing in a conductor includes a first fixed element and a moving element. The moving element is spaced away from the first fixed element and is movable relative to the fixed element responsive to a magnetic field produced by an electrical current flowing in a conductor for providing a mechanical indication of a strength of the magnetic field. The sensor also includes a tunneling current generator for generating a tunneling current between the first fixed element and the moving element and a tunneling current monitor for monitoring a change in the tunneling current responsive to the mechanical indication to provide an indication of a value of the electrical current in the conductor.
摘要:
The present invention relates, in general, to a method for three-dimensional (3D) microfabrication of complex, high aspect ratio structures with arbitrary surface height profiles in metallic materials, and to devices fabricated in accordance with this process. The method builds upon anisotropic deep etching methods for metallic materials previously developed by the inventors by enabling simplified realization of complex, non-prismatic structural geometries composed of multiple height levels and sloping and/or non-planar surface profiles. The utility of this approach is demonstrated in the fabrication of a sloping electrode structure intended for application in bulk micromachined titanium micromirror devices, however such a method could find use in the fabrication of any number of other microactuator, microsensor, microtransducer, or microstructure devices as well.