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1.发明申请Process of making a semiconductor device using multiple antireflective materials 失效制造使用多种抗反射材料的半导体器件的工艺公开(公告)号：US20070196748A1
公开(公告)日：2007-08-23
申请号：US11356027
申请日：2006-02-17
申请人： Marie Angelopoulos , Katherina Babich , Sean Burns , Richard Conti , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina Babich , Sean Burns , Richard Conti , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
IPC分类号： G03G13/00
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译： 一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。 本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。
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2.发明申请公开(公告)号：US20070015082A1
公开(公告)日：2007-01-18
申请号：US11180787
申请日：2005-07-14
申请人： Marie Angelopoulos , Katherina Babich , Sean Burns , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina Babich , Sean Burns , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO 2主链的交联聚合物，发色团和对193nm或157nm辐射基本透明的透明有机基团。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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公开(公告)号：US06730454B2
公开(公告)日：2004-05-04
申请号：US10124087
申请日：2002-04-16
申请人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F700
CPC分类号： H01L21/0276 , G03F7/0045 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
摘要翻译： 存在具有发色团部分和透明部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射硬掩模组合物。 这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。 本发明的组合物有利地用于较短波长的光刻工艺和/或具有最小的残留酸含量。
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公开(公告)号：US06979518B2
公开(公告)日：2005-12-27
申请号：US10727925
申请日：2003-12-04
申请人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
发明人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
IPC分类号： G03F1/32 , C23C14/06 , C23C14/08 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , C23C14/0676 , C23C14/08
摘要： An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.
摘要翻译： 通过由金属，硅，氮和氧制成的光学半透明的膜形成产生透射光的相移的衰减的嵌入式相移光掩模坯料。 加入蚀刻停止层以改善相移层的蚀刻选择性。 通过该方法获得宽范围的光学透射（0.001nm至15％，157nm）。
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公开(公告)号：US06730445B2
公开(公告)日：2004-05-04
申请号：US10303341
申请日：2002-11-22
申请人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
发明人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
IPC分类号： G03F900
CPC分类号： G03F1/32 , C23C14/0676 , C23C14/08
摘要： An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.
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公开(公告)号：US06682860B2
公开(公告)日：2004-01-27
申请号：US10122876
申请日：2002-04-12
申请人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
发明人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
IPC分类号： G03F900
CPC分类号： G03F1/32 , C23C14/0676 , C23C14/08
摘要： An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.
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公开(公告)号：US06514667B2
公开(公告)日：2003-02-04
申请号：US09932002
申请日：2001-08-17
申请人： Marie Angelopoulos , Katherina Babich , Alfred Grill , Scott David Halle , Arpan Pravin Mahorowala , Vishnubhai Vitthalbhai Patel
发明人： Marie Angelopoulos , Katherina Babich , Alfred Grill , Scott David Halle , Arpan Pravin Mahorowala , Vishnubhai Vitthalbhai Patel
IPC分类号： G03F7075
CPC分类号： H01L21/3122 , C23C16/30 , C23C16/32 , C23C16/325 , G03F7/091 , H01L21/02112 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/31633 , H01L21/76832 , H01L23/53295 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.
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8.发明授权Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof 有权Tunabale气相沉积材料作为抗反射涂层，硬掩模和组合抗反射涂层/硬掩模及其制造方法及其应用公开(公告)号：US06316167B1
公开(公告)日：2001-11-13
申请号：US09480442
申请日：2000-01-10
申请人： Marie Angelopoulos , Katherina Babich , Alfred Grill , Scott David Halle , Arpan Pravin Mahorowala , Vishnubhai Vitthalbhai Patel
发明人： Marie Angelopoulos , Katherina Babich , Alfred Grill , Scott David Halle , Arpan Pravin Mahorowala , Vishnubhai Vitthalbhai Patel
IPC分类号： G03F726
CPC分类号： H01L21/3122 , C23C16/30 , C23C16/32 , C23C16/325 , G03F7/091 , H01L21/02112 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/31633 , H01L21/76832 , H01L23/53295 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.
摘要翻译： 一种光刻结构及其制造方法，其具有多个层，其中至少一层是包含具有结构式R：C：H：X的材料的RCHX层，其中R选自Si ，Ge，B，Sn，Fe，Ti及其组合，其中X不存在或选自O，N，S和F中的一种或多种，以及能量活性材料层。 RCHX层可用作硬掩模层，防反射层和硬掩模抗反射层。 可以通过图案化能量活性材料并将图案转移到RCHX层来蒸镀和图案化RCHX层。
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9.发明申请公开(公告)号：US20130017486A1
公开(公告)日：2013-01-17
申请号：US13617634
申请日：2012-09-14
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料和设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本上透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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10.发明授权公开(公告)号：US08293454B2
公开(公告)日：2012-10-23
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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