-
公开(公告)号：US20110025338A1
公开(公告)日：2011-02-03
申请号：US12462354
申请日：2009-08-03
Applicant: Mark J. Willey , Lian Guo , Steven T. Mayer
Inventor： Mark J. Willey , Lian Guo , Steven T. Mayer
IPC: G01N27/06
CPC classification number: G01N27/42
Abstract: The working electrode in the flow channel of a flow-through electrolytic detection cell is preconditioned by flowing a preconditioning electroplating solution with preconditioner species through the flow channel while applying a negative potential. Flow of liquid through the flow channel is rapidly switched from preconditioning solution to a target solution containing an organic target solute to be measured. The transient response of the system resulting from exposure of the working electrode to organic target solute is detected by measuring current density during an initial transient time period. An unknown concentration of target solute is determined by comparing the transient response with one or more transient responses characteristic of known concentrations. A preferred measuring system is operable to switch flow from preconditioning solution to target solution in about 200 milliseconds or less.
Abstract translation: 通过电流检测单元的流动通道中的工作电极通过在施加负电位的情况下通过流动通道流动具有预调节剂种类的预处理电镀溶液来预处理。 通过流动通道的液体流从预处理溶液快速切换到含有待测量的有机靶溶质的目标溶液。 通过在初始瞬变时间段内测量电流密度来检测由工作电极暴露于有机靶溶质而产生的系统的瞬态响应。 通过将瞬态响应与已知浓度特征的一个或多个瞬态响应进行比较来确定目标溶质浓度未知。 优选的测量系统可操作以在大约200毫秒或更短的时间内将流从预处理溶液切换到目标溶液。
-
公开(公告)号：US08372258B2
公开(公告)日：2013-02-12
申请号：US12462354
申请日：2009-08-03
Applicant: Mark J. Willey , Lian Guo , Steven T. Mayer
Inventor： Mark J. Willey , Lian Guo , Steven T. Mayer
CPC classification number: G01N27/42
Abstract: The working electrode in the flow channel of a flow-through electrolytic detection cell is preconditioned by flowing a preconditioning electroplating solution with preconditioner species through the flow channel while applying a negative potential. Flow of liquid through the flow channel is rapidly switched from preconditioning solution to a target solution containing an organic target solute to be measured. The transient response of the system resulting from exposure of the working electrode to organic target solute is detected by measuring current density during an initial transient time period. An unknown concentration of target solute is determined by comparing the transient response with one or more transient responses characteristic of known concentrations. A preferred measuring system is operable to switch flow from preconditioning solution to target solution in about 200 milliseconds or less.
Abstract translation: 通过电流检测单元的流动通道中的工作电极通过在施加负电位的情况下通过流动通道流动具有预调节剂种类的预处理电镀溶液来预处理。 通过流动通道的液体流从预处理溶液快速切换到含有待测量的有机靶溶质的目标溶液。 通过在初始瞬变时间段内测量电流密度来检测由工作电极暴露于有机靶溶质而产生的系统的瞬态响应。 通过将瞬态响应与已知浓度特征的一个或多个瞬态响应进行比较来确定目标溶质浓度未知。 优选的测量系统可操作以在大约200毫秒或更短的时间内将流从预处理溶液切换到目标溶液。
-
3.发明申请公开(公告)号：US20100320081A1
公开(公告)日：2010-12-23
申请号：US12684792
申请日：2010-01-08
Applicant: Steven T. Mayer , David W. Porter , Mark J. Willey
Inventor： Steven T. Mayer , David W. Porter , Mark J. Willey
CPC classification number: H01L21/2885 , C25D3/38 , C25D5/003 , C25D5/02 , C25D5/34 , C25D7/123 , C25D17/001 , C25D21/04 , H01L21/76861 , H01L21/76898
Abstract: Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.
Abstract translation: 公开了预润湿装置的设计和方法。 这些设备的设计和方法用于在将晶片上的金属镀覆在晶片表面之前预先浸湿晶片。 公开的预润湿流体的组合物防止晶片上种子层的腐蚀，并且还改善晶片上特征的填充率。
-
4.发明申请公开(公告)号：US20110284386A1
公开(公告)日：2011-11-24
申请号：US13110488
申请日：2011-05-18
Applicant: Mark J. Willey , Steven T. Mayer
Inventor： Mark J. Willey , Steven T. Mayer
CPC classification number: C25D3/38 , C25D5/022 , C25D7/123 , C25D21/12 , H01L21/2885 , H01L21/76879 , H01L21/76898 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 μm in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.
Abstract translation: 提供了一种用于电镀大量，高纵横比的凹陷特征与铜而不在现场区域中沉积大量铜的方法。 该方法允许以基本无空隙的方式完全填充具有至少约5:1的纵横比（例如至少约10:1）和至少约1μm的宽度的凹陷特征，而不沉积超过5％的铜 场区域（相对于沉积在凹陷特征中的厚度）。 该方法包括将具有一个或多个大的，高纵横比的凹陷特征（例如TSV）的基底与包含铜离子的电解质和被配置用于抑制场区中的铜沉积的有机双态抑制剂（DSI）接触，以及电沉积 在电势控制条件下，电位控制的铜不超过DSI的临界电位。
-
公开(公告)号：US08962085B2
公开(公告)日：2015-02-24
申请号：US12684787
申请日：2010-01-08
Applicant: Steven T. Mayer , David W. Porter , Mark J. Willey
Inventor： Steven T. Mayer , David W. Porter , Mark J. Willey
IPC: C25D5/34 , B05D5/12 , H05K3/00 , B05D3/00 , C25D5/02 , B05D1/02 , B05D1/18 , B23H3/00 , C25D7/12 , H01L21/288 , H01L21/768 , C25D17/00 , C25D21/04 , C25D5/00 , C25D3/38
CPC classification number: H01L21/2885 , C25D3/38 , C25D5/003 , C25D5/02 , C25D5/34 , C25D7/123 , C25D17/001 , C25D21/04 , H01L21/76861 , H01L21/76898
Abstract: Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.
Abstract translation: 公开了预润湿装置的设计和方法。 这些设备的设计和方法用于在将晶片上的金属镀覆在晶片表面之前预先浸湿晶片。 公开的预润湿流体的组合物防止晶片上种子层的腐蚀，并且还改善晶片上特征的填充率。
-
Patent Agency Ranking
公开(公告)号：US20100320609A1
公开(公告)日：2010-12-23
申请号：US12684787
申请日：2010-01-08
Applicant: Steven T. Mayer , David W. Porter , Mark J. Willey
Inventor： Steven T. Mayer , David W. Porter , Mark J. Willey
IPC: H01L21/3205 , H01L21/302 , H01L23/52
CPC classification number: H01L21/2885 , C25D3/38 , C25D5/003 , C25D5/02 , C25D5/34 , C25D7/123 , C25D17/001 , C25D21/04 , H01L21/76861 , H01L21/76898
Abstract: Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.
Abstract translation: 公开了预润湿装置的设计和方法。 这些设备的设计和方法用于在将晶片上的金属镀覆在晶片表面之前预先浸湿晶片。 公开的预润湿流体的组合物防止晶片上种子层的腐蚀，并且还改善晶片上特征的填充率。
-
7.发明授权Through silicon via filling using an electrolyte with a dual state inhibitor 有权通过使用具有双重状态抑制剂的电解质填充硅公开(公告)号：US08992757B2
公开(公告)日：2015-03-31
申请号：US13110488
申请日：2011-05-18
Applicant: Mark J. Willey , Steven T. Mayer
Inventor： Mark J. Willey , Steven T. Mayer
IPC: C25D3/38 , H01L21/768 , H01L21/288 , C25D7/12 , C25D5/02
CPC classification number: C25D3/38 , C25D5/022 , C25D7/123 , C25D21/12 , H01L21/2885 , H01L21/76879 , H01L21/76898 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 μm in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.
Abstract translation: 提供了一种用于电镀大量，高纵横比的凹陷特征与铜而不在现场区域中沉积大量铜的方法。 该方法允许以基本无空隙的方式完全填充具有至少约5:1的纵横比（例如至少约10:1）和至少约1μm的宽度的凹陷特征，而不沉积超过5％的铜 场区域（相对于沉积在凹陷特征中的厚度）。 该方法包括将具有一个或多个大的，高纵横比的凹陷特征（例如TSV）的基底与包含铜离子的电解质和被配置用于抑制场区中的铜沉积的有机双态抑制剂（DSI）接触，以及电沉积 在电势控制条件下，电位控制的铜不超过DSI的临界电位。
-
8.发明申请公开(公告)号：US20130284604A1
公开(公告)日：2013-10-31
申请号：US13869891
申请日：2013-04-24
Applicant: Tighe A. Spurlin , Charles L. Merrill , Ludan Huang , Matthew Thorum , Lee Brogan , James E. Duncan , Frederick D. Wilmot , Marshall R. Stowell , Steven T. Mayer , Haiying Fu , David W. Porter , Shantinath Ghongadi , Jonathan D. Reid , Hyosang S. Lee , Mark J. Willey
Inventor： Tighe A. Spurlin , Charles L. Merrill , Ludan Huang , Matthew Thorum , Lee Brogan , James E. Duncan , Frederick D. Wilmot , Marshall R. Stowell , Steven T. Mayer , Haiying Fu , David W. Porter , Shantinath Ghongadi , Jonathan D. Reid , Hyosang S. Lee , Mark J. Willey
CPC classification number: C25D21/14 , C25D3/38 , C25D17/001 , C25D17/002 , C25D21/12 , C25D21/18
Abstract: Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.
Abstract translation: 公开了将金属电镀到基底上的装置和方法。 电镀装置包括电镀电池和至少一个氧化装置。 电镀电池包括阴极室和阳极室，隔室由金属阳离子通过但防止有机颗粒穿过。 氧化装置（ODD）被配置为将要电镀的金属的阳离子氧化到基底上，该阳离子在电镀期间存在于阳极电解液中。 在一些实施方案中，ODD被实施为碳阳极，其通过电化学方法从阳极电解液中除去Cu（I）。 在其他实施方案中，ODD被实施为氧化装置（OGD）或外加电流阴极保护阳极（ICCP阳极），这两者都增加了阳极电解液溶液中的氧浓度。 还公开了高效电镀的方法。
-
公开(公告)号：US08722539B2
公开(公告)日：2014-05-13
申请号：US13270897
申请日：2011-10-11
Applicant: Jonathan D. Reid , Katie Qun Wang , Mark J. Willey
Inventor： Jonathan D. Reid , Katie Qun Wang , Mark J. Willey
IPC: H01L21/44
CPC classification number: H01L25/50 , C25D3/38 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885 , H01L21/76898 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.
Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。
-
公开(公告)号：US20100041226A1
公开(公告)日：2010-02-18
申请号：US12193644
申请日：2008-08-18
Applicant: Jonathan D. Reid , Katie Qun Wang , Mark J. Willey
Inventor： Jonathan D. Reid , Katie Qun Wang , Mark J. Willey
IPC: H01L21/445 , C25D3/38 , C25D17/00
CPC classification number: H01L25/50 , C25D3/38 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885 , H01L21/76898 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. Low copper concentration and high acidity electroplating solution is used for deposition copper into the through silicon vias.
Abstract translation: 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 低铜浓度和高酸性电镀溶液用于将铜沉积到通孔硅通孔中。
-
-
-
-
-
-
-
-
-
Search Results
13
records
(took 0.025 seconds)
