公开(公告)号：US6104738A

公开(公告)日：2000-08-15

申请号：US894763

申请日：1997-11-13

申请人： Masahiro Kitoh ,  Nobuyuki Otsuka ,  Masato Ishino ,  Yasushi Matsui ,  Yuichi Inaba

发明人： Masahiro Kitoh ,  Nobuyuki Otsuka ,  Masato Ishino ,  Yasushi Matsui ,  Yuichi Inaba

IPC分类号： H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19 ,  H01S3/08

CPC分类号： H01S5/10 ,  H01S2301/18 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/12 ,  H01S5/1206 ,  H01S5/1215 ,  H01S5/1218 ,  H01S5/1225 ,  H01S5/1228 ,  H01S5/20 ,  H01S5/2036 ,  H01S5/2275 ,  H01S5/32391

摘要： In a semiconductor laser device 100, an n-type InGaAsP light confinement layer 2, a multiple quantum well active layer 3, a p-type InGaAsP light confinement layer 4, and a p-type InP cladding layer 5 are formed on an n-type InP substrate 1 to be in a mesa structure extending in stripes along the cavity length direction. Moreover, regions on both sides of this striped mesa are buried with a p-type InP current blocking layer 6 and an n-type InP current blocking layer 7. Furthermore, a p-type InP burying layer 8 and a p-type InGaAsP contact layer 9 are formed thereon. The oscillation wavelength of the semiconductor laser device 100 is around 1.3 .mu.m. The stripe width of the active layer 3 is such that the width W1 at the front end face and the width W2 at the rear end face have a relationship of W1

摘要翻译： PCT No.PCT / JP96 / 03837第 371日期：1997年11月13日 102（e）1997年11月13日PCT PCT 1996年12月26日PCT公布。 出版物WO97 / 24787 日期1997年7月10日在半导体激光装置100中，n型InGaAsP光限制层2，多量子阱活性层3，p型InGaAsP光限制层4和p型InP包覆层5为 在n型InP衬底1上形成为沿着空腔长度方向以条纹延伸的台面结构。 此外，这种条状台面的两侧的区域用p型InP电流阻挡层6和n型InP电流阻挡层7埋设。此外，p型InP掩埋层8和p型InGaAsP接触 层9形成在其上。 半导体激光装置100的振荡波长约为1.3μm。 有源层3的条带宽度使得前端面处的宽度W1和后端面的宽度W2具有W1

公开(公告)号：US6110756A

公开(公告)日：2000-08-29

申请号：US132078

申请日：1998-08-10

申请人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01L29/15 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01L29/155 ,  H01S5/227 ,  H01S5/2205 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434 ,  Y10S148/095

摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.

摘要翻译： 本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层 在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域 浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。

公开(公告)号：US5764682A

公开(公告)日：1998-06-09

申请号：US606455

申请日：1996-02-23

申请人： Masato Ishino ,  Masahiro Kitoh ,  Nobuyuki Otsuka ,  Yasushi Matsui

发明人： Masato Ishino ,  Masahiro Kitoh ,  Nobuyuki Otsuka ,  Yasushi Matsui

IPC分类号： H01L21/00 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

CPC分类号： H01S5/1228 ,  B82Y20/00 ,  H01S5/2022 ,  H01S5/3403 ,  H01S5/3428 ,  H01S5/3434 ,  Y10S148/095

摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.

摘要翻译： 一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。 衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。 量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域 。 光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

公开(公告)号：US5621747A

公开(公告)日：1997-04-15

申请号：US366027

申请日：1994-12-29

申请人： Masahiro Kitoh ,  Nobuyuki Otsuka ,  Masato Ishino ,  Yasushi Matsui

发明人： Masahiro Kitoh ,  Nobuyuki Otsuka ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

CPC分类号： B82Y20/00 ,  H01S5/12 ,  H01S5/3434 ,  H01S2301/06 ,  H01S2302/00 ,  H01S5/06226 ,  H01S5/3407 ,  H01S5/34306

摘要： A multi quantum well semiconductor laser includes an InP substrate and a multi-layered structure formed on the InP substrate, lasing at 1.29 .mu.m to 1.33 .mu.m wavelength, wherein the multi-layered structure includes at least a multi quantum well active layer, the multi quantum well active layer including InGaAsP well layers and InGaAsP barrier layers alternately provided, the InGaAsP barrier layers are lattice matched with the InP substrate, and a bandgap wavelength of the InGaAsP barrier layers is substantially equal to 1.05 .mu.m.

摘要翻译： 多量子阱半导体激光器包括InP衬底和形成在InP衬底上的多层结构，激光在1.29μm至1.33μm波长处，其中多层结构至少包括多量子阱活性层， 包括InGaAsP阱层和InGaAsP势垒层的多量子阱有源层交替设置，InGaAsP势垒层与InP衬底晶格匹配，并且InGaAsP势垒层的带隙波长基本上等于1.05μm。

公开(公告)号：US5856207A

公开(公告)日：1999-01-05

申请号：US667643

申请日：1996-06-20

申请人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01L29/15 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01L29/155 ,  H01S5/227 ,  H01S5/2205 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434 ,  Y10S148/095

摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.

摘要翻译： 本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层 在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域 浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。

公开(公告)号：US5960257A

公开(公告)日：1999-09-28

申请号：US933707

申请日：1997-09-19

申请人： Masato Ishino ,  Masahiro Kitoh ,  Nobuyuki Otsuka ,  Yasushi Matsui

发明人： Masato Ishino ,  Masahiro Kitoh ,  Nobuyuki Otsuka ,  Yasushi Matsui

IPC分类号： H01L21/00 ,  H01S5/12 ,  H01S5/34

CPC分类号： H01S5/1228 ,  B82Y20/00 ,  H01S5/2022 ,  H01S5/3403 ,  H01S5/3428 ,  H01S5/3434 ,  Y10S148/095

摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.

摘要翻译： 一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，其设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。 衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。 量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域 。 光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

公开(公告)号：US5568501A

公开(公告)日：1996-10-22

申请号：US331939

申请日：1994-10-31

申请人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01L29/15 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01L29/155 ,  H01S5/227 ,  H01S5/2205 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434 ,  Y10S148/095

摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.

摘要翻译： 本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层 在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域 浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。

公开(公告)号：US5539766A

公开(公告)日：1996-07-23

申请号：US293987

申请日：1994-08-18

申请人： Masato Ishino ,  Masahiro Kitoh ,  Nobuyuki Otsuka ,  Yasushi Matsui

发明人： Masato Ishino ,  Masahiro Kitoh ,  Nobuyuki Otsuka ,  Yasushi Matsui

IPC分类号： H01L21/00 ,  H01S5/12 ,  H01S5/34 ,  H01S3/08

CPC分类号： H01S5/1228 ,  B82Y20/00 ,  H01S5/2022 ,  H01S5/3403 ,  H01S5/3428 ,  H01S5/3434 ,  Y10S148/095

摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.

摘要翻译： 一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。 衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。 量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域 。 光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

公开(公告)号：US06256331B1

公开(公告)日：2001-07-03

申请号：US09130311

申请日：1998-08-07

申请人： Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

发明人： Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01S319

CPC分类号： H01S5/343 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/18311 ,  H01S5/2275 ,  H01S5/32 ,  H01S5/3235 ,  H01S5/32375 ,  H01S5/34306 ,  H01S5/34346 ,  H01S2304/04

摘要： The semiconductor laser device of the present invention includes a GaAs substrate and a multi-layer structure formed on the GaAs substrate. The multi-layer structure includes an active layer for emitting light. The active layer includes an InNxAsyP1−x−y (where 0

摘要翻译： 本发明的半导体激光器件包括GaAs衬底和形成在GaAs衬底上的多层结构。 多层结构包括用于发光的有源层。 有源层包括与GaAs衬底晶格匹配的InNxAsyP1-x-y（其中0

公开(公告)号：US6151351A

公开(公告)日：2000-11-21

申请号：US534959

申请日：1995-09-28

申请人： Masahiro Kito ,  Masato Ishino ,  Nobuyuki Otsuka ,  Yasushi Matsui ,  Shinji Nakamura

发明人： Masahiro Kito ,  Masato Ishino ,  Nobuyuki Otsuka ,  Yasushi Matsui ,  Shinji Nakamura

IPC分类号： H01L21/205 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/125 ,  H01S5/20 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343 ,  H01S3/085 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01L21/02392 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/0265 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/06256 ,  H01S5/1231 ,  H01S5/2077 ,  H01S5/2081 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/32391 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/34373

摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.

摘要翻译： 在分布式反馈半导体激光器中包括InP衬底和形成在InP衬底的主表面上的多层结构，该多层结构至少包括用于发射激光的有源层和用于激光的分布反馈的周期性结构 并且周期性结构包括多个半导体区域，每个半导体区域在垂直于InP衬底的主表面的方向上具有三角形横截面并且平行于分布式反馈半导体激光器的腔长度，三角形横截面朝向InP 基质。