LIQUID CRYSTAL DISPLAY DEVICE
    6.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 有权
    液晶显示装置

    公开(公告)号:US20130107152A1

    公开(公告)日:2013-05-02

    申请号:US13807405

    申请日:2011-04-20

    申请人: Hiroshi Okumura

    发明人: Hiroshi Okumura

    IPC分类号: G02F1/133

    摘要: A liquid crystal display device (1) includes: a plurality of groups of scanning lines (Gia) and (Gib) via which gate signals are outputted to a plurality of pixels (PIX); and scanning line driving circuits (5a) and (5b) which generate the gate signals and which are disposed for each separate one of a plurality of groups of scanning lines (Gia) and (Gib), the liquid crystal display device (1) further including potential control circuits (15a) and (15b), placed in front of the scanning line driving circuits (5a) and (5b), respectively which incline, for each separate one of the groups of scanning lines (Gia) and (Gib), falling edges of high-potential signals (VGH1) and (VGH2) in accordance with which the gate signals are generated and which are composed of pulse waves. This prevents luminance unevenness from occurring in each display region.

    摘要翻译: 液晶显示装置(1)包括:多个扫描线组(Gia)和(Gib)组,通过该组扫描线将栅极信号输出到多个像素(PIX); 和扫描线驱动电路(5a)和(5b),所述扫描线驱动电路(5a)和(5b)产生所述栅极信号,并且被设置用于多组扫描线(Gia)和(Gib)中的每一个分离的所述液晶显示装置(1) 包括对于扫描线组(Gia)和(Gib)中的每一个分别放置在扫描线驱动电路(5a)和(5b)的前面的电位控制电路(15a)和(15b) ,根据其生成栅极信号并由脉冲波组成的高电位信号(VGH1)和(VGH2)的下降沿。 这防止了在每个显示区域中发生亮度不均匀。

    Thin film transistor, thin film transistor subsrate, electronic apparatus and process for producing polycrystalline semiconductor thin film
    7.
    发明申请
    Thin film transistor, thin film transistor subsrate, electronic apparatus and process for producing polycrystalline semiconductor thin film 有权
    薄膜晶体管,薄膜晶体管,电子设备及制造多晶半导体薄膜的工艺

    公开(公告)号:US20060246632A1

    公开(公告)日:2006-11-02

    申请号:US10558073

    申请日:2004-03-15

    申请人: Hiroshi Okumura

    发明人: Hiroshi Okumura

    摘要: A TFT and the like capable of realizing performances such as a low threshold voltage value, high carrier mobility and a low leak current easily. A TFT consists of a polycrystalline Si film having a small heat capacity part and a large heat capacity part, and the small heat capacity part is used at least as a channel part. The polycrystalline Si film is formed of a crystal grain film through laser annealing of an energy density with which the small heat capacity part melts completely but the large heat capacity part does not melt completely. Since the channel part is formed of large crystal grains grown from the boundaries between the small heat capacity part and the large heat capacity parts, it is possible to realize performances such as a low threshold voltage value, high carrier mobility and a low leak current by using a typical laser annealing device.

    摘要翻译: 能够容易地实现低阈值电压值,高载流子迁移率和低泄漏电流等性能的TFT等。 TFT由具有小热容部分和大热容部分的多晶Si膜组成,并且小热容部分至少用作通道部分。 多晶硅膜通过激光退火由能量密度形成,其中小热量部分完全熔化,但是大的热容部分不会完全熔化。 由于通道部分由从小热容部分和大热容部分之间的边界生长的大晶粒形成,所以可以通过以下方式实现诸如低阈值电压值,高载流子迁移率和低泄漏电流的性能 使用典型的激光退火装置。

    Liquid-crystal display device and method of fabricating the same

    公开(公告)号:US07123337B2

    公开(公告)日:2006-10-17

    申请号:US11110081

    申请日:2005-04-19

    IPC分类号: G02F1/1335 G02F1/1368

    摘要: A LCD device is provided. On the input side, the collimated-light generator generates collimated light from incident light and then, the first polarizer plate of the first polarized-light controller generates first polarized light from the collimated light. The first quarter wavelength plate of the first polarized-light controller generates second polarized light from the first polarized light. The second polarized light thus generated passes through the liquid crystal layer to reach the output side. On the output side, the second polarized light passes through the second quarter wavelength plate of the second polarized-light controller and the second quarter wavelength plate thereof. Thus, the polarization state of the second polarized light is returned to its original one.

    Liquid-crystal display device and method of fabricating the same
    9.
    发明申请
    Liquid-crystal display device and method of fabricating the same 有权
    液晶显示装置及其制造方法

    公开(公告)号:US20050190318A1

    公开(公告)日:2005-09-01

    申请号:US11110081

    申请日:2005-04-19

    摘要: A LCD device is provided. On the input side, the collimated-light generator generates collimated light from incident light and then, the first polarizer plate of the first polarized-light controller generates first polarized light from the collimated light. The first quarter wavelength plate of the first polarized-light controller generates second polarized light from the first polarized light. The second polarized light thus generated passes through the liquid crystal layer to reach the output side. On the output side, the second polarized light passes through the second quarter wavelength plate of the second polarized-light controller and the second quarter wavelength plate thereof. Thus, the polarization state of the second polarized light is returned to its original one.

    摘要翻译: 提供LCD装置。 在输入侧,准直光发生器从入射光产生准直光,然后第一偏振光控制器的第一偏振板从准直光产生第一偏振光。 第一偏振光控制器的第一四分之一波长板产生来自第一偏振光的第二偏振光。 这样产生的第二偏振光通过液晶层到达输出侧。 在输出侧,第二偏振光通过第二偏振光控制器的第二四分之一波长板和第二偏振光控制器的第二四分之一波长板。 因此,第二偏振光的偏振状态返回到原来的偏振态。

    Method and apparatus for irradiation of a pulse laser beam
    10.
    发明授权
    Method and apparatus for irradiation of a pulse laser beam 有权
    用于照射脉冲激光束的方法和装置

    公开(公告)号:US06372039B1

    公开(公告)日:2002-04-16

    申请号:US09273489

    申请日:1999-03-22

    IPC分类号: C30B2802

    摘要: A method and device for irradiating a pulse laser beam having a linear shape and a rectangular shape beam spot onto a non-single crystal semiconductor thin film. The method includes scanning the pulse laser beam so that previous and next beam spots are partially overlapped. The laser beam has a profile which includes: a first beam profile region having a first energy density which is lower than a micro-crystallization threshold value Ea of an amorphous semiconductor for forming a polycrystallization region; a second beam profile region having a second energy density which is not lower than the micro-crystallization threshold value Ea and is lower than a micro-crystallization threshold value Ep of a polycrystalline semiconductor for forming a first micro-polycrystallization region from an amorphous semiconductor region; and a third beam profile region having a third energy density which is not lower than the micro-crystallization threshold value Ep for forming a second micro-polycrystallization region from a polycrystalline semiconductor region.

    摘要翻译: 一种用于将具有线性形状和矩形形状的光斑的脉冲激光束照射到非单晶半导体薄膜上的方法和装置。 该方法包括扫描脉冲激光束,使得前一个和下一个光束点部分重叠。 激光束具有轮廓,该轮廓包括:具有低于用于形成多晶化区域的非晶半导体的微结晶阈值Ea的第一能量密度的第一光束轮廓区域; 第二光束轮廓区域,其具有不低于微结晶阈值Ea的第二能量密度,并且低于用于从非晶半导体区域形成第一微多晶结晶区域的多晶半导体的微结晶阈值Ep ; 以及具有不低于用于形成来自多晶半导体区域的第二微多晶结晶区域的微结晶阈值Ep的第三能量密度的第三光束轮廓区域。