公开(公告)号：US5201990A

公开(公告)日：1993-04-13

申请号：US704523

申请日：1991-05-23

申请人： Mei Chang ,  Ashok Sinha ,  Turgut Sahin ,  Alfred Mak ,  Cissy Leung

发明人： Mei Chang ,  Ashok Sinha ,  Turgut Sahin ,  Alfred Mak ,  Cissy Leung

IPC分类号： C23C16/44 ,  C23G5/00 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768

CPC分类号： C23G5/00 ,  C23C16/4404 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/321 ,  H01L21/76877

摘要： A process is described for inhibiting the vaporization or sublimation of aluminum base alloy surfaces when exposed to temperatures in excess of 400.degree. C. in a vacuum chamber used for the processing of semiconductor wafers. The process comprises treating such aluminum base alloy surfaces with a plasma comprising a nitrogen-containing gas selected from the group consisting of nitrogen and ammonia. When nitrogen gas is used, the plasma must also contain hydrogen gas. When the vacuum chamber being treated is intended to be used for the deposition of tungsten, the maximum flow of the nitrogen-containing gas into the chamber for the initial 10 seconds of the treatment process must be controlled to avoid impairment of the subsequent tungsten depositions in the chamber. After the treatment step, the cleaned and treated aluminum surface is preferably passivated with nitrogen (N.sub.2) gas.

摘要翻译： 描述了在用于处理半导体晶片的真空室中暴露于超过400℃的温度时，抑制铝基合金表面的蒸发或升华的方法。 该方法包括用包含选自氮和氨的含氮气体的等离子体处理这种铝基合金表面。 当使用氮气时，等离子体也必须含有氢气。 当正在处理的真空室用于沉积钨时，必须控制处理过程最初10秒内进入室内的含氮气体的最大流量，以避免随后的钨沉积的损害 房间。 在处理步骤之后，清洁和处理的铝表面优选用氮气（N 2）钝化。

公开(公告)号：US06251190B1

公开(公告)日：2001-06-26

申请号：US09657880

申请日：2000-09-08

申请人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

发明人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

IPC分类号： C23C1600

CPC分类号： H01L29/66583 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L21/76843 ,  H01L29/4941

摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

摘要翻译： 通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。 通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。 在沉积之前，用氢等离子体预处理晶片以提高粘附性。 钨沉积工艺可以使用六氟化钨和氢气进行CVD。 包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。 在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

公开(公告)号：US06206967B1

公开(公告)日：2001-03-27

申请号：US09594234

申请日：2000-06-14

申请人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Dennis Sauvage

发明人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Dennis Sauvage

IPC分类号： B05C1100

CPC分类号： C23C16/0281 ,  C23C16/14 ,  H01L21/28556

摘要： A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate. In a preferred embodiment, the flow of the tungsten-containing source is stopped along with the flow of the group III or V hydride and after a period of between 5 and 30 seconds, the flow of the tungsten-containing source is restarted when the pressure is in the deposition zone is increased to the second pressure level.

摘要翻译： 用于在基板上沉积钨膜的多步化学气相沉积工艺。 沉积工艺的第一步包括成核步骤，其中包含含钨源，III或V族氢化物和还原剂的工艺气体在保持沉积区的同时流入衬底处理室的沉积区 处于或低于第一压力水平。 在该第一沉积阶段期间，其它工艺变量被保持在适于将第一层钨膜沉积在衬底上的条件下。 接下来，在第一阶段之后的第二沉积阶段期间，停止将III或V族氢化物流入沉积区的流动，之后，沉积区中的压力增加到高于第一压力水平的第二压力和其它 工艺参数保持在适合于在衬底上沉积第二层钨膜的条件下。 在一个优选的实施方案中，随着III或V族氢化物的流动停止含钨源的流动，并且在5至30秒之间的时间段内，当含有钨的源的流量在压力 在沉积区中增加到第二压力水平。

公开(公告)号：US6162715A

公开(公告)日：2000-12-19

申请号：US114839

申请日：1998-07-14

申请人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

发明人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/49 ,  H01L21/3205

CPC分类号： H01L29/66583 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L21/76843 ,  H01L29/4941

摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

摘要翻译： 通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。 通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。 在沉积之前，用氢等离子体预处理晶片以提高粘附性。 钨沉积工艺可以使用六氟化钨和氢气进行CVD。 包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。 在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

公开(公告)号：US6099904A

公开(公告)日：2000-08-08

申请号：US982844

申请日：1997-12-02

申请人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Dennis Sauvage

发明人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Dennis Sauvage

IPC分类号： C23C16/02 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  C23C16/08

CPC分类号： C23C16/0281 ,  C23C16/14 ,  H01L21/28556

摘要： A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate. In a preferred embodiment, the flow of the tungsten-containing source is stopped along with the flow of the group III or V hydride and after a period of between 5 and 30 seconds, the flow of the tungsten-containing source is restarted when the pressure is in the deposition zone is increased to the second pressure level.

摘要翻译： 用于在基板上沉积钨膜的多步化学气相沉积工艺。 沉积工艺的第一步包括成核步骤，其中包含含钨源，III或V族氢化物和还原剂的工艺气体在保持沉积区的同时流入衬底处理室的沉积区 处于或低于第一压力水平。 在该第一沉积阶段期间，其它工艺变量被保持在适于将第一层钨膜沉积在衬底上的条件下。 接下来，在第一阶段之后的第二沉积阶段期间，停止将III或V族氢化物流入沉积区的流动，之后，沉积区中的压力增加到高于第一压力水平的第二压力和其它 工艺参数保持在适合于在衬底上沉积第二层钨膜的条件下。 在一个优选的实施方案中，随着III或V族氢化物的流动停止含钨源的流动，并且在5至30秒之间的时间段内，当含有钨的源的流量在压力 在沉积区中增加到第二压力水平。

公开(公告)号：US5449410A

公开(公告)日：1995-09-12

申请号：US98538

申请日：1993-07-28

申请人： Mei Chang ,  Cissy Leung

发明人： Mei Chang ,  Cissy Leung

IPC分类号： H05H1/46 ,  C23C16/02 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32862 ,  H01J2237/0206 ,  H01J2237/022

摘要： A plasma processing apparatus has a chamber with an open top and a cover plate extending across the open top of the chamber. The cover plate has an opening therethrough. An annular shield of an electrical insulating material is secured to the cover plate around the opening and extends partially across the opening. An aluminum showerhead is within the shield and has holes therethrough through which a gas can pass into the chamber. The showerhead is connected to a source of RF voltage to provide a flow of RF power between the showerhead and an electrode within the chamber. The shield has a plurality of openings therethrough which allows the RF power to flow through the openings from the showerhead to the electrode in the event that the showerhead becomes coated with particles of an insulating material.

摘要翻译： 等离子体处理装置具有一个具有开口顶部的腔室和一个延伸穿过腔室的开口顶部的盖板。 盖板具有穿过其中的开口。 电绝缘材料的环形屏蔽件围绕开口固定到盖板并且部分地延伸穿过开口。 铝制喷头位于屏蔽内，并具有穿过其中的孔，气体可通过该孔进入腔室。 淋浴头连接到RF电压源，以在淋浴喷头和腔室内的电极之间提供RF功率流。 屏蔽件具有多个穿过其中的开口，在喷头变得被绝缘材料的颗粒涂覆的情况下，允许RF功率从喷头流过电极。

公开(公告)号：US5075256A

公开(公告)日：1991-12-24

申请号：US398239

申请日：1989-08-25

申请人： David N. Wang ,  Lawrence C. Lei ,  Mei Chang ,  Cissy Leung

发明人： David N. Wang ,  Lawrence C. Lei ,  Mei Chang ,  Cissy Leung

IPC分类号： C23F4/00 ,  C23C16/44 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/0209 ,  H01L21/67028 ,  Y10S148/051 ,  Y10S438/963

摘要： A method and apparatus are disclosed for removing one or more materials deposited on the backside and end edges of a semiconductor wafer which comprises urging the front side of the wafer against a faceplate in a vacuum chamber; flowing one or more gases through a space maintained between the front side of the wafer and the faceplate; and forming a plasma in a gap maintained between the backside of the wafer and susceptor to remove materials deposited on the backside and end edge of the wafer; the gas flowing through the space between the front side of the wafer and the faceplate acting to prevent the plasma from removing materials on the front side of the wafer.In a preferred embodiment, the front side of the wafer is spaced from the faceplate by providing a generally circular recess in the faceplate having a depth corresponding to the desired spacing and having a diameter larger than the diameter of the wafer with spacing means in the recessed area to engage portions of the wafer to permit gas to flow through the recess and around the end edge of the wafer to inhibit removal of materials from the front surface of the wafer by the plasma.

公开(公告)号：US5213650A

公开(公告)日：1993-05-25

申请号：US759319

申请日：1991-09-13

申请人： David N. Wang ,  Lawrence C. Lei ,  Mei Chang ,  Cissy Leung

发明人： David N. Wang ,  Lawrence C. Lei ,  Mei Chang ,  Cissy Leung

IPC分类号： H01L21/00 ,  H01L21/3065

CPC分类号： H01L21/67028 ,  H01L21/3065

摘要： An apparatus is disclosed for removing one or more materials deposited on the backside and end edges of a semiconductor wafer which includes means for urging the front side of the wafer against a faceplate in a vacuum chamber; means for flowing one or more gases through a space maintained between the front side of the wafer and the faceplate; and means for forming a plasma in a gap maintained between the backside of the wafer and susceptor to remove materials deposited on the backside and end edge of the wafer; the gas flowing through the space between the front side of the wafer and the faceplate acting to prevent the plasma from removing materials on the front side of the wafer. In a preferred embodiment, the front side of the wafer is spaced from the faceplate by providing a generally circular recess in the faceplate having a depth corresponding to the desired spacing and having a diameter larger than the diameter of the wafer with spacing means in the recessed area to engage portions of the wafer to permit gas to flow through the recess and around the end edge of the wafer to inhibit removal of materials from the front surface of the wafer by the plasma.

摘要翻译： 公开了一种用于去除沉积在半导体晶片的背侧和端边缘上的一种或多种材料的装置，其包括用于将晶片的前侧抵靠真空室中的面板推动的装置; 用于使一种或多种气体流过保持在晶片的前侧和面板之间的空间的装置; 以及用于在保持在晶片的背面和基座之间的间隙中形成等离子体以去除沉积在晶片的背侧和端边缘上的材料的装置; 流过晶片前侧和面板之间的空间的气体用于防止等离子体去除晶片前侧上的材料。 在优选实施例中，晶片的前侧通过在面板中设置大致圆形的凹槽而与面板间隔开，该凹槽具有对应于期望间隔的深度，并且具有大于具有间隔装置的凹槽中晶片直径的直径 区域以接合晶片的部分，以允许气体流过凹槽并围绕晶片的端边缘，以阻止通过等离子体从晶片的前表面去除材料。

公开(公告)号：US5028565A

公开(公告)日：1991-07-02

申请号：US398653

申请日：1989-08-25

申请人： Mei Chang ,  Cissy Leung ,  David N. Wang ,  David Cheng

发明人： Mei Chang ,  Cissy Leung ,  David N. Wang ,  David Cheng

IPC分类号： C23C16/06 ,  C23C16/08 ,  C23C16/22 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32051 ,  Y10S148/025

摘要： An improved process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvements comprise depositing tungsten on the semiconductor wafer in the presence of nitrogen gas to improve the reflectivity of the surface of the resulting layer of tungsten; maintaining the vacuum chamber at a pressure of from about 20 to 760 Torr to improve the deposition rate of the tungsten, as well as to improve the reflectivity of the tungsten surface; and, when needed, the additional step of forming a nucleation layer on the semiconductor layer prior to the step of depositing tungsten on the semiconductor wafer to improve the uniformity of the deposited tungsten layer.

公开(公告)号：US4960488A

公开(公告)日：1990-10-02

申请号：US455799

申请日：1989-12-19

申请人： Kam S. Law ,  Cissy Leung ,  Ching C. Tang ,  Kenneth S. Collins ,  Mei Chang ,  Jerry Y. K. Wong ,  David Nin-Kou Wang

发明人： Kam S. Law ,  Cissy Leung ,  Ching C. Tang ,  Kenneth S. Collins ,  Mei Chang ,  Jerry Y. K. Wong ,  David Nin-Kou Wang

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/314 ,  H01L21/316

CPC分类号： C23C16/45565 ,  C23C16/402 ,  C23C16/44 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/31604 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

摘要： A process for cleaning a reactor chamber both locally adjacent the RF electrodes and also throughout the chamber and the exhaust system to the including components such as the throttle valve. Preferably, a two-step continuous etch sequence is used in which the first step uses relatively high pressure, close electrode spacing and fluorocarbon gas chemistry for etching the electodes locally and the second step uses relatively lower pressure, farther electrode spacing and fluorinated gas chemistry for etching throughout the chamber and exhaust system. The local and extended etch steps may be used separately as well as together.

摘要翻译： 用于清洁反射室的方法，所述反应室局部地邻近RF电极以及整个室和排气系统到包括诸如节流阀的部件。 优选地，使用两步连续蚀刻序列，其中第一步骤使用相对高的压力，紧密的电极间距和碳氟化合物气体化学物质来局部蚀刻电极，并且第二步骤使用相对较低的压力，更远的电极间距和氟化气体化学 蚀刻整个腔室和排气系统。 本地和延长的蚀刻步骤可以单独使用和一起使用。