摘要:
A semiconductor component includes a plastic housing including: plastic outer surfaces; lower outer contact surfaces arranged on an underside of the housing; upper outer contact surfaces arranged on a top side of the housing that is opposite the underside; and outer interconnects electrically connecting the lower outer contact surfaces to the upper outer contact surfaces, the outer interconnects including a layer of solder arranged on conduction paths along an outer contour of the housing.
摘要:
For the vertical electrical connection of a number of components, an electronic structure with at least two components has solderable connecting elements, which include at least one socket element and a solder ball stacked on the socket element. The socket element has a cylindrical core of an electrically conducting first material with a lateral surface, a bottom surface and a top surface. The core is surrounded with a cladding of an electrically insulating second material in such a way that the lateral surface of the core is covered by the cladding and the top surface and the bottom surface are kept free of the cladding.
摘要:
An electronic circuit in a package-on-package configuration includes: a lower subassembly with a first electronic element, a first wiring carrier, a first housing with a first redistribution layer and an arrangement of solder balls disposed on the first redistribution layer and an upper subassembly with a second electronic element mounted on the lower subassembly. A method for producing the electronic circuit in a package-on-package configuration includes: adhering an upper side of the first electronic element to an underside of the first redistribution layer via a radiation-crosslinking thermoplastic adhesive.
摘要:
A structure of joining material is applied to the back surfaces of semiconductor chips in manufacturing semiconductor devices. The joining material is applied, in finely metered and structured form via a joining material jet appliance, to the back surfaces of the semiconductor chips of a divided semiconductor wafer.
摘要:
A structure of joining material is applied to the back surfaces of semiconductor chips in manufacturing semiconductor devices. The joining material is applied, in finely metered and structured form via a joining material jet appliance, to the back surfaces of the semiconductor chips of a divided semiconductor wafer.
摘要:
A method for coating a structure that includes at least one semiconductor chip involves electrostatically depositing coating particles on the areas of the structure to be coated. The coating particles are first applied to a carrier and the latter is electrostatically charged with the coating particles. The structure including at least one semiconductor chip is charged electrostatically to a polarity opposite to the carrier. The carrier and/or the structure are then moved towards one another in the direction of an area of the structure to be coated until the coating particles jump to the areas of the structure to be coated and adhere there. The coating particles are liquefied by heating the area with coating particles to form a coating.
摘要:
The invention relates to a method in which components (101, 102) are provided, movement elements (104) are in each case applied to surfaces of a number of the components (101), and the components (101, 102) are stacked, so that one or a plurality of the movement elements (104) are situated between adjacent components (101, 102) and the components (101, 102) are held in their position by connecting elements (103).
摘要:
A semiconductor component includes a plastic housing including: plastic outer surfaces; lower outer contact surfaces arranged on an underside of the housing; upper outer contact surfaces arranged on a top side of the housing that is opposite the underside; and outer interconnects electrically connecting the lower outer contact surfaces to the upper outer contact surfaces, the outer interconnects including a layer of solder arranged on conduction paths along an outer contour of the housing.
摘要:
A semiconductor stack and a semiconductor base device with a wiring substrate and an intermediate wiring board for a semiconductor device stack is disclosed. In one embodiment, a semiconductor chip is arranged between the intermediate wiring board and the wiring substrate which is electrically connected by way of the wiring substrate on the one hand to external contacts on the underside of the wiring substrate and on the other hand to contact terminal areas in the edge regions of the wiring substrate. The intermediate wiring board has angled-away external flat conductors, which are electrically connected in the contact terminal areas of the wiring board. Furthermore, on the upper side of the intermediate wiring board, arranged on the free ends of the internal flat conductors are external contact terminal areas, which correspond in size and arrangement to external contacts of a semiconductor device to be stacked.
摘要:
A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.