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    Laminated upper cladding structure for a light-emitting device
    1.
    发明授权
    Laminated upper cladding structure for a light-emitting device 失效
    用于发光器件的层压上包层结构

    公开(公告)号：US5400354A

    公开(公告)日：1995-03-21

    申请号：US193681

    申请日：1994-02-08

    申请人： Michael Ludowise ,  Nick Holonyak, Jr. ,  Stephen J. Caracci ,  Michael R. Krames ,  Fred A. Kish

    发明人： Michael Ludowise ,  Nick Holonyak, Jr. ,  Stephen J. Caracci ,  Michael R. Krames ,  Fred A. Kish

    IPC分类号： H01L21/338 ,  H01L21/74 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/51 ,  H01L33/30 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01L29/513 ,  H01L21/746 ,  H01L21/8252 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/66863 ,  H01L33/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/2059 ,  H01S5/2205 ,  H01S5/2214 ,  H01S5/32391

    摘要： A fabrication method for providing a semiconductor light-emitting device includes growing a plurality of layers on a semiconductor substrate, including forming a lower cladding layer and an active region for generating lightwaves. A laminated cladding structure is formed on the active region. The laminated cladding structure includes a lower layer that is substantially aluminum-free to inhibit oxidation and includes an upper layer that is aluminum-bearing in order to promote oxidation. The upper layer of the lamination is oxidized along selected first regions and is selectively masked to prevent oxidation for second regions. The oxidation of the first region is carried out under conditions such that a native oxide is formed throughout the thickness of the first regions. Electrical current to the active region for operating the light-emitting device is channeled via the unoxidized region of the upper layer of the lamination. In a preferred embodiment, the device is an InGaAsP-AlInAs-InP laser. Other electronic devices, such as FETs, can be also formed using the top-down approach. Preferably, oxidation is limited to an upper III-V semiconductor layer by forming a lower III-V semiconductor layer that includes In and/or P. Lateral oxidation can also be realized using this approach.

    摘要翻译： 一种用于提供半导体发光器件的制造方法包括在半导体衬底上生长多个层，包括形成下覆盖层和用于产生光波的有源区。 在有源区上形成层叠包层结构。 层压包覆结构包括基本上不含铝的下层以抑制氧化，并且包括为了促进氧化而成为铝的上层。 叠层的上层被沿选定的第一区氧化，并被选择性地掩蔽以防止第二区的氧化。 第一区域的氧化在使得在第一区域的整个厚度上形成天然氧化物的条件下进行。 通过层压的上层的未氧化区域引导到用于操作发光器件的有源区的电流。 在优选实施例中，器件是InGaAsP-AlInAs-InP激光器。 也可以使用自顶向下的方法形成诸如FET的其它电子器件。 优选地，通过形成包括In和/或P的下III-V半导体层，氧化被限制在上III-V半导体层。也可以使用这种方法实现侧向氧化。

    Semiconductor laser device with coupled cavities
    6.
    发明授权
    Semiconductor laser device with coupled cavities 失效
    具有耦合腔的半导体激光器件

    公开(公告)号：US5353295A

    公开(公告)日：1994-10-04

    申请号：US927822

    申请日：1992-08-10

    申请人： Nick Holonyak, Jr. ,  Nada El-Zein ,  Fred A. Kish

    发明人： Nick Holonyak, Jr. ,  Nada El-Zein ,  Fred A. Kish

    IPC分类号： H01L21/316 ,  H01S5/026 ,  H01S5/10 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/31666 ,  H01S5/10 ,  H01S5/1021 ,  H01S5/026 ,  H01S5/1028 ,  H01S5/1071 ,  H01S5/4031 ,  H01S5/4056 ,  H01S5/4068

    摘要： In a form of the disclosure an array of coupled cavities (called minicavities) of a QWH semiconductor laser are defined by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. The native oxide confines the injected carriers and optical field within the cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe. Single-longitudinal-mode operation is exhibited over an extended range. In a further form of the disclosure, two linear arrays of end-coupled minicavities are arranged side by side to obtain a two dimensional array, with resultant lateral coupling between the linear arrays. The two dimensional array exhibits mode switching and multiple switching in the light power (L) versus current (I) characteristic (L-I) with increasing current. In another form of the disclosure, a stripe laser is transversely coupled (or side-coupled) with a linear array of end-coupled minicavities. Bistability and switching are demonstrated in the light versus current (L-I) characteristic of a native-oxide-defined structure of this type. The device, with internally coupled elements and the current partitioned among the elements, exhibits a large hysteresis in the L-I curve, with switching from the stimulated to the spontaneous regime occurring over substantial power (light) and current ranges.

    摘要翻译： 在本公开的形式中，QWH半导体激光器的耦合空腔（称为微小电位）的阵列由含铝III-V半导体材料的天然氧化物限定，并且沿纵向方向串联地串联设置。 天然氧化物将注入的载流子和光场限制在空腔内，导致沿着激光条带周期性地分布的反射和光学反馈。 单纵模操作在扩展范围内展现。 在本公开的另一形式中，并行布置两个端部耦合的微小的线性阵列以获得二维阵列，并且在线性阵列之间产生横向耦合。 二维阵列随着电流的增加呈现模式切换和光功率（L）与电流（I）特性（L-I）的多次切换。 在本公开的另一种形式中，条形激光器与端部耦合的微型半导体的线性阵列横向耦合（或侧耦合）。 在这种类型的自然氧化物定义的结构的光 - 电流（L-I）特性中证明了双稳态和开关。 具有内部耦合元件和在元件之间分配的电流的器件在L-I曲线中表现出大的滞后，从被激励到自发状态从基本功率（光）和电流范围发生。

    Semiconductor laser
    8.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5425043A

    公开(公告)日：1995-06-13

    申请号：US287784

    申请日：1994-08-09

    申请人： Nick Holonyak, Jr. ,  Nada El-Zein ,  Fred A. Kish

    发明人： Nick Holonyak, Jr. ,  Nada El-Zein ,  Fred A. Kish

    IPC分类号： H01L21/316 ,  H01S5/026 ,  H01S5/10 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/31666 ,  H01S5/10 ,  H01S5/1021 ,  H01S5/026 ,  H01S5/1028 ,  H01S5/1071 ,  H01S5/4031 ,  H01S5/4056 ,  H01S5/4068

    摘要： In a form of the disclosure an array of coupled cavities (called minicavities) of a QWH semiconductor laser are defined by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. The native oxide confines the injected carriers and optical field within the cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe. Single-longitudinal-mode operation is exhibited over an extended range. In a further form of the disclosure, two linear arrays of end-coupled minicavities are arranged side by side to obtain a two dimensional array, with resultant lateral coupling between the linear arrays. The two dimensional array exhibits mode switching and multiple switching in the light power (L) versus current (I) characteristic (L-I) with increasing current. In another form of the disclosure, a stripe laser is transversely coupled (or side-coupled) with a linear array of end-coupled minicavities. Bistability and switching are demonstrated in the light versus current (L-I) characteristic of a native-oxide-defined structure of this type. The device, with internally coupled elements and the current partitioned among the elements, exhibits a large hysteresis in the L-I curve, with switching from the stimulated to the spontaneous regime occurring over substantial power (light) and current ranges.

    摘要翻译： 在本公开的形式中，QWH半导体激光器的耦合空腔（称为微小电位）的阵列由含铝III-V半导体材料的天然氧化物限定，并且沿纵向方向串联地串联设置。 天然氧化物将注入的载流子和光场限制在空腔内，导致沿着激光条带周期性地分布的反射和光学反馈。 单纵模操作在扩展范围内展现。 在本公开的另一形式中，并行布置两个端部耦合的微小的线性阵列以获得二维阵列，并且在线性阵列之间产生横向耦合。 二维阵列随着电流的增加呈现模式切换和光功率（L）与电流（I）特性（L-I）的多次切换。 在本公开的另一种形式中，条形激光器与端部耦合的微型半导体的线性阵列横向耦合（或侧耦合）。 在这种类型的自然氧化物定义的结构的光 - 电流（L-I）特性中证明了双稳态和开关。 具有内部耦合元件和在元件之间分配的电流的器件在L-I曲线中表现出大的滞后，从被激励到自发状态从基本功率（光）和电流范围发生。

    Method for increasing the speed of a light emitting biopolar transistor device
    9.
    发明授权
    Method for increasing the speed of a light emitting biopolar transistor device 有权
    提高发光生物极性晶体管器件速度的方法

    公开(公告)号：US07998807B2

    公开(公告)日：2011-08-16

    申请号：US10861320

    申请日：2004-06-04

    申请人： Milton Feng ,  Nick Holonyak, Jr.

    发明人： Milton Feng ,  Nick Holonyak, Jr.

    IPC分类号： H01L21/8249

    CPC分类号： H01L33/0016 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/155 ,  H01L29/205 ,  H01L29/66242 ,  H01L29/7371 ,  H01L33/08

    摘要： A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.

    摘要翻译： 一种提高双极晶体管速度的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且使基极区域适应于增强受激发射而不利于自发发射，从而降低基区的载流子复合寿命。

    Semiconductor devices and methods with tunnel contact hole sources
    10.
    发明授权
    Semiconductor devices and methods with tunnel contact hole sources 失效
    具有隧道接触孔源的半导体器件和方法

    公开(公告)号：US5936266A

    公开(公告)日：1999-08-10

    申请号：US950653

    申请日：1997-10-15

    申请人： Nick Holonyak, Jr. ,  Jonathan J. Wierer ,  Peter W. Evans

    发明人： Nick Holonyak, Jr. ,  Jonathan J. Wierer ,  Peter W. Evans

    IPC分类号： H01L29/88 ,  H01L33/04 ,  H01L33/14 ,  H01L33/30 ,  H01S5/183 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01L33/00 ,  H01S3/19

    CPC分类号： H01L33/30 ,  H01L33/04 ,  H01L33/14 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18372 ,  H01S5/2036 ,  H01S5/3095

    摘要： Semiconductor devices and methods are disclosed in which the amount of p-type material can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication. A form of the disclosure is directed to a generally planar semiconductor device wherein a layer of p-type semiconductor material is disposed over a layer of n-type semiconductor material, and an electric potential is coupled between the p-type layer and the n-type layer, and wherein current in the device that is lateral to the plane of the layers is coupled into the p-type layer. A tunnel junction is adjacent the p-type layer for converting the lateral current into hole current. In an embodiment of this form of the disclosure, the tunnel junction is an n+/p+ junction oriented with the p+ portion thereof adjacent the p-type layer. The lateral current can be electron current in the n+ layer and/or electron current in a further layer of n-type material disposed over the tunnel junction.

    摘要翻译： 公开了半导体器件和方法，其中p型材料的量可以最小化，同时具有电，热和光学性能以及制造中的优点。 本公开的一种形式涉及一种大致平面的半导体器件，其中p型半导体材料层设置在n型半导体材料的层上，并且电位耦合在p型层和n型半导体层之间， 类型层，并且其中在该层的平面侧面的器件中的电流耦合到p型层中。 隧道结邻近p型层，用于将横向电流转换成空穴电流。 在本公开的这种形式的实施例中，隧道结是以p +部分邻近p型层取向的n + / p +结。 横向电流可以是n +层中的电子电流和/或设置在隧道结上方的另一层n型材料中的电子电流。