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    CONTACT RESISTANCE MEASUREMENT FOR RESISTANCE LINEARITY IN NANOSTRUCTURE THIN FILMS
    2.
    发明申请
    CONTACT RESISTANCE MEASUREMENT FOR RESISTANCE LINEARITY IN NANOSTRUCTURE THIN FILMS 审中-公开
    接触电阻测量在纳米薄膜中的电阻线性

    公开(公告)号：US20110042126A1

    公开(公告)日：2011-02-24

    申请号：US12862548

    申请日：2010-08-24

    申请人： Michael Spaid ,  Florian Pschenitzka

    发明人： Michael Spaid ,  Florian Pschenitzka

    IPC分类号： H05K1/00 ,  G01R27/08

    CPC分类号： G06F3/045

    摘要： The present disclosure is directed to a transparent conductor for use in touch panel devices having a plurality of nanostructures therein that provides reliable output based on user touch or pen input. To determine if a touch panel is reliable, there is disclosed a method of measuring voltages across the transparent conductor when it is touched. These measured voltages are converted into contact resistances, which are statistically analyzed. A median contact resistance is determined based on the converted contact resistances. The remaining set of converted contact resistances are analyzed to determine if they are within acceptable limits. Acceptable limits may include most of the contact resistances falling within a range, none of the contact resistances exceeding an upper limit, and a difference in contact resistances converted for different users or pens does not exceed a maximum variability.

    摘要翻译： 本公开涉及一种用于其中具有多个纳米结构的触摸面板装置的透明导体，其基于用户触摸或笔输入提供可靠的输出。 为了确定触摸面板是否可靠，公开了一种当触摸时测量透明导体上的电压的方法。 这些测量的电压被转换为接触电阻，进行统计分析。 基于转换的接触电阻确定中值接触电阻。 分析剩余的一组转换的接触电阻以确定它们是否在可接受的限度内。 可接受的限制可以包括大部分接触电阻落在一个范围内，接触电阻不超过上限，并且不同用户或笔转换的接触电阻差不超过最大变化。

    Determining leakage in matrix-structured electronic devices
    8.
    发明授权
    Determining leakage in matrix-structured electronic devices 有权
    确定矩阵结构的电子设备中的泄漏

    公开(公告)号：US07710365B2

    公开(公告)日：2010-05-04

    申请号：US11645971

    申请日：2006-12-26

    申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    IPC分类号： G09G3/30

    CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

    摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

    摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。

    Determining leakage in matrix-structured electronic devices
    9.
    发明申请
    Determining leakage in matrix-structured electronic devices 有权
    确定矩阵结构的电子设备中的泄漏

    公开(公告)号：US20050258859A1

    公开(公告)日：2005-11-24

    申请号：US10952601

    申请日：2004-09-28

    申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    IPC分类号： G01R31/00 ,  G01R31/30 ,  G09G3/00 ,  G09G3/32

    CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

    摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

    摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。

    Anisotropy reduction in coating of conductive films
    10.
    发明授权
    Anisotropy reduction in coating of conductive films 有权
    导电膜涂层各向异性降低

    公开(公告)号：US09573163B2

    公开(公告)日：2017-02-21

    申请号：US13535112

    申请日：2012-06-27

    申请人： Florian Pschenitzka ,  Jonathan Westwater

    发明人： Florian Pschenitzka ,  Jonathan Westwater

    IPC分类号： B05D1/26 ,  B05D3/04 ,  B05D7/04

    CPC分类号： B05D3/042 ,  B05D1/26 ,  B05D7/04 ,  B05D2252/02 ,  B05D2601/28 ,  Y10T428/24372 ,  Y10T428/25

    摘要： Provided herein is a method of forming a conductive film, the method comprising: providing a coating solution having a plurality of conductive nanostructures and a fluid carrier; moving a web in a machine direction; forming a wet film by depositing the coating solution on the moving web, wherein the wet film has a first dimension extending parallel to the machine direction and a second dimension transverse to the machine direction; applying an air flow across the wet film along the second dimension, whereby at least some of the conductive nanostructures in the wet film are reoriented; and allowing the wet film to dry to provide the conductive film.

    摘要翻译： 本文提供形成导电膜的方法，所述方法包括：提供具有多个导电纳米结构和流体载体的涂布溶液; 在机器方向移动网页; 通过将所述涂布溶液沉积在所述移动幅材上而形成湿膜，其中所述湿膜具有平行于机器方向延伸的第一尺寸和横向于机器方向的第二尺寸; 沿着第二维度施加气流穿过湿膜，由此湿膜中的至少一些导电纳米结构重新定向; 并使湿膜干燥以提供导电膜。