摘要:
Provided is a GLP-1 analogue having the structure as shown in the general formula A: 7HAEX10TFTSX15VSSYLEX22QAAKEFIX30WLX33KGRG37n1X1Cn2X2 (general formula A), wherein X10 is glycine or cysteine, X15 is aspartic acid or cysteine, X22 is glycine or cysteine, X30 is alanine or cysteine, X33 is valine or cysteine, and at least one of X10, X15, X22, X30 and X33 is cysteine, X1 and X2 respectively is glycine, alanine or valine, n1=1-30, n2=1-30. The general formula A contains two cysteines to form disulfide bonds. Also provided are the preparation methods and the use of said GLP-1 analogue. Said GLP-1 analogue has a prolonged blood half-life compared with GLP-1, and can be used for the treatment of diabetes and obesity.
摘要:
The present invention relates to the field of drugs associated with treating diabetes. Particularly, the present invention relates to a dipeptidyl peptidase-IV inhibitor having the structure shown by formula (I), which contains amide thiazole structure and has an effect on treating diabetes, and a preparation method and a pharmaceutical composition containing it, as well as use thereof in manufacture of the drugs for treating the diabetes, wherein, R1 is methyl; R2 is phenyl; phenyl, 2-thienyl substituted in a mono-substituted, bi-substituted manner by fluorine and methyl.
摘要:
The present invention relates to the field of drugs associated with treating diabetes. Particularly, the present invention relates to a dipeptidyl peptidase-IV inhibitor having the structure shown by formula (I), which contains amide thiazole structure and has an effect on treating diabetes, and a preparation method and a pharmaceutical composition containing it, as well as use thereof in manufacture of the drugs for treating the diabetes, wherein, R1 is methyl; R2 is phenyl; phenyl, 2-thienyl substituted in a mono-substituted, bi-substituted manner by fluorine and methyl.
摘要:
This invention provides a method for preparing cycloastragenol monoglucoside CMG (cycloastragenol-6-O-β-D-glucoside), comprising the steps of: a. using astragaloside IV or Astragali extracts prepared by a conventional method as raw materials and adding an appropriate solvent thereinto to form a raw material solution; b. adding hydrolase and allowing for hydrolysis at a constant temperature to obtain a hydrolysate; c. separating the hydrolysate with macroporous adsorption resin; and d. obtaining the product by purification and separation. The present invention further provides cycloastragenol-6-O-β-D-glucoside prepared according to the method of this invention as well as its use in the preparation of a medicament for treating cardiovascular diseases and pharmaceutical compositions comprising the same.
摘要:
This invention provides a method for preparing cycloastragenol monoglucoside CMG (cycloastragenol-6-O-β-D-glucoside), comprising the steps of: a. using astragaloside IV or Astragali extracts prepared by a conventional method as raw materials and adding an appropriate solvent thereinto to form a raw material solution; b. adding hydrolase and allowing for hydrolysis at a constant temperature to obtain a hydrolysate; c. separating the hydrolysate with macroporous adsorption resin; and d. obtaining the product by purification and separation. The present invention further provides cycloastragenol-6-O-β-D-glucoside prepared according to the method of this invention as well as its use in the preparation of a medicament for treating cardiovascular diseases and pharmaceutical compositions comprising the same.
摘要:
The invention disclosed a method for forming high aspect ratio patterning structure. Firstly, forming a dielectric film ashing stop layer, a first photoresist layer, a first hard mask layer and a second photoresist layer on a semiconductor substrate in turn. A second hard mask layer having a high etch selectivity ratio with the first photoresist layer is formed on top surface and sidewall of the pattern by utilizing a low temperature chemical vapor deposition process, which can be a protect for the pattern sidewall during the later etching process of the first photoresist layer. So, the cone-shaped or the bowling-shaped photoresist morphology caused by plasma bombardment can be avoided. Therefore, the problems of the insufficient of selectivity ratio, burrs at the edge of the pattern and larger critical dimension can be solved, and the implanted ions can be well distributed according to the design of the device.
摘要:
A field emission device includes a cathode and a carbon nanotube (CNT) gate electrode. The CNT gate electrode which is electrically insulated from the cathode includes a CNT layer and a dielectric layer. The CNT layer which has a surface includes a number of micropores. The dielectric layer is coated on the surface of the CNT layer and an inner wall of each of the micropores.
摘要:
Automatically arranging icons on a user interface is provided. A plurality of icons associated with items are received and displayed on the user interface. An importance score for each icon of the plurality of icons and a similarity score between two or more of the plurality of icons are determined. Further, a user interface coordinate is assigned to at least a portion of the plurality of icons based on the importance and similarity scores. The user interface is then displayed with the at least a portion of the plurality of icons according to the user interface coordinate.
摘要:
A heater includes a substrate, a plurality of first electrode down-leads, a plurality of second electrode down-leads and a plurality of heating units. The plurality of first electrode down-leads are located on the substrate in parallel to each other and the plurality of second electrode down-leads are located on the substrate in parallel to each other. The first electrode down-leads cross the second electrode down-leads and define a plurality of grids. One heating unit is located in each grid. Each heating unit includes a first electrode, a second electrode and a heating element. The heating element includes a carbon nanotube structure.
摘要:
A semiconductor device includes a lead frame having a down bond area, a die attach area and a dam formed between the down bond area and the die attach area. A bottom of the dam is attached on a surface of the lead frame. The dam prevents contamination of the down bond area from die attach material, which may occur during a die attach process.