摘要:
Fibrous copper microparticles having a minor axis of 1 μm or less and an aspect ratio of 10 or more, wherein the content of the copper particles having a minor axis of 0.3 μm or more and an aspect ratio of 1.5 or less is 0.1 or less copper particle per one fibrous copper microparticle.
摘要:
The present invention provides coated fibrous copper microparticles, wherein the coated fibrous copper microparticles are fibrous copper microparticles each at least partially coated with a metal other than copper, and the length and the aspect ratio of the fibrous copper microparticles are 1 μm or more and 10 or more, respectively.
摘要:
A method for producing a cadmium negative electrode for alkaline batteries according to the present invention comprises a step of obtaining a cadmium active-substance impregnated electrode plate by impregnating said electrode substrate with a cadmium active substance; and a step of adding polyethylene glycol for forming a polyethylene glycol coating on the surface of said cadmium negative electrode or on the surface of said active substance by coating or impregnating said active-substance impregnated electrode with polyethylene glycol.
摘要:
A rolling bearing unit comprising a rotatable race having an inner peripheral surface formed with an outer ring raceway and an outer peripheral surface formed with a rotating flange, a stationary race having an outer peripheral surface formed with an inner ring raceway, a plurality of rolling members between the outer ring raceway and the inner ring raceway, an annular encoder of multi-pole magnet supported in a concentric relation with the rotatable race to have characteristics alternately changed with a uniform interval in the circumferential direction and having an outer diameter larger than the outer diameter of the rotatable race, and a metal ring for supporting the encoder onto the rotatable race and having a cylindrical portion provided to enclose the encoder.
摘要:
On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
摘要翻译:在GaAs衬底(AlYGa1-Y)上,形成与衬底晶格匹配的0.5In0.5P晶体层(0≤Y≤1)。 通过在层叠基板的加热的同时将As分子束照射到晶体层中的In蒸发的温度,将结晶层的表面附近的部分变更为AlYGa1-YAs晶体层(0 < / = Y <1),其上形成有AlXGa1-XAs晶体层(0≤X≤1)的几个分子的厚度。 由于AlYGa1-YAs晶体层的表面已经被剥离,所形成的AlXGa1-XAs晶体层具有高结晶度,从而能够以高效率制造发光二极管,半导体激光器件等。
摘要:
A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.
摘要:
A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.
摘要:
A combination seal ring with an encoder for use to close off the opening of the space between a fixed ring and a rotational ring and to detect a rotational speed of the rotational ring, comprising a seal ring secured to the fixed ring, a metal slinger secured to the rotational ring, and an encoder of a rubber magnet secured to the slinger, the seal ring comprising a metal core secured to the fixed ring, and a fixed ring portion bent toward the rotational ring from the fixed cylindrical portion; and a resilient member bonded all around the metal core, the slinger comprising a rotational cylindrical portion secured to the rotational ring, and a rotational ring portion bent toward the fixed ring from the rotational cylindrical portion, the encoder bonded on the rotational circular ring portion, opposite to the seal lips by a molding process, the end rim of the encoder being short at least 0.2 mm of the end rim of the rotational circular ring portion.
摘要:
A semiconductor memory device includes an inner circuit. The inner circuit includes a command user interface, a logical circuit and a pad. Based upon an externally input fixing command, the command user interface outputs signals A and B with H or L level. Upon receipt of the signal A of H level and the signal B of L level, the logical circuit outputs a fixed logical signal of H level independent of the signal received from the pad, and upon receipt of the signal A of L level and the signal B of H level, outputs a fixed logical signal of L level independent of the signal received from the pad. Thus, it becomes possible to carry out a high-quality testing operation even when the number of the test pins of a test device is smaller than the number of address pins or data pins of a semiconductor memory device.
摘要:
A polyamide resin composition comprising a polyamide and an alkaline earth metal compound, wherein the amount of a cyclic monomer formed by melting said composition under the conditions of a moisture content of 0.02% by weight or less, at 0.01 Torr or below, at 250.degree. C., and for 8 hours is not more than 0.7 parts by weight per 100 parts by weight of the polyamide; and fibers, films and molded articles with the use of the same.