Abstract:
A method of manufacturing a light emitting device including: forming a supporting body on a mounting surface of each of semiconductor light emitting elements; arranging the semiconductor light emitting elements to be spaced apart from each other by a predetermined distance; and forming a wavelength conversion layer to continuously cover an upper surface and side surfaces of at least one of the semiconductor light emitting elements. The forming the wavelength conversion layer includes spraying a slurry provided by mixing particles of a wavelength conversion member and a thermosetting resin in a solvent onto the upper surface and the side surfaces of the semiconductor light emitting element, so that a thickness of the wavelength conversion layer at a lower portion of the side surfaces of the supporting body is smaller than the thickness on the upper surface and the side surfaces of the semiconductor light emitting element.
Abstract:
A wavelength conversion member complex includes a wavelength conversion member, a joining material, and a heat dissipation member. The wavelength conversion member includes a support and a phosphor member. The support defines a through-hole extending from an upper surface to a lower surface. The support has a concave portion on the lower surface around the through-hole. The concave portion is spaced apart from the through-hole. The phosphor member is disposed in the through-hole and includes a phosphor. The lower surface of the phosphor member is continuous with the lower surface of the support. The joining material is disposed in the concave portion, and has a lower surface that is flush with the lower surface of the support. The heat dissipation member is disposed under the joining material and the phosphor member, and has an upper surface in contact with the lower surface of the joining material.
Abstract:
A light emitting device includes a base body, a light emitting element and a sealing member. The base body includes a base material and a pair of connection terminals on at least a first main surface of the base material. The light emitting element is connected to the connection terminals. The sealing member seals the light emitting element. The sealing member includes a light transmissive member disposed on an upper surface of the light emitting element, and a light shielding member sealing an end surface of the light emitting element and an end surface of the light transmissive member. The base material has a linear expansion coefficient within ±10 ppm/° C. of a linear expansion coefficient of the light emitting element.
Abstract:
A method of producing a light emitting device includes providing a light emitting element on a base member, the base member including an insulating member and a pair of connection terminals at least on an upper surface thereof. The connection terminals have an exposed portion exposed to outside, with the light emitting element electrically connected to the connection terminals. A covering member is disposed to cover at least a portion of the upper surface of the light emitting element, and a protective layer is disposed to cover at least a portion of the exposed portions of the connection terminals. The covering member is removed, and material from the upper surface side of the base member is supplied to dispose a light-transmissive member on the upper surface of the light emitting element. At least a portion of the light-transmissive member present on the protective layer is then removed.
Abstract:
Provided is a small and thin light emitting device which has no connection failure, a high life, high performance and good light extraction efficiency. The light emitting device includes a base body comprising a base material having a pair of connection terminals on at least a first main surface, a light emitting element connected to the connection terminals, and a sealing member that seals the light emitting element, wherein the base material has a linear expansion coefficient within ±10 ppm/° C. of the linear expansion coefficient of the light emitting element.
Abstract:
A light emitting device includes at least one semiconductor light emitting element, and a wavelength conversion layer which is formed on a surface of the semiconductor light emitting element and which includes a resin layer containing a wavelength conversion member for converting a wavelength of light emitted from the semiconductor light emitting element. The wavelength conversion layer covers an upper surface or the upper surface and a side surface of the semiconductor light emitting element. A content of an inorganic material including the wavelength conversion member, or a content of an inorganic material including the wavelength conversion member and an inorganic filler, in the resin layer is 30% by mass or more and 99% by mass or less.
Abstract:
A method of producing a light emitting device includes providing a light emitting element on a base member, the base member including an insulating member and a pair of connection terminals at least on an upper surface thereof. The connection terminals have an exposed portion exposed to outside, with the light emitting element electrically connected to the connection terminals. A covering member is disposed to cover at least a portion of the upper surface of the light emitting element, and a protective layer is disposed to cover at least a portion of the exposed portions of the connection terminals. The covering member is removed, and material from the upper surface side of the base member is supplied to dispose a light-transmissive member on the upper surface of the light emitting element. At least a portion of the light-transmissive member present on the protective layer is then removed.
Abstract:
Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and achieving an even light distribution color, and a method of manufacturing the same. A method of manufacturing a light emitting device includes arranging a plurality of semiconductor light emitting elements spaced apart from each other on an expandable sheet, spraying a slurry containing a solvent, a thermosetting resin, and phosphor particles, onto an entire surface of the sheet having the arranged semiconductor light emitting elements to form a resin layer, pre-curing the resin layer, disuniting the resin layer formed on the surface of the semiconductor light emitting element from the resin layer formed on the sheet by expanding the sheet, and main curing the resin layer, which steps are performed in this order.
Abstract:
A light emitting device includes at least one semiconductor light emitting element, and a wavelength conversion layer which is formed on a surface of the semiconductor light emitting element and which includes a resin layer containing a wavelength conversion member for converting a wavelength of light emitted from the semiconductor light emitting element. The wavelength conversion layer covers an upper surface or the upper surface and a side surface of the semiconductor light emitting element. A content of an inorganic material including the wavelength conversion member, or a content of an inorganic material including the wavelength conversion member and an inorganic filler, in the resin layer is 30% by mass or more and 99% by mass or less.
Abstract:
Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device 100 includes a light emitting element 20 with a supporting body which is composed of a semiconductor light emitting element 1 and a supporting body 10, and a phosphor layer 7 which continuously covers an upper surface and side surfaces of the semiconductor light emitting element 1, and side surfaces of the supporting body 10. The phosphor layer 7 is configured such that at least a lower portion of the side surface of the supporting body 10 is thinner than the upper surface and the side surface of the semiconductor light emitting element 1. Such a configuration of the phosphor layer can be formed by applying a spray-coating of a slurry containing phosphor particles and a thermosetting resin in a solvent on the semiconductor light emitting element 1 side of the light emitting element 20 which has the supporting body.