公开(公告)号：US5060045A

公开(公告)日：1991-10-22

申请号：US422640

申请日：1989-10-17

申请人： Nobuo Owada ,  Hiroyuki Akimori ,  Takahisa Nitta ,  Tohru Kobayashi ,  Shunji Sasabe ,  Mikinori Kawaji ,  Osamu Kasahara

发明人： Nobuo Owada ,  Hiroyuki Akimori ,  Takahisa Nitta ,  Tohru Kobayashi ,  Shunji Sasabe ,  Mikinori Kawaji ,  Osamu Kasahara

IPC分类号： H01L21/3205 ,  H01L21/82 ,  H01L23/52 ,  H01L27/118

CPC分类号： H01L27/118

摘要： Disclosed is a semiconductor integrated circuit device adopting a gate array scheme, having a plurality of layers of wiring formed by a Design Automation system. The device according to the present invention includes a semiconductor substrate having basic cell forming regions, the basic cell forming regions being spaced from each other with wiring channel regions between adjacent basic cell forming regions. The wiring includes at least first-layer wiring lines arranged overlying the wiring channel regions; second-layer wiring lines overlying both the basic cell forming regions and the wiring channel regions; and third-layer wiring lines overlying both the basic cell forming regions and the wiring channel regions. The first-, second- and third-layer wiring lines respectively extend in first, second and third directions, the second direction being different from the first direction. The wiring pitches of the second-layer wiring lines and the third-layer wiring lines are set substantially equal to or smaller than the wiring pitch of th first-layer wiring lines. As a further aspect of the present invention, the ratio of wiring pitch of third-layer wiring lines to first-layer wiring lines can be 0.5, 1.0, 1.5 or 2.0. In addition, insulator films on which are formed the wiring lines are respectively subjected to flattening processes in order to flatten their upper surfaces, prior to providing the wiring lines thereon.

摘要翻译： 公开了一种采用门阵列方案的半导体集成电路装置，具有由设计自动化系统形成的多层布线。 根据本发明的器件包括具有碱性电池形成区域的半导体衬底，所述碱性电池形成区域彼此间隔开，并且在相邻的基本电池形成区域之间具有布线沟道区域。 布线至少包括布置在布线沟道区域上的第一层布线; 覆盖基本单元形成区域和布线沟道区域的第二层布线; 以及覆盖基本单元形成区域和布线沟道区域的第三层布线。 第一，第二和第三层布线分别在第一，第二和第三方向上延伸，第二方向不同于第一方向。 第二层布线和第三层布线的布线间距基本上等于或小于第一层布线的布线间距。 作为本发明的另一方面，第三层布线与第一层布线的布线间距的比可以为0.5,1.0,1.5或2.0。 此外，在其上形成布线的绝缘膜分别在其上提供布线之前分别进行平坦化处理以使其上表面变平。

公开(公告)号：US06357385B1

公开(公告)日：2002-03-19

申请号：US09355229

申请日：1999-10-05

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

IPC分类号： C23C1600

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31675 ,  H01L21/31691

摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/&mgr;0&sgr;)½, where &sgr;, &mgr;0 and &ohgr; respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 构件的厚度（d）大于（2 / mu0sigma）1/2，其中σ，μ0和ω分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

公开(公告)号：US6150851A

公开(公告)日：2000-11-21

申请号：US92465

申请日：1998-06-05

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Koji Kotani

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Koji Kotani

IPC分类号： G01R19/165 ,  G11C27/02 ,  H03K5/08

CPC分类号： G11C27/026

摘要： Charge transfer amplifier circuit which is capable of canceling fluctuations in the element characteristics thereof and which conducts highly accurate voltage amplification without the use of a stationary current, and provides a voltage comparator which may be applied to a highly accurate A/D converter which has low power consumption. The charge transfer amplifier circuit is provided with a MOS transistor, a first capacity and a second capacity which are effectively connected to, respectively, the source electrode and the drain electrode of the MOS transistor, a mechanism for setting the region between the terminals of the first capacity and the region between the terminals of the second capacity, respectively, to appropriate predetermined potential differences, and for releasing these, and a mechanism for appropriately externally altering the potential difference between the gate and the source of the MOS transistor. The first capacity is set so as to be larger than the second capacity. Furthermore, in the voltage comparator, a dynamic latch circuit is connected to the drain electrode of the charge transfer amplifier circuit.

摘要翻译： 电荷传输放大器电路，其能够抵消其元件特性的波动，并且在不使用稳定电流的情况下进行高精度的电压放大，并且提供可应用于具有低电平的高精度A / D转换器的电压比较器 能量消耗。 电荷传输放大器电路设置有分别有效地连接到MOS晶体管的源电极和漏电极的MOS晶体管，第一电容和第二电容，用于设置MOS晶体管的端子之间的区域的机构 第一容量和第二容量的端子之间的区域分别适当地预定的电位差，并且用于释放它们，以及用于适当地外部改变MOS晶体管的栅极和源极之间的电位差的机构。 第一容量被设定为大于第二容量。 此外，在电压比较器中，动态锁存电路连接到电荷传输放大器电路的漏电极。

公开(公告)号：US20050045207A1

公开(公告)日：2005-03-03

申请号：US10849836

申请日：2004-05-21

申请人： Takahisa Nitta ,  Nobuhiro Miki ,  Yoshiaki Yamaguchi

发明人： Takahisa Nitta ,  Nobuhiro Miki ,  Yoshiaki Yamaguchi

IPC分类号： H01L21/304 ,  B01F5/04 ,  B01F5/12 ,  B01F15/02 ,  B01F15/04 ,  B01J4/02 ,  F04B13/02 ,  F04B43/00 ,  F04B43/02 ,  F04B43/04 ,  F04F7/00 ,  F16K7/12 ,  G05D11/13 ,  B08B3/02

CPC分类号： B01F15/042 ,  B01F5/0471 ,  B01F5/0475 ,  B01F15/0203 ,  B01F15/024 ,  B01F15/0244 ,  B01F2215/0096 ,  F04B43/0054 ,  F04B43/02 ,  F04B43/046 ,  F04F7/00 ,  F16K7/123 ,  G05D11/138 ,  H01L21/67051

摘要： A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.

摘要翻译： 作为主要要素的化学品供给系统包括：化学品储罐，其中用于清洗的液体化学品以其配制的浓缩物的状态储存;化学品供应装置，连接到化学品储存罐用于积极地进行化学品供应;管道系统 连接到化学物质供给装置，形成作为液体化学品混合的超纯水通道的供给流路，配置在管道系统的端部的一对排出喷嘴，以与晶片的表面相对 设置在清洁室中以将清洁液体供应到表面上。 因此，旨在使包含化学池的清洗液供给系统显着的小型化/简化，可以容易且快速地将化学浓度精确化合并提供清洁液，并且在清洁中产生和混合 液体，被压制到肢体。

公开(公告)号：US06728745B1

公开(公告)日：2004-04-27

申请号：US09581729

申请日：2000-09-06

申请人： Tadahiro Ohmi ,  Makoto Imai ,  Toshiyuki Nozawa ,  Masanori Fujibayashi ,  Koji Kotani ,  Tadashi Shibata ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Makoto Imai ,  Toshiyuki Nozawa ,  Masanori Fujibayashi ,  Koji Kotani ,  Tadashi Shibata ,  Takahisa Nitta

IPC分类号： G06F750

CPC分类号： G06F7/4824 ,  G06F7/506

摘要： There is provided a semiconductor circuit for arithmetic processing and an arithmetic processing method that can increase the rate of processing data and reduces the area of a circuit by suppressing wasteful processing. There is provided a computing unit for computing input data within a computation time unit and outputs a computation result representing a result obtained by the computation, and if a carry is generated in the computation a computation circuit (adders 1-3) for outputting carry data representing this carry, and delay means (memory 4) for delaying the computation result from the computation circuit by one computation time unit, are provided.

摘要翻译： 提供了一种用于算术处理的半导体电路和运算处理方法，其可以通过抑制浪费处理来增加处理数据的速率并减小电路的面积。 提供了一种用于在计算时间单元内计算输入数据的计算单元，并且输出表示通过计算得到的结果的计算结果，并且如果在计算中产生进位，则用于输出进位数据的计算电路（加法器1-3） 并且提供用于将来自计算电路的计算结果延迟一个计算时间单位的延迟装置（存储器4）。

公开(公告)号：US06630031B1

公开(公告)日：2003-10-07

申请号：US09417009

申请日：1999-10-12

申请人： Nobuhiro Miki ,  Takahisa Nitta

发明人： Nobuhiro Miki ,  Takahisa Nitta

IPC分类号： B08B702

CPC分类号： H01L21/67051 ,  B08B3/00 ,  B08B7/0057 ,  B08B2230/01 ,  Y10S134/902 ,  Y10S438/906

摘要： By a simple apparatus construction and process, it is made possible to “clean precisely” a surface at the molecular/atomic level, and the purification degree of the surface processed minutely is made into 1012 molecules/cm2 or less. A steam-spraying nozzle is disposed such that a line slit nozzle is in a diameter direction, and mist-containing steam is sprayed onto the surface of a substrate. Thereby, particles in the steam-spraying surface (the particles were made to adhere by dipping the substrate in a solution containing polystyrene (particle diameter of 0.6 &mgr;m) or alumina (particle diameter of 0.3 &mgr;m to 0.5 &mgr;m) particles at 105 particles/ml.) are removed by about 90% to 95% after ten-seconds spraying, and by 99% or more, that is, to less than the detection limit of a wafer inspection device, after twenty-seconds spraying.

摘要翻译： 通过简单的装置结构和工艺，能够以分子/原子水平“精确地”清洁表面，并且精细加工的表面的净化度为10分/厘米2以下 。 蒸汽喷嘴被设置为使得线狭缝喷嘴处于直径方向，并且含雾蒸汽喷射到基板的表面上。 由此，蒸气喷射表面中的颗粒（通过在10 5℃下将基材浸渍在含有聚苯乙烯（粒径0.6μm）或氧化铝（粒径为0.3μm〜0.5μm）的颗粒的溶液中而使颗粒粘附。 颗粒/毫升）在喷雾十秒后除去约90％至95％，并且在二十秒喷雾之后除去99％或更多，即小于晶片检查装置的检测限。

公开(公告)号：US06612898B1

公开(公告)日：2003-09-02

申请号：US09202105

申请日：1999-05-14

申请人： Tadahiro Ohmi ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Takahisa Nitta

IPC分类号： C23C810

CPC分类号： C23C8/16 ,  C23C8/12 ,  C23C8/14 ,  C23C8/18 ,  Y10T428/1259

摘要： A method for forming an oxidation-passive layer having high corrosion resistance to highly oxidizing materials such as ozone; a stainless steel and a titanium base alloy having corrosion resistance to an ozone containing fluid; and a fluid containing part, a process apparatus, and a fluid feed/discharge system made by using the same. The method comprises the steps of heat-treating the surface of a stainless steel or titanium-base alloy having an Al content of 0.5 percent by weight to 7 percent by weight either at 300° C. to 700° C. in a mixed gas atmosphere composed of an inert gas and 500 ppb to 1 percent H2O gas or 1 ppm to 500 ppm oxygen gas, or alternatively at 20° C. to 300° C. in a mixed gas atmosphere composed of an oxygen gas and at least 100 ppm ozone gas to form an oxidation-passive layer containing an aluminum oxide or a titanium oxide.

摘要翻译： 一种形成对氧化物质如臭氧具有高耐腐蚀性的氧化钝化层的方法; 对含有臭氧的流体具有耐腐蚀性的不锈钢和钛基合金; 流体容纳部，处理装置以及使用该液体的流体供给/排出系统。 该方法包括以下步骤：在混合气体气氛中在300℃至700℃下对Al含量为0.5重量％至7重量％的不锈钢或钛基合金的表面进行热处理 由惰性气体和500ppb至1％H 2 O气体或1ppm至500ppm氧气组成，或者在由氧气和至少100ppm臭氧组成的混合气体气氛中在20℃至300℃ 气体形成含有氧化铝或氧化钛的氧化钝化层。

公开(公告)号：US06610168B1

公开(公告)日：2003-08-26

申请号：US09636821

申请日：2000-08-14

申请人： Nobuhiro Miki ,  Takahisa Nitta

发明人： Nobuhiro Miki ,  Takahisa Nitta

IPC分类号： B08B500

CPC分类号： H01L21/6715 ,  B08B3/00 ,  B08B3/02 ,  B08B7/0057 ,  B08B2203/0288 ,  B08B2230/01 ,  G03F7/422 ,  G03F7/427 ,  Y10T156/11 ,  Y10T156/1116 ,  Y10T156/1121

摘要： A line slit nozzle for spraying steam is disposed along a diameter of a resist film. Steam containing a mist is sprayed onto a surface of the resist film. The film is thereby peeled off and removed. By using a change in physical properties (swelling, etc.) of the resist film by water, the film is easily and surely peeled off. Breakaway from much resources/energy consumption type techniques is realized. In other words, realized are environment-symbiosis type techniques by which resist films can be removed independently of the quantity of energy and kinds of chemical solvents.

摘要翻译： 沿着抗蚀剂膜的直径设置用于喷射蒸汽的线狭缝喷嘴。 含有雾的蒸汽喷涂在抗蚀膜的表面上。 由此剥离和除去膜。 通过使用水的抗蚀剂膜的物理性质（溶胀等）的变化，膜容易且可靠地剥离。 实现了大量资源/能源消耗类型技术的分离。 换句话说，实现了环境共生型技术，通过其可以独立于能量和化学溶剂的种类去除抗蚀剂膜。

公开(公告)号：US06563072B1

公开(公告)日：2003-05-13

申请号：US09509707

申请日：2000-06-08

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

IPC分类号： B23K3538

CPC分类号： B23K35/38 ,  B23K9/0026 ,  B23K9/16 ,  B23K35/383 ,  C23C8/10

摘要： Welding of material such as a piping using ferrite system stainless steel, in which a back sealed gas used for conventional welding is switched from argon gas (or a hydrogen gas/argon gas mix) to an argon gas to which an oxidizing gas is doped at the time of forming a chromium oxide passivation film. Welding conditions are set at the temperature in which the inner surface of the piping does not melt at the time of forming the chromium oxide passivation film. The temperature of the welding piping is set uniformly between welding conditions in conventional welding and welding conditions at the time of forming the chromium oxide passivation film, and in order to replace gases used with conventional welding with gases used at the time of forming the chromium oxide passivation film. A cycle of one round or more is performed under the welding conditions for forming a chromium oxide passivation film, thereby, to form the chromium oxide passivation film on a weld in concurrence with welding.

摘要翻译： 将用于常规焊接的背面密封气体从氩气（或氢气/氩气混合物）切换到掺杂有氧化气体的氩气的铁氧体系不锈钢的管道的材料的焊接 形成氧化铬钝化膜的时间。 焊接条件设定为在形成氧化铬钝化膜时管道的内表面不熔化的温度。 在形成氧化铬钝化膜时，焊接管道的温度在常规焊接和焊接条件的焊接条件之间均匀地设置，并且为了代替在形成氧化铬时使用的气体的常规焊接中使用的气体 钝化膜。 在形成氧化铬钝化膜的焊接条件下进行一圈以上的循环，由此在焊接上形成与焊接同时的氧化铬钝化膜。

公开(公告)号：US06533902B1

公开(公告)日：2003-03-18

申请号：US09817158

申请日：2001-03-27

申请人： Nobuhiro Miki ,  Takahisa Nitta

发明人： Nobuhiro Miki ,  Takahisa Nitta

IPC分类号： B08B300

CPC分类号： H01L21/67028 ,  A61L2/10 ,  A61L9/20 ,  B01J19/123 ,  C02F1/325 ,  C02F2103/04 ,  C02F2201/3228

摘要： An ultraviolet light reaction system is constructed for surface cleaning/surface processing, a processing speed and an apparatus size that can not be attained by any conventional chemical reaction system, are realized, and realization of a time-sharing performance/a high-throughput performance/a compact size is intended. Using an excimer ultraviolet lamp whose light source is excimer ultraviolet rays of a wavelength that transmissive distances to air, gas, and water are 2 mm or more, respectively, surface processing (such as a surface cleaning process) of a substrate disposed in a one-by-one substrate chamber is preformed.