摘要:
The dielectric-forming composition according to the invention is characterized by consisting of: composite particles for dielectrics in which part or all of the surfaces of inorganic particles with permittivity of 30 or greater are coated with a conductive metal or a compound thereof, or a conductive organic compound or a conductive inorganic material; and (B) a resin component constituted of at least one of a polymerizable compound and a polymer. In addition, another dielectric-forming composition according to the invention is characterized by containing: ultrafine particle-resin composite particles composed of (J) inorganic ultrafine particles with the average particle size of 0.1 μm or smaller, and (B) a resin component constituted of at least one of a polymerizable compound and a polymer, wherein part or all of the surfaces of the inorganic ultrafine particles (J) are coated with the resin component (B), and the ultrafine particle-resin composite particles contain 20% by weight or more of the inorganic ultrafine particles (J); and inorganic particles with the average particle size of 0.1 to 2 μm and permittivity of 30 or greater, or inorganic composite particles in which a conductive metal or a compound thereof, or a conductive organic compound or a conductive inorganic material is deposited on the part or all of the surfaces of the inorganic particles.
摘要:
An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.
摘要:
A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.
摘要:
A polymer composition containing a specific silyl group-containing polymer, in which the maximum size of particles contained therein is 2 &mgr;m or less, and the number of particles having a size of 0.2 &mgr;m to 2 &mgr;m is 1,000 particles/ml or less. The composition may further contain a specific compound or at least one component selected from an organosilane represented by (R1)nSi(X)4-n, a hydrolyzate of the organosilane and a condensate of the organosilane. The composition is excellent in storage stability, high in hardness and excellent in mechanical strength such as wear resistance, so that a coating film having good taking-up properties even when no lubricant is contained, extremely smooth and having no difference in film thickness can be formed.
摘要:
A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.
摘要:
A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.
摘要:
An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25° C. of 45 mN/m or lower.
摘要:
Coating compositions are silane-based coating compositions containing (a) fine metal particles and/or fine metal oxide particles, and (b) a titanium compound of specific structure and/or (d) an organosiloxane oligomer of specific structure, and (c) a silane compound of specific structure. The silane-based coating compositions can give coating films having good dispersibility of fine particles (a) and high transparency even at high concentrations.
摘要:
A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.
摘要:
A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.