公开(公告)号：US5981118A

公开(公告)日：1999-11-09

申请号：US42747

申请日：1998-03-17

申请人： Nobuyuki Yasutake ,  Yoshihisa Ooae ,  Kazushi Ishida ,  Hiroshi Yasuda ,  Akiyoshi Tsuda ,  Hitoshi Tanaka

发明人： Nobuyuki Yasutake ,  Yoshihisa Ooae ,  Kazushi Ishida ,  Hiroshi Yasuda ,  Akiyoshi Tsuda ,  Hitoshi Tanaka

IPC分类号： G03F7/20 ,  H01J37/317 ,  G03F9/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/2037 ,  G03F7/2065 ,  H01J37/3174 ,  H01J2237/31774

摘要： With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.

摘要翻译： 通过使用一个扫描台19，其中通过设置在扫描台19下方的晶片保持器20A至20E和平衡台21安装多个晶片16A至16E，基于多个带电粒子束曝光共同的曝光数据扫描扫描台19 扫描装置10A至10E以及平衡级21，使得扫描级19和平衡级21的重心G成为固定点。 测量固定在工作台19上的反射镜70L和70R的位置，并且基于它们的值，计算级19的伸缩比和样品16A至16E的位置以获得位置与目标位置的偏差。 阶段19被建模为刚性区域19A至19E松散地连接，并且对于每个区域，测量三个点的位置以计算由于每个脊状区域的旋转引起的曝光目标位置的偏差。 这些偏差由偏转器18A至18D校正。

公开(公告)号：US5404018A

公开(公告)日：1995-04-04

申请号：US843172

申请日：1992-02-28

申请人： Hiroshi Yasuda ,  Yoshihisa Oae ,  Akio Yamada ,  Nobuyuki Yasutake ,  Hisayasu Nishino

发明人： Hiroshi Yasuda ,  Yoshihisa Oae ,  Akio Yamada ,  Nobuyuki Yasutake ,  Hisayasu Nishino

IPC分类号： G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  H01J3/26

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30483 ,  H01J2237/31764

摘要： A charged particle beam exposure apparatus employs a main deflector made of electromagnetic coils and a subdeflector made of electrostatic deflection electrodes. An exposure method used for this apparatus is capable of shortening a wait time of the main deflector. The main deflector deflects a charged particle beam in a direction X, while the subdeflector deflects the beam around the deflecting position of the main deflector to expose an object to the beam. An area to be exposed on the object is divided into thin subfields such that the width, in an X-axis direction of each subfield, is approximately 1/3 the length in a Y-axis direction of the same.

摘要翻译： 带电粒子束曝光装置采用由电磁线圈制成的主偏转器和由静电偏转电极制成的子偏转器。 用于该装置的曝光方法能够缩短主导流板的等待时间。 主偏转器使方向X上的带电粒子束偏转，而子偏转器将光束偏转在主偏转器的偏转位置附近，以将物体暴露于光束。 要曝光在物体上的区域被划分为薄的子场，使得每个子场的X轴方向上的宽度大约为其Y轴方向上的长度的1/3。

公开(公告)号：US5223719A

公开(公告)日：1993-06-29

申请号：US724338

申请日：1991-07-05

申请人： Yasushi Takahashi ,  Kiichi Sakamoto ,  Yoshihisa Oae ,  Hiroshi Yasuda ,  Nobuyuki Yasutake

发明人： Yasushi Takahashi ,  Kiichi Sakamoto ,  Yoshihisa Oae ,  Hiroshi Yasuda ,  Nobuyuki Yasutake

IPC分类号： H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31761 ,  H01J2237/31776

摘要： A charged particle beam mask and apparatus and method of using the same employing a mask that includes a substrate and a plurality of substantially rectangular beam passing sections arranged in parallel and to have a trapezoidal shape. In addition, the masks having a matrix of irradiation areas formed thereon where each irradiation area has a matrix of block patterns, are aligned and selectively irradiated to form a desired pattern on an object.

摘要翻译： 一种带电粒子束掩模及其采用掩模的装置及方法，该掩模包括基板和平行排列并具有梯形形状的多个大致矩形的光束通过部分。 此外，在其上形成有照射区域具有块图案的矩阵的照射区域的矩阵的掩模被对准并选择性地照射以在物体上形成期望的图案。

公开(公告)号：US4853870A

公开(公告)日：1989-08-01

申请号：US54782

申请日：1987-05-27

申请人： Nobuyuki Yasutake ,  Jun-ichi Kai ,  Hiroshi Yasuda ,  Kenichi Kawashima

发明人： Nobuyuki Yasutake ,  Jun-ichi Kai ,  Hiroshi Yasuda ,  Kenichi Kawashima

IPC分类号： H01J37/147 ,  G05B15/02 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/15 ,  H01J2237/30455 ,  H01J2237/31766

摘要： In an electron beam exposure system controlled by a computer, the system includes: an electron optical device for generating electron beams and irradiating the beams to a sample on a stage through a plurality of electron lens, a main deflection coil, and sub deflection electrodes, to form predetermined circuit patterns on the sample. The system also includes a position control device controlling the driving of the stage based on a stage position coordinate designated by the computer, detecting an actual stage position coordinate, and calculating an error value between the designated stage position coordinate and the actual stage position coordinate, the error value being divided into two components of an upper bits portion having an relatively large error value and a lower bits portion having a relatively small error value, and a deflection control device controlling the direction of the electron beams based on the main pattern data corrected by the upper bits portion and the sub pattern data corrected by the lower bits portion, and based on selected main and sub wait times determined by exposure and non-exposure timings.

摘要翻译： 在由计算机控制的电子束曝光系统中，该系统包括：用于产生电子束并通过多个电子透镜，主偏转线圈和副偏转电极将光束照射到载物台上的样品的电子光学装置， 以在样品上形成预定的电路图案。 该系统还包括：基于由计算机指定的舞台位置坐标来控制舞台的驾驶的位置控制装置，检测实际舞台位置坐标，以及计算指定舞台位置坐标与实际舞台位置坐标之间的误差值， 误差值被分成具有相对较大误差值的较高位部分和具有相对较小误差值的较低位部分的两个分量，以及基于校正的主图案数据控制电子束方向的偏转控制装置 通过由较低位部分校正的较高比特部分和子图形数据，并且基于由曝光和非曝光定时确定的选择的主等待时间和次等待时间。

公开(公告)号：US4607333A

公开(公告)日：1986-08-19

申请号：US566322

申请日：1983-12-28

申请人： Nobuyuki Yasutake ,  Hiroshi Yasuda

发明人： Nobuyuki Yasutake ,  Hiroshi Yasuda

IPC分类号： H01L21/027 ,  H01J37/147 ,  H01L21/30 ,  G06F15/46 ,  H01J37/304

CPC分类号： H01J37/1477 ,  H01L21/30

摘要： An electron beam exposure apparatus includes an electromagnetic-type deflector for deflecting an electron beam in accordance with an analog signal corresponding to a digital signal which specifies an exposure region of a sample and an electrostatic-type deflector for deflecting the electron beam to a desired position in the exposure region. A difference signal representing the difference between the analog signal and a reference analog signal corresponding to the digital signal is taken out for compensating the amount of deflection of the electron beam in the electrostatic-type deflector.

摘要翻译： 电子束曝光装置包括电磁型偏转器，用于根据对应于指定样本的曝光区域的数字信号的模拟信号和用于将电子束偏转到期望位置的静电型偏转器来偏转电子束 在曝光区域。 取出表示对应于数字信号的模拟信号和参考模拟信号之间的差异的差分信号，以补偿静电型偏转器中的电子束的偏转量。

公开(公告)号：US6046459A

公开(公告)日：2000-04-04

申请号：US401943

申请日：1999-09-23

申请人： Nobuyuki Yasutake ,  Yoshihisa Ooae ,  Kazushi Ishida ,  Hiroshi Yasuda ,  Akiyoshi Tsuda ,  Hitoshi Tanaka

发明人： Nobuyuki Yasutake ,  Yoshihisa Ooae ,  Kazushi Ishida ,  Hiroshi Yasuda ,  Akiyoshi Tsuda ,  Hitoshi Tanaka

IPC分类号： G03F7/20 ,  H01J37/317 ,  H01J37/20

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/2037 ,  G03F7/2065 ,  H01J37/3174 ,  H01J2237/31774

摘要： With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.

摘要翻译： 通过使用一个扫描台19，其中通过设置在扫描台19下方的晶片保持器20A至20E和平衡台21安装多个晶片16A至16E，基于多个带电粒子束曝光共同的曝光数据扫描扫描台19 扫描装置10A至10E以及平衡级21，使得扫描级19和平衡级21的重心G成为固定点。 测量固定在工作台19上的反射镜70L和70R的位置，并且基于它们的值，计算级19的伸缩比和样品16A至16E的位置以获得位置与目标位置的偏差。 阶段19被建模为刚性区域19A至19E松散地连接，并且对于每个区域，测量三个点的位置以计算由于每个脊状区域的旋转引起的曝光目标位置的偏差。 这些偏差由偏转器18A至18D校正。

公开(公告)号：US08536002B2

公开(公告)日：2013-09-17

申请号：US13567552

申请日：2012-08-06

申请人： Hiroshi Yasuda ,  Berthold Staufer

发明人： Hiroshi Yasuda ,  Berthold Staufer

IPC分类号： H01L21/8238

CPC分类号： H01L27/0623 ,  H01L21/8249 ,  H01L29/1004 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7833

摘要： A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent field oxide, and concurrently implanting the MOS gate layer and the polycrystalline region of the base layer, so that the base-collector junction extends into the substrate less than one-third of the depth of the field oxide, and vertically cumulative doping density of the polycrystalline region of the base layer is between 80 percent and 125 percent of a vertically cumulative doping density of the MOS gate. An integrated circuit containing a bipolar transistor and an MOS transistor formed by the described process.

摘要翻译： 通过使用非选择性外延工艺形成双极型晶体管的基极层，使得基极层在集电极有源区域上具有单一结晶区域和多晶硅层，形成包含双极晶体管和MOS晶体管的集成电路的工艺 区域，并且同时注入基极层的MOS栅极层和多晶区域，使得基极 - 集电极结延伸到小于场氧化物深度的三分之一的衬底中，并且垂直累积掺杂 基极层的多晶区域的密度在MOS栅极的垂直累积掺杂密度的80％至125％之间。 包含双极晶体管和通过所描述的工艺形成的MOS晶体管的集成电路。

公开(公告)号：US08450179B2

公开(公告)日：2013-05-28

申请号：US11670729

申请日：2007-02-02

申请人： Badih El-Kareh ,  Hiroshi Yasuda ,  Scott Balster

发明人： Badih El-Kareh ,  Hiroshi Yasuda ,  Scott Balster

IPC分类号： H01L21/331

CPC分类号： H01L29/7378 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/0825 ,  H01L29/66242

摘要： A method for fabricating a semiconductor device having a first and second bipolar devices of the same dopant type includes: depositing a dielectric layer over a semiconductor layer, depositing a gate conductor layer over the dielectric layer, defining base regions of both bipolar devices, removing the gate conductor layer and dielectric layer in the base regions, depositing a base layer on the gate conductor layer and on the exposed semiconductor layer in the base regions, depositing an insulating layer over the base layer, forming a photoresist layer and defining emitter regions of both bipolar devices, removing the photoresist layer in the emitter regions thereby forming two emitter windows, masking the emitter window of the first bipolar device and exposing the base layer in the base region of the second bipolar device to an additional emitter implant through the associated emitter window.

摘要翻译： 一种用于制造具有相同掺杂剂类型的第一和第二双极器件的半导体器件的方法包括：在半导体层上沉积介电层，在电介质层上沉积栅极导体层，限定两个双极器件的基极区域， 栅极导体层和电介质层，在栅极导体层和基极区域的暴露的半导体层上沉积基底层，在基底层上沉积绝缘层，形成光致抗蚀剂层并限定两者的发射极区域 去除发射极区域中的光致抗蚀剂层，从而形成两个发射器窗口，掩蔽第一双极器件的发射极窗口，并将第二双极器件的基极区域中的基极层通过相关的发射极窗口暴露于另外的发射体注入 。

公开(公告)号：US08222619B2

公开(公告)日：2012-07-17

申请号：US12586717

申请日：2009-09-25

申请人： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

发明人： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

IPC分类号： A61N5/00 ,  G21G5/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/24507 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542

摘要： A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

摘要翻译： 多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各列电池的电子束，使得在列中使用的电子束的性质 细胞可以大致相同。 电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。 电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

公开(公告)号：US20110226967A1

公开(公告)日：2011-09-22

申请号：US13068995

申请日：2011-05-25

申请人： Akio Yamada ,  Tomohiro Sakazaki ,  Hiroshi Yasuda

发明人： Akio Yamada ,  Tomohiro Sakazaki ,  Hiroshi Yasuda

IPC分类号： G21K5/00

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.

摘要翻译： 一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整 基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。 绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。