-
公开(公告)号：US5893948A
公开(公告)日：1999-04-13
申请号：US630955
申请日：1996-04-05
IPC分类号： H01L31/04 , C30B13/00 , H01L21/20 , H01L21/336 , H01L29/786 , C30B13/06
CPC分类号： C30B29/06 , C30B13/00 , Y10S117/902
摘要： The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer is formed over the substrate covering the plurality of silicon nucleation sites. The amorphous silicon layer is melted by using a laser beam and then crystallized to form the plurality of single silicon crystals. Each of the plurality of single silicon crystals correspond to one of the plurality of nucleation sites.
摘要翻译： 本发明提供了一种在衬底上形成多个单晶硅晶体的方法。 该方法在衬底上形成多个成核位点。 在覆盖多个硅成核位置的衬底上形成非晶硅层。 通过使用激光束熔化非晶硅层，然后结晶以形成多个单晶硅晶体。 多个单晶硅晶体中的每一个对应于多个成核位点中的一个。
-
2.发明授权Hybrid sensor pixel architecture with gate line and drive line synchronization 失效混合传感器像素结构，具有栅极线和驱动线同步公开(公告)号：US06252215B1
公开(公告)日：2001-06-26
申请号：US09069053
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01J4014
CPC分类号： H01L27/14643 , H01L27/14609 , H04N5/3741
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Gate line and drive voltage line synchronization is provided.
摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。 提供栅极线和驱动电压线同步。
-
公开(公告)号：US6051827A
公开(公告)日：2000-04-18
申请号：US67941
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H01J40/14
CPC分类号： H01L27/14609
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Threshold response is provided.
摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。 提供阈值响应。
-
公开(公告)号：US6005238A
公开(公告)日：1999-12-21
申请号：US67942
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H03F3/08 , H01J40/14
CPC分类号： H01L27/14609 , H03F3/082
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Linearization of output response is provided.
摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。 提供输出响应的线性化。
-
公开(公告)号：US6031248A
公开(公告)日：2000-02-29
申请号：US67657
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/46
CPC分类号： H01L27/14609 , H01L27/14643
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.
摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。
-
6.发明授权Methods for and applications of making buried structures in semiconductor thin films 失效在半导体薄膜中制作掩埋结构的方法和应用
公开(公告)号：US5821135A
公开(公告)日：1998-10-13
申请号：US730981
申请日：1996-10-16
CPC分类号： H01L21/2026
摘要： A transparent substrate as formed on its front side a layer of amorphous silicon. A laser beam is used to irradiate through the backside of the transparent substrate in order to form buried nucleation sites within the amorphous silicon. The buried nucleation sites which are used as nucleation seeds are then used during a front side crystallization process in order to form large single silicon crystals over the substrate surface.
摘要翻译： 在其正面形成非晶硅层的透明基板。 使用激光束照射穿过透明基板的背面，以便在非晶硅内形成掩埋的成核位置。 然后在前侧结晶过程中使用用作成核种子的掩埋成核位点，以便在基材表面上形成大的单硅晶体。
-
7.发明授权Continuous amorphous silicon layer sensors using doped poly-silicon back contact 有权连续非晶硅层传感器采用掺杂多晶硅背接触公开(公告)号：US06288435B1
公开(公告)日：2001-09-11
申请号：US09473578
申请日：1999-12-28
申请人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
发明人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
IPC分类号： H01L31075
CPC分类号： H01L27/14603 , H01L27/14665
摘要： A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.
摘要翻译： 描述了用于减少高填充因子传感器阵列中的垂直泄漏电流的方法和装置。 通过消除在金属背接触和本征非晶硅层之间发生的肖特基结界面来实现垂直漏电流的减小。 消除肖特基结的一种方法使用N掺杂非晶硅的超宽区域作为金属背接触和本征非晶硅层之间的缓冲区。 消除肖特基结的另一种方法用诸如N掺杂多晶硅的替代材料完全替代金属背接触和N掺杂的非晶硅层。
-
8.发明授权公开(公告)号：US06300648B1
公开(公告)日：2001-10-09
申请号：US09473579
申请日：1999-12-28
申请人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
发明人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
IPC分类号： H01L2904
CPC分类号： H01L29/458 , H01L29/78609 , H01L31/1055
摘要： A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.
摘要翻译： 描述了用于减少高填充因子传感器阵列中的垂直泄漏电流的方法和装置。 通过消除在金属背接触和本征非晶硅层之间发生的肖特基结界面来实现垂直漏电流的减小。 消除肖特基结的一种方法使用N掺杂非晶硅的超宽区域作为金属背接触和本征非晶硅层之间的缓冲区。 消除肖特基结的另一种方法用诸如N掺杂多晶硅的替代材料完全替代金属背接触和N掺杂非晶硅层。
-
公开(公告)号：US6020223A
公开(公告)日：2000-02-01
申请号：US959590
申请日：1997-10-29
IPC分类号： H01L21/223 , H01L21/225 , H01L21/266 , H01L21/336 , H01L27/144 , H01L27/146 , H01L29/786 , H01L31/0216 , H01L21/00 , H01L21/84
CPC分类号： H01L29/78696 , H01L21/223 , H01L21/2236 , H01L21/2254 , H01L21/2255 , H01L21/266 , H01L27/1443 , H01L27/14603 , H01L29/66757 , H01L29/66765 , H01L29/78669 , H01L31/02162 , H01L31/02165 , Y10S438/94
摘要： A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to light at the photolithography wavelength, but reflective or opaque at the laser wavelength. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.
-
公开(公告)号：US5733641A
公开(公告)日：1998-03-31
申请号：US656460
申请日：1996-05-31
申请人： David K. Fork , James B. Boyce , Ping Mei , Steve Ready , Richard I. Johnson , Greg B. Anderson
发明人： David K. Fork , James B. Boyce , Ping Mei , Steve Ready , Richard I. Johnson , Greg B. Anderson
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205 , H01L21/336 , H01L27/12 , H01L29/786 , B32B15/00
CPC分类号： H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02675 , Y10S438/967 , Y10T428/24479 , Y10T428/24926 , Y10T428/265
摘要： The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer has a melting point higher than a melting point of the substrate. A polycrystalline silicon layer is formed by crystallizing the silicon layer using a laser beam.
摘要翻译： 本发明提供一种缓冲衬底，其包括衬底，缓冲层和硅层。 缓冲层设置在基板和硅层之间。 缓冲层的熔点高于基板的熔点。 通过使用激光束使硅层结晶来形成多晶硅层。
-
-
-
-
-
-
-
-
-
搜索结果
30 条记录 (耗时 0.025 秒)
