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    Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer
    4.
    发明授权
    Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer 失效
    具有YSZ外延阻挡层和外延超导层的硅衬底

    公开(公告)号：US5358925A

    公开(公告)日：1994-10-25

    申请号：US927791

    申请日：1992-08-10

    申请人： George A. Neville Connell ,  David B. Fenner ,  James B. Boyce ,  David K. Fork

    发明人： George A. Neville Connell ,  David B. Fenner ,  James B. Boyce ,  David K. Fork

    IPC分类号： C30B23/02 ,  H01L39/24 ,  H01L39/22 ,  H01L39/12

    CPC分类号： H01L39/2458 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225

    摘要： An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-. 0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.

    摘要翻译： 外延沉积在单晶硅衬底表面上的YSZ缓冲层上的HTSC材料具有至少85°K的零电阻转变温度，不超过1.0°K的转变宽度（10-90％）， 在300°K的电阻率不超过300微欧姆厘米，电阻率比（300°K / 100°K）为3.0 +/- 0.2。 使用旋转蚀刻工艺清洁硅衬底的表面，以产生用诸如氢的元素的原子层终止的不与硅反应的原子清洁表面。 衬底可以移动到沉积室而没有污染。 氢气在室中蒸发，然后优选通过激光烧蚀外延沉积YSZ。 此后，优选通过激光烧蚀外延沉积诸如YBCO的HTSC材料。 然后将结构在氧气气氛中冷却。

    Silicon substrate having an epitaxial superconducting layer thereon and method of making same
    5.
    发明授权
    Silicon substrate having an epitaxial superconducting layer thereon and method of making same 失效
    具有外延超导层的硅衬底及其制造方法

    公开(公告)号：US5173474A

    公开(公告)日：1992-12-22

    申请号：US667669

    申请日：1991-03-11

    申请人： George A. N. Connell ,  David B. Fenner ,  James B. Boyce ,  David K. Fork

    发明人： George A. N. Connell ,  David B. Fenner ,  James B. Boyce ,  David K. Fork

    IPC分类号： C30B23/02 ,  H01L39/24

    CPC分类号： H01L39/2458 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S505/701 ,  Y10S505/729 ,  Y10S505/73 ,  Y10S505/731 ,  Y10S505/732 ,  Y10S505/734

    摘要： An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-.0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.

    摘要翻译： 外延沉积在单晶硅衬底表面上的YSZ缓冲层上的HTSC材料具有至少85°K的零电阻转变温度，不超过1.0°K的转变宽度（10-90％）， 在300°K的电阻率不超过300微欧姆厘米，电阻率比（300°K / 100°K）为3.0 +/- 0.2。 使用旋转蚀刻工艺清洁硅衬底的表面，以产生用诸如氢的元素的原子层终止的不与硅反应的原子清洁表面。 衬底可以移动到沉积室而没有污染。 氢气在室中蒸发，然后优选通过激光烧蚀外延沉积YSZ。 此后，优选通过激光烧蚀外延沉积诸如YBCO的HTSC材料。 然后将结构在氧气气氛中冷却。

    Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources
    6.
    发明授权
    Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources 有权
    具有微弹簧互连的非晶硅传感器，用于实现集成发光源的高均匀性

    公开(公告)号：US06794725B2

    公开(公告)日：2004-09-21

    申请号：US09469122

    申请日：1999-12-21

    申请人： Francesco Lemmi ,  Christopher L. Chua ,  Ping Mei ,  JengPing Lu ,  David K. Fork ,  Harry J. McIntyre

    发明人： Francesco Lemmi ,  Christopher L. Chua ,  Ping Mei ,  JengPing Lu ,  David K. Fork ,  Harry J. McIntyre

    IPC分类号： H01L3100

    CPC分类号： H01L31/1055 ,  B41J2/45 ,  H01L25/0753 ,  H01L31/1016 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01S5/02 ,  H01S5/0262 ,  H01S5/4025 ,  H01L2924/00

    摘要： A hybrid structure or device is provided wherein carried on a single substrate is at least one micro-spring interconnect having an elastic material that is initially fixed to a surface of the substrate, an anchor portion which is fixed to the substrate surface and a free portion. The spring contact is self-assembling in that as the free portion is released it moves out of the plane of the substrate. Also integrated on the substrate is a sensor having an active layer and contacts. The substrate and sensor may be formed of materials which are somewhat partially transparent to light at certain infrared wavelengths. The integrated sensor/spring contact configuration may be used in an imaging system to sense output from a light source which is used for image formation. The light source may be a laser array, LED array or other appropriate light source. The sensor is appropriately sized to sense all or some part of light from the light source. The sensor may also be sufficiently transparent so that light is not blocked from its emission path, with a contrast ratio such that it only absorbs a small fraction of light passing therethrough. An additional characteristic is that the manufacturing process is compatible with the manufacturing process for the micro-spring interconnects. Data from the sensor is used as light source correction information. This information is provided to a calibration configuration which allows for calibration of high-speed systems.

    摘要翻译： 提供了一种混合结构或装置，其中承载在单个基板上的是具有弹性材料的至少一个微弹簧互连，弹性材料最初固定到基板的表面，固定到基板表面的锚定部分和自由部分 。 弹簧接触件是自组装的，因为随着自由部分的释放，它移出基板的平面。 还集成在基板上的是具有有源层和触点的传感器。 衬底和传感器可以由对某些红外波长的光稍微部分透明的材料形成。 集成的传感器/弹簧接触配置可用于成像系统中以感测用于图像形成的光源的输出。 光源可以是激光阵列，LED阵列或其他合适的光源。 传感器的尺寸适当，可以感测来自光源的全部或部分光线。 传感器也可以是足够透明的，使得光不被其发射路径阻挡，对比度使得其仅吸收通过其中的一小部分光。 另外的特征是制造工艺与微弹簧互连的制造工艺兼容。 来自传感器的数据用作光源校正信息。 该信息被提供给允许校准高速系统的校准配置。