公开(公告)号：US10316409B2

公开(公告)日：2019-06-11

申请号：US13842054

申请日：2013-03-15

申请人： Novellus Systems, Inc.

发明人： Bart J. van Schravendijk

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/455

摘要： A radical source for supplying radicals during atomic layer deposition semiconductor processing operations is provided. The radical source may include a remote volume, a baffle volume, and a baffle that partitions the remote volume from the baffle volume. The baffle volume and the remote volume may be fluidly connected through the baffle via a plurality of baffle holes. The baffle may be offset from a faceplate with a plurality of first gas distribution holes fluidly connected with the baffle volume. A baffle gas inlet may be fluidly connected with the baffle volume, and a first process gas inlet may be fluidly connected with the remote volume. Baffle gas may be flowed into the baffle volume to prevent radicalized first process gas in the remote volume from flowing through the baffle volume and the faceplate.

公开(公告)号：US09230800B2

公开(公告)日：2016-01-05

申请号：US14231554

申请日：2014-03-31

申请人： Novellus Systems, Inc.

发明人： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/67 ,  H01L21/762 ,  H01L21/768

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20140235069A1

公开(公告)日：2014-08-21

申请号：US13934620

申请日：2013-07-03

申请人： Novellus Systems, Inc.

发明人： Patrick G. Breiling ,  Bhadri N. Varadarajan ,  Jennifer L. Petraglia ,  Bart J. van Schravendijk ,  Karl F. Leeser ,  Mandyam Ammanjee Sriram ,  Rachel E. Batzer

IPC分类号： H01L21/02 ,  F28F3/02 ,  H01L21/67

CPC分类号： F28F3/02 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522

摘要： An apparatus for use with radical sources for supplying radicals during semiconductor processing operations is provided. The apparatus may include a stack of plates or components that form a faceplate assembly. The faceplate assembly may include a radical diffuser plate, a precursor delivery plate, and a thermal isolator interposed between the radical diffuser plate and the precursor delivery plate. The faceplate assembly may have a pattern of radical through-holes with centerlines substantially perpendicular to the radical diffuser plate. The thermal isolator may be configured to regulate heat flow between the radical diffuser plate and the precursor delivery plate.

摘要翻译： 提供一种用于在半导体处理操作期间提供自由基的自由基源的装置。 该装置可以包括形成面板组件的一叠板或组件。 面板组件可以包括自由基扩散板，前体输送板和插入在自由基扩散板和前体输送板之间的热隔离器。 面板组件可以具有基本上垂直于自由基扩散板的中心线的自由基通孔的图案。 热隔离器可以被配置为调节自由基扩散板和前体输送板之间的热流。

公开(公告)号：US20140209562A1

公开(公告)日：2014-07-31

申请号：US14231554

申请日：2014-03-31

申请人： Novellus Systems, Inc.

发明人： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20230366094A1

公开(公告)日：2023-11-16

申请号：US18351681

申请日：2023-07-13

申请人： Novellus Systems, Inc.

发明人： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC分类号： C23C16/50 ,  H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/52 ,  C23C16/509 ,  H01L21/67 ,  H01L21/02 ,  C23C16/24 ,  C23C16/54

CPC分类号： C23C16/50 ,  H01J37/32137 ,  C23C16/45565 ,  H01J37/32155 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45574 ,  C23C16/52 ,  C23C16/509 ,  H01L21/67207 ,  C23C16/45523 ,  H01L21/02164 ,  H01L21/67201 ,  C23C16/24 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/02123 ,  H01L21/022 ,  C23C16/45512 ,  H01L21/02274

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

公开(公告)号：US20150013607A1

公开(公告)日：2015-01-15

申请号：US14262196

申请日：2014-04-25

申请人： Novellus Systems, Inc.

发明人： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32137 ,  H01J37/32155 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

摘要翻译： 描述了一种用于原位沉积薄膜叠层（即没有真空断裂或空气曝光）的设备。 在一个示例中，提供了一种等离子体增强化学气相沉积设备，其被配置为在基板上沉积多个膜层而不将基板暴露于膜沉积阶段之间的真空断裂。 该装置包括处理室，等离子体源和被配置为在特定沉积阶段期间使用特定反应气体混合物来控制等离子体源以产生反应物自由基的控制器，并且在从期间提供的特定反应气体混合物的转变期间维持等离子体 在不同沉积阶段期间提供的不同反应气体混合物的特定沉积阶段。

公开(公告)号：US11053587B2

公开(公告)日：2021-07-06

申请号：US16434043

申请日：2019-06-06

申请人： Novellus Systems, Inc.

发明人： Bart J. van Schravendijk

IPC分类号： C23C16/455

摘要： A radical source for supplying radicals during atomic layer deposition semiconductor processing operations is provided. The radical source may include a remote volume, a baffle volume, and a baffle that partitions the remote volume from the baffle volume. The baffle volume and the remote volume may be fluidly connected through the baffle via a plurality of baffle holes. The baffle may be offset from a faceplate with a plurality of first gas distribution holes fluidly connected with the baffle volume. A baffle gas inlet may be fluidly connected with the baffle volume, and a first process gas inlet may be fluidly connected with the remote volume. Baffle gas may be flowed into the baffle volume to prevent radicalized first process gas in the remote volume from flowing through the baffle volume and the faceplate.

公开(公告)号：US20190301013A1

公开(公告)日：2019-10-03

申请号：US16434043

申请日：2019-06-06

申请人： Novellus Systems, Inc.

发明人： Bart J. van Schravendijk

IPC分类号： C23C16/455

摘要： A radical source for supplying radicals during atomic layer deposition semiconductor processing operations is provided. The radical source may include a remote volume, a baffle volume, and a baffle that partitions the remote volume from the baffle volume. The baffle volume and the remote volume may be fluidly connected through the baffle via a plurality of baffle holes. The baffle may be offset from a faceplate with a plurality of first gas distribution holes fluidly connected with the baffle volume. A baffle gas inlet may be fluidly connected with the baffle volume, and a first process gas inlet may be fluidly connected with the remote volume. Baffle gas may be flowed into the baffle volume to prevent radicalized first process gas in the remote volume from flowing through the baffle volume and the faceplate.

公开(公告)号：US10214816B2

公开(公告)日：2019-02-26

申请号：US14262196

申请日：2014-04-25

申请人： Novellus Systems, Inc.

发明人： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC分类号： C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.