公开(公告)号：US20050006749A1

公开(公告)日：2005-01-13

申请号：US10916445

申请日：2004-08-12

申请人： Nozomi Shimoishizaka ,  Ryuichi Sahara ,  Yoshifumi Nakamura ,  Takahiro Kumakawa ,  Shinji Murakami ,  Yutaka Harada

发明人： Nozomi Shimoishizaka ,  Ryuichi Sahara ,  Yoshifumi Nakamura ,  Takahiro Kumakawa ,  Shinji Murakami ,  Yutaka Harada

IPC分类号： H01L23/12 ,  H01L23/31 ,  H01L23/485 ,  H01L21/4763 ,  H01L23/02 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/3114 ,  H01L23/3171 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05571 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005

摘要： A low elasticity layer (20) having an opening in an electrode arranging area where element electrodes are disposed is provided on a main surface of a semiconductor substrate (10). On the low elasticity layer (20), lands (32) serving as external electrodes are disposed, and pads (30) on the element electrodes, the lands (32) and metal wires (31) for connecting them are integrally formed as a metal wiring pattern (33). A solder resist film (50) having an opening for exposing a part of each land (32) is formed, and a metal ball (40) is provided on the land (32) in the opening. The low elasticity layer (20) absorbs thermal stress and the like caused in heating or cooling the semiconductor device, so as to prevent disconnection of the metal wires (31).

摘要翻译： 在半导体衬底（10）的主表面上设置有在电极配置区域中设置有元件电极的开口的低弹性层（20）。 在低弹性层（20）上设置用作外部电极的焊盘（32），并且元件电极上的焊盘（30），用于连接的焊盘（32）和金属丝（31）一体地形成为金属 接线图案（33）。 形成具有用于暴露每个焊盘（32）的一部分的开口的阻焊膜（50），并且金属球（40）设置在开口中的焊盘（32）上。 低弹性层（20）吸收在加热或冷却半导体器件时引起的热应力等，以防止金属线（31）的断开。

公开(公告)号：US06812573B2

公开(公告)日：2004-11-02

申请号：US09886971

申请日：2001-06-25

申请人： Nozomi Shimoishizaka ,  Ryuichi Sahara ,  Yoshifumi Nakamura ,  Takahiro Kumakawa ,  Shinji Murakami ,  Yutaka Harada

发明人： Nozomi Shimoishizaka ,  Ryuichi Sahara ,  Yoshifumi Nakamura ,  Takahiro Kumakawa ,  Shinji Murakami ,  Yutaka Harada

IPC分类号： H01L2348

CPC分类号： H01L23/3114 ,  H01L23/3171 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05571 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005

摘要： A low elasticity layer (20) having an opening in an electrode arranging area where element electrodes are disposed is provided on a main surface of a semiconductor substrate (10). On the low elasticity layer (20), lands (32) serving as external electrodes are disposed, and pads (30) on the element electrodes, the lands (32) and metal wires (31) for connecting them are integrally formed as a metal wiring pattern (33). A solder resist film (50) having an opening for exposing a part of each land (32) is formed, and a metal ball (40) is provided on the land (32) in the opening. The low elasticity layer (20) absorbs thermal stress and the like caused in heating or cooling the semiconductor device, so as to prevent disconnection of the metal wires (31).

摘要翻译： 在半导体衬底（10）的主表面上设置有在电极配置区域中设置有元件电极的开口的低弹性层（20）。 在低弹性层（20）上设置用作外部电极的焊盘（32），并且元件电极上的焊盘（30），用于连接的焊盘（32）和金属丝（31）一体地形成为金属 布线图案（33）。 形成具有用于暴露每个焊盘（32）的一部分的开口的阻焊膜（50），并且金属球（40）设置在开口中的焊盘（32）上。 低弹性层（20）吸收在加热或冷却半导体器件时引起的热应力等，以防止金属线（31）的断开。

公开(公告)号：US06313532B1

公开(公告)日：2001-11-06

申请号：US09381381

申请日：1999-09-20

申请人： Nozomi Shimoishizaka ,  Ryuichi Sahara ,  Yoshifumi Nakamura ,  Takahiro Kumakawa ,  Shinji Murakami ,  Yutaka Harada

发明人： Nozomi Shimoishizaka ,  Ryuichi Sahara ,  Yoshifumi Nakamura ,  Takahiro Kumakawa ,  Shinji Murakami ,  Yutaka Harada

IPC分类号： H01L2348

CPC分类号： H01L23/3114 ,  H01L23/3171 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05571 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005

摘要： A low elasticity layer (20) having an opening in an electrode arranging area where element electrodes are disposed is provided on a main surface of a semiconductor substrate (10). On the low elasticity layer (20), lands (32) serving as external electrodes are disposed, and pads (30) on the element electrodes, the lands (32) and metal wires (31) for connecting them are integrally formed as a metal wiring pattern (33). A solder resist film (50) having an opening for exposing a part of each land (32) is formed, and a metal ball (40) is provided on the land (32) in the opening. The low elasticity layer (20) absorbs thermal stress and the like caused in heating or cooling the semiconductor device, so as to prevent disconnection of the metal wires (31).

摘要翻译： 在半导体衬底（10）的主表面上设置有在电极配置区域中设置有元件电极的开口的低弹性层（20）。 在低弹性层（20）上设置用作外部电极的焊盘（32），并且元件电极上的焊盘（30），用于连接的焊盘（32）和金属丝（31）一体地形成为金属 布线图案（33）。 形成具有用于暴露每个焊盘（32）的一部分的开口的阻焊膜（50），并且金属球（40）设置在开口中的焊盘（32）上。 低弹性层（20）吸收在加热或冷却半导体器件时引起的热应力等，以防止金属线（31）的断开。

公开(公告)号：US06559528B2

公开(公告)日：2003-05-06

申请号：US09785503

申请日：2001-02-20

申请人： Kazumi Watase ,  Hiroaki Fujimoto ,  Ryuichi Sahara ,  Nozomi Shimoishizaka ,  Takahiro Kumakawa ,  Kazuyuki Kaino ,  Yoshifumi Nakamura

发明人： Kazumi Watase ,  Hiroaki Fujimoto ,  Ryuichi Sahara ,  Nozomi Shimoishizaka ,  Takahiro Kumakawa ,  Kazuyuki Kaino ,  Yoshifumi Nakamura

IPC分类号： H01L23498

CPC分类号： H01L24/97 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/49872 ,  H01L24/45 ,  H01L24/48 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/85399 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/45015 ,  H01L2924/207

摘要： Disclosed is a semiconductor device 10 comprising a first semiconductor element 11 with an arrangement of first element electrodes 12, a second semiconductor element 13 with an arrangement of second element electrodes 14, a connection member 15 electrically connecting together a portion 12b of the first element electrodes 12 and the second element electrodes 14, an insulation layer 17 covering a major surface 11a of the first semiconductor element 11 and a backside surface 13b of the second semiconductor element 13, a wiring layer 22 formed on the insulation layer 17 and electrically connected to the first element electrode portion 12b exposed in an opening portion 21, and an external electrode 23 formed, as a portion of the wiring layer 22, on the insulation layer 17.

摘要翻译： 公开了一种半导体器件10，其包括具有第一元件电极12的布置的第一半导体元件11，具有第二元件电极14的布置的第二半导体元件13，将第一元件电极的部分12b电连接在一起的连接构件15 12和第二元件电极14，覆盖第一半导体元件11的主表面11a和第二半导体元件13的背面13b的绝缘层17，形成在绝缘层17上并电连接到第二半导体元件13的布线层22的布线层22。 露出在开口部分21中的第一元件电极部分12b和作为布线层22的一部分形成在绝缘层17上的外部电极23。

公开(公告)号：US06924173B2

公开(公告)日：2005-08-02

申请号：US10387457

申请日：2003-03-14

申请人： Kazumi Watase ,  Hiroaki Fujimoto ,  Ryuichi Sahara ,  Nozomi Shimoishizaka ,  Takahiro Kumakawa ,  Kazuyuki Kaino ,  Yoshifumi Nakamura

发明人： Kazumi Watase ,  Hiroaki Fujimoto ,  Ryuichi Sahara ,  Nozomi Shimoishizaka ,  Takahiro Kumakawa ,  Kazuyuki Kaino ,  Yoshifumi Nakamura

IPC分类号： H01L25/18 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065 ,  H01L25/07 ,  H01L21/58

CPC分类号： H01L24/97 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/49872 ,  H01L24/45 ,  H01L24/48 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/85399 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/45015 ,  H01L2924/207

摘要： Disclosed is a semiconductor device 10 comprising a first semiconductor element 11 with an arrangement of first element electrodes 12, a second semiconductor element 13 with an arrangement of second element electrodes 14, a connection member 15 electrically connecting together a portion 12b of the first element electrodes 12 and the second element electrodes 14, an insulation layer 17 covering a major surface 11a of the first semiconductor element 11 and a backside surface 13b of the second semiconductor element 13, a wiring layer 22 formed on the insulation layer 17 and electrically connected to the first element electrode portion 12b exposed in an opening portion 21, and an external electrode 23 formed, as a portion of the wiring layer 22, on the insulation layer 17.

摘要翻译： 公开了一种半导体器件10，其包括具有第一元件电极12的布置的第一半导体元件11，具有第二元件电极14的布置的第二半导体元件13，连接构件15，其将第一元件 电极12和第二元件电极14，覆盖第一半导体元件11的主表面11a和第二半导体元件13的背面13b的绝缘层17，形成在绝缘层17上的布线层22， 连接到暴露在开口部分21中的第一元件电极部分12b和形成为绝缘层17上的布线层22的一部分的外部电极23。

公开(公告)号：US07279357B2

公开(公告)日：2007-10-09

申请号：US11122094

申请日：2005-05-05

申请人： Nozomi Shimoishizaka ,  Kazuyuki Kaino ,  Yoshifumi Nakamura ,  Keiji Miki ,  Kazumi Watase ,  Ryuichi Sahara

发明人： Nozomi Shimoishizaka ,  Kazuyuki Kaino ,  Yoshifumi Nakamura ,  Keiji Miki ,  Kazumi Watase ,  Ryuichi Sahara

IPC分类号： H01L21/311 ,  H01L21/3205 ,  H01L23/48

CPC分类号： H01L23/3114 ,  H01L23/5227 ,  H01L2224/0401 ,  H01L2224/05555 ,  H01L2924/3011 ,  H01L2924/00014

摘要： A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. The first insulating film of an insulating resin material is formed on the main surface of the semiconductor chip, covers the integrated circuit, and includes a plurality of contact holes provided on the respective pad electrodes. The inductor is formed on the inductor formation region of the first insulating film, and both terminals of the inductor are connected to the pad electrodes through the contact holes, respectively. The inductor formation region of the first insulating film is formed thicker than a portion of the first insulating film around the contact hole.

摘要翻译： 半导体器件具有半导体芯片，第一绝缘膜和电感器。 半导体芯片包括形成在芯片的主表面上的集成电路和形成在芯片的主表面上并电连接到集成电路的多个焊盘电极。 绝缘树脂材料的第一绝缘膜形成在半导体芯片的主表面上，覆盖集成电路，并且包括设置在各个焊盘电极上的多个接触孔。 电感器形成在第一绝缘膜的电感器形成区域上，并且电感器的两个端子分别通过接触孔连接到焊盘电极。 第一绝缘膜的电感器形成区域形成为比接触孔周围的第一绝缘膜的一部分厚。

公开(公告)号：US06784557B2

公开(公告)日：2004-08-31

申请号：US10307450

申请日：2002-12-02

申请人： Yoshifumi Nakamura ,  Ryuichi Sahara ,  Nozomi Shimoishizaka ,  Kazuyuki Kainou ,  Keiji Miki ,  Kazumi Watase ,  Yasutake Yaguchi

发明人： Yoshifumi Nakamura ,  Ryuichi Sahara ,  Nozomi Shimoishizaka ,  Kazuyuki Kainou ,  Keiji Miki ,  Kazumi Watase ,  Yasutake Yaguchi

IPC分类号： H01L2348

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/013

摘要： The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.

摘要翻译： 半导体器件包括在其表面上形成有电极的半导体元件和形成在半导体元件的表面上并与电极电连接的金属布线。 金属布线具有用作外部电极的外部电极部分。 外部电极部分的厚度大于金属布线的非电极部分的厚度，即除了外部电极部分之外的金属布线的一部分。

公开(公告)号：US20050199979A1

公开(公告)日：2005-09-15

申请号：US11122094

申请日：2005-05-05

申请人： Nozomi Shimoishizaka ,  Kazuyuki Kaino ,  Yoshifumi Nakamura ,  Keiji Miki ,  Kazumi Watase ,  Ryuichi Sahara

发明人： Nozomi Shimoishizaka ,  Kazuyuki Kaino ,  Yoshifumi Nakamura ,  Keiji Miki ,  Kazumi Watase ,  Ryuichi Sahara

IPC分类号： H01L21/768 ,  H01L21/822 ,  H01L23/12 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L27/04 ,  H01L29/00

CPC分类号： H01L23/3114 ,  H01L23/5227 ,  H01L2224/0401 ,  H01L2224/05555 ,  H01L2924/3011 ,  H01L2924/00014

摘要： A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. The first insulating film of an insulating resin material is formed on the main surface of the semiconductor chip, covers the integrated circuit, and includes a plurality of contact holes provided on the respective pad electrodes. The inductor is formed on the inductor formation region of the first insulating film, and both terminals of the inductor are connected to the pad electrodes through the contact holes, respectively. The inductor formation region of the first insulating film is formed thicker than a portion of the first insulating film around the contact hole.

摘要翻译： 半导体器件具有半导体芯片，第一绝缘膜和电感器。 半导体芯片包括形成在芯片的主表面上的集成电路和形成在芯片的主表面上并电连接到集成电路的多个焊盘电极。 绝缘树脂材料的第一绝缘膜形成在半导体芯片的主表面上，覆盖集成电路，并且包括设置在各个焊盘电极上的多个接触孔。 电感器形成在第一绝缘膜的电感器形成区域上，并且电感器的两个端子分别通过接触孔连接到焊盘电极。 第一绝缘膜的电感器形成区域形成为比接触孔周围的第一绝缘膜的一部分厚。

公开(公告)号：US06914331B2

公开(公告)日：2005-07-05

申请号：US10442139

申请日：2003-05-21

申请人： Nozomi Shimoishizaka ,  Kazuyuki Kaino ,  Yoshifumi Nakamura ,  Keiji Miki ,  Kazumi Watase ,  Ryuichi Sahara

发明人： Nozomi Shimoishizaka ,  Kazuyuki Kaino ,  Yoshifumi Nakamura ,  Keiji Miki ,  Kazumi Watase ,  Ryuichi Sahara

IPC分类号： H01L21/768 ,  H01L21/822 ,  H01L23/12 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L27/04 ,  H01L23/498

CPC分类号： H01L23/3114 ,  H01L23/5227 ,  H01L2224/0401 ,  H01L2224/05555 ,  H01L2924/3011 ,  H01L2924/00014

摘要： A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. The first insulating film of an insulating resin material is formed on the main surface of the semiconductor chip, covers the integrated circuit, and includes a plurality of contact holes provided on the respective pad electrodes. The inductor is formed on the inductor formation region of the first insulating film, and both terminals of the inductor are connected to the pad electrodes through the contact holes, respectively. The inductor formation region of the first insulating film is formed thicker than a portion of the first insulating film around the contact hole.

摘要翻译： 半导体器件具有半导体芯片，第一绝缘膜和电感器。 半导体芯片包括形成在芯片的主表面上的集成电路和形成在芯片的主表面上并电连接到集成电路的多个焊盘电极。 绝缘树脂材料的第一绝缘膜形成在半导体芯片的主表面上，覆盖集成电路，并且包括设置在各个焊盘电极上的多个接触孔。 电感器形成在第一绝缘膜的电感器形成区域上，并且电感器的两个端子分别通过接触孔连接到焊盘电极。 第一绝缘膜的电感器形成区域形成为比接触孔周围的第一绝缘膜的一部分厚。

公开(公告)号：US06954001B2

公开(公告)日：2005-10-11

申请号：US10919402

申请日：2004-08-17

申请人： Yoshifumi Nakamura ,  Ryuichi Sahara ,  Nozomi Shimoishizaka ,  Kazuyuki Kainou ,  Keiji Miki ,  Kazumi Watase ,  Yasutake Yaguchi

发明人： Yoshifumi Nakamura ,  Ryuichi Sahara ,  Nozomi Shimoishizaka ,  Kazuyuki Kainou ,  Keiji Miki ,  Kazumi Watase ,  Yasutake Yaguchi

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/12 ,  H01L23/482 ,  H01L23/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/013

摘要： The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.

摘要翻译： 半导体器件包括在其表面上形成有电极的半导体元件和形成在半导体元件的表面上并与电极电连接的金属布线。 金属布线具有用作外部电极的外部电极部分。 外部电极部分的厚度大于金属布线的非电极部分的厚度，即除了外部电极部分之外的金属布线的一部分。