公开(公告)号：US06331237B1

公开(公告)日：2001-12-18

申请号：US09387856

申请日：1999-09-01

申请人： Panayotis C. Andricacos ,  W. Jean Horkans ,  Keith T. Kwietniak ,  Peter S. Locke ,  Cyprian E. Uzoh

发明人： Panayotis C. Andricacos ,  W. Jean Horkans ,  Keith T. Kwietniak ,  Peter S. Locke ,  Cyprian E. Uzoh

IPC分类号： C25D2106

CPC分类号： C25D7/123 ,  C25D5/003 ,  C25D21/12 ,  C25D21/18

摘要： A method of reducing etching of a seed layer by a plating solution. Prior to introducing the semiconductor wafer with the seed layer into the plating solution, the etching power of the plating solution is diminished.

摘要翻译： 通过电镀液减少种子层的蚀刻的方法。 在将具有种子层的半导体晶片引入电镀液之前，电镀液的蚀刻功率降低。

公开(公告)号：US06979393B2

公开(公告)日：2005-12-27

申请号：US10055134

申请日：2002-01-22

申请人： Kenneth P. Rodbell ,  Panayotis C. Andricacos ,  Cyril Cabral, Jr. ,  Lynne M. Gignac ,  Cyprian E. Uzoh ,  Peter S. Locke

发明人： Kenneth P. Rodbell ,  Panayotis C. Andricacos ,  Cyril Cabral, Jr. ,  Lynne M. Gignac ,  Cyprian E. Uzoh ,  Peter S. Locke

IPC分类号： C25D3/38 ,  C25D5/00 ,  C25D5/10 ,  C25D7/12 ,  H05K3/42 ,  C25D5/02

CPC分类号： C25D5/10 ,  C25D3/38 ,  C25D5/00 ,  C25D7/123 ,  C25D21/02 ,  H05K3/423

摘要： A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as 1/10. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process. These parameters include the bath temperature, the bath agitation, the additive concentration in the plating bath, the plating current density utilized, the deposition rate of the copper film and the total thickness of the copper film deposited.

摘要翻译： 公开了一种在电子基板上镀铜导体的方法和形成的器件。 在该方法中，首先提供填充有保持在约0℃至约18℃之间的温度的电镀溶液的电镀铜浴。 然后将浸在电镀溶液中的电子基板上的铜层以单步骤或双步沉积工艺进行镀覆。 双步沉积方法更适合于在具有大纵横比的特征中沉积铜导体，例如具有大于1/3或高达1的直径/深度的纵横比的双镶嵌结构中的通孔 / 10。 各种电镀参数用于在单步沉积或双步沉积过程中提供短电阻瞬变。 这些参数包括浴温度，浴液搅拌，镀浴中的添加剂浓度，所用的电镀电流密度，铜膜的沉积速率和沉积的铜膜的总厚度。

公开(公告)号：US06344129B1

公开(公告)日：2002-02-05

申请号：US09418197

申请日：1999-10-13

申请人： Kenneth P. Rodbell ,  Panayotis C. Andricacos ,  Cyril Cabral, Jr. ,  Lynne M. Gignac ,  Cyprian E. Uzoh ,  Peter S. Locke

发明人： Kenneth P. Rodbell ,  Panayotis C. Andricacos ,  Cyril Cabral, Jr. ,  Lynne M. Gignac ,  Cyprian E. Uzoh ,  Peter S. Locke

IPC分类号： C25D500

CPC分类号： C25D5/10 ,  C25D3/38 ,  C25D5/00 ,  C25D7/123 ,  C25D21/02 ,  H05K3/423

摘要： A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process. These parameters include the bath temperature, the bath agitation, the additive concentration in the plating bath, the plating current density utilized, the deposition rate of the copper film and the total thickness of the copper film deposited.

摘要翻译： 公开了一种在电子基板上镀铜导体的方法和形成的器件。 在该方法中，首先提供填充有保持在约0℃至约18℃之间的温度的电镀溶液的电镀铜浴。 然后将浸在电镀溶液中的电子基板上的铜层以单步骤或双步沉积工艺进行镀覆。 双步沉积方法更适合于在具有大纵横比的特征中沉积铜导体，例如双镶嵌结构中的通孔，其直径/深度的纵横比大于1/3或高达{分数（ 1/10）}。 各种电镀参数用于在单步沉积或双步沉积工艺中提供短电阻瞬变。 这些参数包括浴温度，浴液搅拌，镀浴中的添加剂浓度，所用的电镀电流密度，铜膜的沉积速率和沉积的铜膜的总厚度。

公开(公告)号：US07227265B2

公开(公告)日：2007-06-05

申请号：US10810719

申请日：2004-03-29

申请人： Panayotis C. Andricacos ,  Steven H. Boettcher ,  Dean S. Chung ,  Hariklia Deligianni ,  James E. Fluegel ,  Wilma Jean Horkans ,  Keith T. Kwietniak ,  Peter S. Locke ,  Christopher C. Parks ,  Soon-Cheon Seo ,  Andrew H. Simon ,  Erick G. Walton

发明人： Panayotis C. Andricacos ,  Steven H. Boettcher ,  Dean S. Chung ,  Hariklia Deligianni ,  James E. Fluegel ,  Wilma Jean Horkans ,  Keith T. Kwietniak ,  Peter S. Locke ,  Christopher C. Parks ,  Soon-Cheon Seo ,  Andrew H. Simon ,  Erick G. Walton

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/2885 ,  C25D3/38 ,  C25D5/024 ,  C25D5/18 ,  C25D7/123 ,  H01L21/76877

摘要： Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 μm and via openings filled with electroplated copper than is substantially free of internal seams or voids.

摘要翻译： 使用包含溶解的铜盐的电镀铜浴获得至少基本上不含内部接缝或空隙的铜导体的互连结构，其中盐的浓度为酸的至少约0.4摩尔浓度至高达约0.5摩尔浓度。 还提供了具有大于约3的宽高比和小于约0.275μm的宽度的铜镶嵌结构以及填充有电镀铜的通孔，基本上不含内部接缝或空隙。

公开(公告)号：US06471845B1

公开(公告)日：2002-10-29

申请号：US09461849

申请日：1999-12-15

申请人： John O. Dukovic ,  William E. Corbin, Jr. ,  Erick G. Walton ,  Peter S. Locke ,  Panayotis C. Andricacos ,  James E. Fluegel ,  Evan Patton ,  Jonathan Reid

发明人： John O. Dukovic ,  William E. Corbin, Jr. ,  Erick G. Walton ,  Peter S. Locke ,  Panayotis C. Andricacos ,  James E. Fluegel ,  Evan Patton ,  Jonathan Reid

IPC分类号： C25D2112

CPC分类号： C25D21/12 ,  Y10T137/2509

摘要： A method for controlling the composition of a chemical bath in which predictive dosing is used to account for changes in the composition of the bath in which the operating characteristics of the process are partitioned into a plurality of operating modes and the consumption or generation of materials related to the process are determined empirically and additions of material are made as appropriate.

摘要翻译： 用于控制化学浴的组成的方法，其中使用预测剂量来解释浴的组成的变化，其中过程的操作特性被划分为多种操作模式以及相关材料的消耗或产生 根据经验确定该过程，并酌情添加材料。

公开(公告)号：US06600230B2

公开(公告)日：2003-07-29

申请号：US09899923

申请日：2001-07-09

申请人： Cyprian E. Uzoh ,  Peter S. Locke

发明人： Cyprian E. Uzoh ,  Peter S. Locke

IPC分类号： H01L2348

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877 ,  Y10T428/12 ,  Y10T428/12528 ,  Y10T428/239 ,  Y10T428/24917

摘要： A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80° C. to about 130° C. Metal is plated on the seedlayer.

摘要翻译： 在亚微米结构中电镀金属的方法。 种子层沉积在亚微米结构的表面上。 种子层在约80℃至约130℃的温度下退火。将金属镀在种子层上。

公开(公告)号：US06258717B1

公开(公告)日：2001-07-10

申请号：US09363741

申请日：1999-07-30

申请人： Cyprian E. Uzoh ,  Peter S. Locke

发明人： Cyprian E. Uzoh ,  Peter S. Locke

IPC分类号： H01L2144

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877 ,  Y10T428/12 ,  Y10T428/12528 ,  Y10T428/239 ,  Y10T428/24917

摘要： A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80° C. to about 130° C. Metal is plated on the seedlayer.

公开(公告)号：US06413854B1

公开(公告)日：2002-07-02

申请号：US09382110

申请日：1999-08-24

申请人： Cyprian E. Uzoh ,  Daniel C. Edelstein ,  Cheryl Faltermeier ,  Peter S. Locke

发明人： Cyprian E. Uzoh ,  Daniel C. Edelstein ,  Cheryl Faltermeier ,  Peter S. Locke

IPC分类号： H01L214763

CPC分类号： H01L21/76885 ,  H01L21/76801 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a structure. A first dielectric material is deposited on a substrate. The first dielectric material is patterned. At least one metal is deposited in and on the first dielectric material. Portions of the at least one metal are removed at least in a region above an upper surface of the first dielectric material. The first dielectric material is removed. A second dielectric material is provided in place of first dielectric material.

摘要翻译： 一种形成结构的方法。 第一介电材料沉积在基底上。 第一介电材料被图案化。 至少一种金属沉积在第一介电材料中和之上。 至少一个金属的部分至少在第一介电材料的上表面上方的区域中被去除。 去除第一介电材料。 提供第二电介质材料代替第一电介质材料。

公开(公告)号：US07678258B2

公开(公告)日：2010-03-16

申请号：US10615794

申请日：2003-07-10

申请人： Panayotis Andricacos ,  Dean S. Chung ,  Hariklia Deligianni ,  James E. Fluegel ,  Keith T. Kwietniak ,  Peter S. Locke ,  Darryl D. Restaino ,  Soon-Cheon Seo ,  Philippe M. Vereecken ,  Erick G. Walton

发明人： Panayotis Andricacos ,  Dean S. Chung ,  Hariklia Deligianni ,  James E. Fluegel ,  Keith T. Kwietniak ,  Peter S. Locke ,  Darryl D. Restaino ,  Soon-Cheon Seo ,  Philippe M. Vereecken ,  Erick G. Walton

IPC分类号： C25D5/00

CPC分类号： C23C18/1617 ,  C23C18/1683 ,  C25D21/12 ,  C25D21/18

摘要： An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.

摘要翻译： 公开了一种稳定湿化学浴的改进方法。 通常，这种浴用于处理工件的工艺中，例如用于将金属电镀到基底上的电镀工艺。 特别地，本发明涉及镀铜浴。 更具体地说，本发明涉及镀铜浴的稳定性。 更具体地，本发明涉及通过监测铜电镀浴中有害副产物的积累来防止空隙形成。

公开(公告)号：US06592747B2

公开(公告)日：2003-07-15

申请号：US09881817

申请日：2001-06-18

申请人： Wilma Jean Horkans ,  Keith T. Kwietniak ,  Peter S. Locke

发明人： Wilma Jean Horkans ,  Keith T. Kwietniak ,  Peter S. Locke

IPC分类号： G01N2742

CPC分类号： G01N31/164 ,  G01N27/42

摘要： Organic addition agents in copper plating baths are monitored by diluting a sample of the bath with sulfuric acid and hydrochloric acid and optionally a cupric salt. The diluting provides a bath having conventional concentrations of cupric ion, sulfuric acid and hydrochloric acid; and adjusted concentrations of the organic addition agents of 1/X of their original values in the sample; where X is the dilution factor. CVS techniques are used to determine concentrations of organic addition agents.

摘要翻译： 通过用硫酸和盐酸和任选的铜盐稀释浴的样品来监测铜电镀浴中的有机添加剂。 稀释液提供具有常规浓度的铜离子，硫酸和盐酸的浴液; 并将样品中原始值的1 / X的有机添加剂的浓度调节到其中; 其中X是稀释因子。 CVS技术用于确定有机添加剂的浓度。