摘要:
A new design is provided for the heat spreader of a semiconductor package. Grooves are provided in a surface of the heat spreader, subdividing the heat spreader for purposes of stress distribution into four or more sections. This division of the heat spreader results in a reduction of the mechanical and thermal stress that is introduced by the heat spreader into the device package. Mechanical and heat stress, using conventional heat spreader designs, has a negative, stress induced, effect on the semiconductor die, on the contact points (bump joints) of the semiconductor die and on the solder ball connections of the package.
摘要:
A new method is provided for the interface between a stress relieve interface layer of polyimide and a thereover created layer of mold compound. The invention provides for creating a pattern in the stress relieve layer of polyimide before the layer of mold compound is formed over the stress relieve layer of polyimide.
摘要:
A new method is provided for the interface between a stress relieve interface layer of polyimide and a thereover created layer of mold compound. The invention provides for creating a pattern in the stress relieve layer of polyimide before the layer of mold compound is formed over the stress relieve layer of polyimide.
摘要:
A method of making a microelectronic assembly buying restraining a substrate in a fixture at room temperature, placing a flip chip on the substrate so that conductive bumps on the flip chip are aligned with contact pads on the substrate, heating the flip chip, the substrate and the fixture to reflow the conductive bumps on the flip chip, cooling the flip chip, substrate and fixture to solidify the conductive bumps and to mount the flip chip to the substrate, depositing an underfill between the flip chip and the substrate, curing the underfill by heating the flip chip, substrate, underfill and fixture to an elevated temperature, and removing the flip chip mounted substrate from the fixture.
摘要:
A new method is provided for the interconnection of flip chips to a supporting substrate. The invention starts with a conventional first substrate, that serves as a semiconductor device support structure, over the surface of which a first pattern of contacts points has been provided. The invention then uses a second substrate, for instance a glass or quartz plate, and creates over the surface thereof a second pattern of solder bumps separated by solder non-wettable surfaces. The second pattern is a mirror image of the first pattern. By then overlying the first pattern of contact points with the second pattern of solder bumps, a step of reflow can be applied to the solder bumps, transferring the solder bumps from the second substrate to the contact points provided over the first substrate.
摘要:
The invention includes a method of wafer level chip scale packaging including providing a semiconductor device having a silicon based substrate with discrete devices defined therein and a contact pad near an upper surface thereof, a passivation layer overlying the silicon based substrate and the contact pad, and the passivation layer having an opening therein exposing at least a portion of the contact pad, and a redistribution trace electrically connected to the contact pad near a first end and having a second end of spaced a distance from the contact pad. Forming an encapsulation layer over the semiconductor device including the redistribution trace. Forming an opening in the encapsulation layer down to the redistribution trace. Forming a contact post in the opening in the encapsulation layer, and the contact post having a first end electrically connected to the redistribution trace and a second exposed end. Forming an electrically conductive bump on the semiconductor device and in electrical contact with the contact post.
摘要:
A new method is provided for the interface between a stress relieve interface layer of polyimide and a thereover created layer of mold compound. The invention provides for creating a pattern in the stress relieve layer of polyimide before the layer of mold compound is formed over the stress relieve layer of polyimide.
摘要:
A method including providing a first substrate having a first bond pad and a second bond pad; forming a subassembly comprising securing a second substrate to the first substrate with a ground layer interposed between the first substrate and the second substrate; forming a first trench in the subassembly through the first substrate so that the trench is defined at least in part by a side wall of the first substrate and through at least a portion of the ground layer; and forming a first electrically conductive layer overlying the first bond pad, the side wall of the first substrate and overlying a portion of the ground layer.
摘要:
A method of protecting the active surface, front side, of semiconductor wafers during the operations of backside grinding, transporting, and packaging has been achieved. The invention discloses a method for applying an organic passivation layer or an aqueous material for protection of the active components. These materials are easily removed prior to final packaging of the dies.