公开(公告)号：US20120097330A1

公开(公告)日：2012-04-26

申请号：US12908617

申请日：2010-10-20

申请人： Prahallad Iyengar ,  Sanjeev Baluja ,  Dale R. DuBois ,  Juan Carlos Rocha-Alverez ,  Thomas Nowak ,  Scott A. Hendrickson ,  Yong-Won Lee ,  Mei-Yee Shek ,  Li-Qun Xia ,  Derek R. Witty

发明人： Prahallad Iyengar ,  Sanjeev Baluja ,  Dale R. DuBois ,  Juan Carlos Rocha-Alverez ,  Thomas Nowak ,  Scott A. Hendrickson ,  Yong-Won Lee ,  Mei-Yee Shek ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/465 ,  H01L21/46

CPC分类号： H01L21/02164 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/463 ,  C23C16/5096 ,  H01L21/02274

摘要： A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.

摘要翻译： 衬底处理系统包括与处理室相邻的热处理器或等离子体发生器。 第一处理气体进入热处理器或等离子体发生器。 然后，第一处理气体直接通过喷头流入处理室。 第二处理气体流过穿过喷头的第二流路。 第一和第二处理气体混合在喷淋头下面，并且一层材料沉积在喷头下方的基底上。

公开(公告)号：US20090107626A1

公开(公告)日：2009-04-30

申请号：US12258300

申请日：2008-10-24

申请人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee(Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

发明人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee(Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

IPC分类号： B32B37/00

CPC分类号： H01L21/76832 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.

摘要翻译： 本文所述的实施例提供了一种处理衬底的方法。 该方法包括在导电材料和电介质材料之间沉积界面粘合层，使得界面粘合层在导电材料和电介质材料之间提供增加的粘合力。 在一个实施例中，提供了一种用于处理衬底的方法。 该方法包括在包括导电材料的基底上沉积界面粘附层，将界面粘附层暴露于含氮等离子体，以及在将界面粘附层暴露于含氮等离子体之后，在界面粘附层上沉积电介质层。

公开(公告)号：US20120276301A1

公开(公告)日：2012-11-01

申请号：US13545738

申请日：2012-07-10

申请人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee (Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

发明人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee (Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

IPC分类号： B05D5/12 ,  B05D3/06

CPC分类号： H01L21/76832 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.

摘要翻译： 本文所述的实施例提供了一种处理衬底的方法。 该方法包括在导电材料和电介质材料之间沉积界面粘合层，使得界面粘合层在导电材料和电介质材料之间提供增加的粘合力。 在一个实施例中，提供了一种用于处理衬底的方法。 该方法包括在包括导电材料的基底上沉积界面粘附层，将界面粘附层暴露于含氮等离子体，以及在将界面粘附层暴露于含氮等离子体之后，在界面粘附层上沉积电介质层。

公开(公告)号：US08758638B2

公开(公告)日：2014-06-24

申请号：US13104314

申请日：2011-05-10

申请人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

摘要翻译： 提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。 可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。 在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。

公开(公告)号：US20120289049A1

公开(公告)日：2012-11-15

申请号：US13104314

申请日：2011-05-10

申请人： WEIFENG YE ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： WEIFENG YE ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

摘要翻译： 提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。 可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。 在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。

公开(公告)号：US08138104B2

公开(公告)日：2012-03-20

申请号：US11762590

申请日：2007-06-13

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/469

CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US20120196450A1

公开(公告)日：2012-08-02

申请号：US13365226

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/3105 ,  H01L21/318 ,  H01L21/316

CPC分类号： H01L21/0234 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据一些实施例，沉积的氮化硅膜暴露于等离子体和紫外（UV）辐射的固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化循环的整合方法形成氮化硅膜，以在底层凸起特征的尖角处保留膜的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US20090269923A1

公开(公告)日：2009-10-29

申请号：US12109533

申请日：2008-04-25

申请人： Sang M. Lee ,  Yong-Won Lee ,  Meiyee Shek ,  Li-Qun Xia ,  Derek R. Witty

发明人： Sang M. Lee ,  Yong-Won Lee ,  Meiyee Shek ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/321

CPC分类号： H01L21/02074 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886

摘要： A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.

摘要翻译： 提供了一种用于处理衬底的方法和设备。 处理衬底的方法包括提供包括导电材料的衬底，对导电材料执行预处理工艺，在导电材料上流动硅基化合物以形成硅化物层，对硅化物层进行后处理工艺 ，并在衬底上沉积阻挡介电层。

公开(公告)号：US08679987B2

公开(公告)日：2014-03-25

申请号：US13468776

申请日：2012-05-10

申请人： Patrick Reilly ,  Shahid Shaikh ,  Tersem Summan ,  Deenesh Padhi ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Bok Hoen Kim ,  Derek R. Witty

发明人： Patrick Reilly ,  Shahid Shaikh ,  Tersem Summan ,  Deenesh Padhi ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Bok Hoen Kim ,  Derek R. Witty

IPC分类号： H01L21/47 ,  H01L21/312

CPC分类号： H01L21/02527 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/31144

摘要： Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.

摘要翻译： 本文所述的实施例涉及一种用于处理衬底的方法。 在一个实施方案中，该方法包括将包含烃源和稀释气体的气体混合物引入位于处理系统内的沉积室中，在沉积室中从约200℃至约200℃的温度和 约700℃以在基底上形成低氢含量的无定形碳层，将基底转移到位于处理系统内的固化室中，而不破坏真空，并在固化温度下将基底暴露于固化室内的UV辐射 高于约200℃

公开(公告)号：US08501568B2

公开(公告)日：2013-08-06

申请号：US12256173

申请日：2008-10-22

申请人： Mihaela Balseanu ,  Vladimir Zubkov ,  Li-Qun Xia ,  Atif Noori ,  Reza Arghavani ,  Derek R. Witty ,  Amir Al-Bayati

发明人： Mihaela Balseanu ,  Vladimir Zubkov ,  Li-Qun Xia ,  Atif Noori ,  Reza Arghavani ,  Derek R. Witty ,  Amir Al-Bayati

IPC分类号： H01L21/326 ,  H01L21/8238 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/00 ,  H01L29/792

CPC分类号： H01L21/3185 ,  H01L21/28282 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/31155 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792

摘要： A methods of forming a flash memory device are provided. The flash memory device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is formed on the silicon dioxide layer. The properties of the silicon nitride layer can be modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A dielectric material is deposited on the silicon nitride layer and a conductive date is formed over the dielectric material. The flash memory device with modified silicon nitride layer provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.

摘要翻译： 提供了形成闪速存储器件的方法。 闪存器件包括在衬底上的二氧化硅层和形成在二氧化硅层上的氮化硅层。 氮化硅层的性质可以通过以下任何方式改变：将氮化硅层暴露于紫外线辐射，将氮化硅层暴露于电子束，以及通过等离子体处理氮化硅层。 介电材料沉积在氮化硅层上，并且在电介质材料上形成导电日期。 具有改进的氮化硅层的闪速存储器件提供了非易失性存储器件的单元电池的电荷保持容量和电荷保持时间的增加。